Kazuhiro Mizutani

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Apparatus and method for source side implantation after spacer form...
- Patent number 8,896,048
- Issue date Nov 25, 2014
- Spansion LLC
- Richard Fastow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array type CAM cell for simplifying processes
- Patent number 8,237,210
- Issue date Aug 7, 2012
- Spansion LLC
- Zhigang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming a flash memory device with straight word lines
- Patent number 7,851,306
- Issue date Dec 14, 2010
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device having increased over-erase correction efficien...
- Patent number 7,599,228
- Issue date Oct 6, 2009
- Spansion LLC
- Qiang Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for forming straight word lines in a flash memory...
- Patent number 7,488,657
- Issue date Feb 10, 2009
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for low Vss resistance and reduced DIBL in a f...
- Patent number 7,301,193
- Issue date Nov 27, 2007
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with plasma-grown oxide spacer for reduced DIBL and Vss...
- Patent number 7,151,028
- Issue date Dec 19, 2006
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for eliminating word line bending by source si...
- Patent number 7,029,975
- Issue date Apr 18, 2006
- Advanced Mirco Devices, Inc.
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array with memory cells having reduced short channel effects
- Patent number 6,963,106
- Issue date Nov 8, 2005
- Spansion LLC
- Richard Fastow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing short channel effects in memory cells and relat...
- Patent number 6,773,990
- Issue date Aug 10, 2004
- Advanced Micro Devices, Inc.
- Richard Fastow
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FLASH MEMORY DEVICE WITH STRAIGHT WORD LINES
- Publication number 20090090953
- Publication date Apr 9, 2009
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for forming straight word lines in a flash memory...
- Publication number 20060286750
- Publication date Dec 21, 2006
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method for low Vss resistance and reduced dibl in a f...
- Publication number 20050164450
- Publication date Jul 28, 2005
- FASL, LLC, a limited liability company
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS

Kazuhiro Mizutani

Person

Patents Grantslast 30 patents

Apparatus and method for source side implantation after spacer form...

Array type CAM cell for simplifying processes

Method for forming a flash memory device with straight word lines

Flash memory device having increased over-erase correction efficien...

Method and system for forming straight word lines in a flash memory...

Structure and method for low Vss resistance and reduced DIBL in a f...

Memory cell with plasma-grown oxide spacer for reduced DIBL and Vss...

Method and apparatus for eliminating word line bending by source si...

Memory array with memory cells having reduced short channel effects

Method for reducing short channel effects in memory cells and relat...

Patents Applicationslast 30 patents

FLASH MEMORY DEVICE WITH STRAIGHT WORD LINES

Method and system for forming straight word lines in a flash memory...

Structure and method for low Vss resistance and reduced dibl in a f...