Kazuhito Kamei

Person

Chiyoda-ku, JP

People

Patents Grantslast 30 patents

Information Patent Grant
SiC single crystal and method for producing same
- Patent number 10,450,671
- Issue date Oct 22, 2019
- Toyota Jidosha Kabushiki Kaisha
- Hironori Daikoku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing SiC single crystal
- Patent number 10,145,025
- Issue date Dec 4, 2018
- Toyota Jidosha Kabushiki Kaisha
- Kazuaki Seki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC single crystal
- Patent number 10,119,199
- Issue date Nov 6, 2018
- Toyota Jidosha Kabushiki Kaisha
- Kazuaki Seki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing SiC single crystal and method for producing...
- Patent number 10,100,432
- Issue date Oct 16, 2018
- Toyota Jidosha Kabushiki Kaisha
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon carbide single-crystal ingot and silic...
- Patent number 10,066,316
- Issue date Sep 4, 2018
- Showa Denko K.K.
- Komomo Tani
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC single crystal
- Patent number 9,982,365
- Issue date May 29, 2018
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method of SiC single crystal
- Patent number 9,920,449
- Issue date Mar 20, 2018
- Toyota Jidosha Kabushiki Kaisha
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing SiC single crystals and method of producing...
- Patent number 9,896,778
- Issue date Feb 20, 2018
- Toyota Jidosha Kabushiki Kaisha
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC single crystal
- Patent number 9,822,468
- Issue date Nov 21, 2017
- Toyota Jidosha Kabushiki Kaisha
- Hironori Daikoku
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing SiC single crystal by solution growth metho...
- Patent number 9,783,911
- Issue date Oct 10, 2017
- Toyota Jidosha Kabushiki Kaisha
- Nobuyoshi Yashiro
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production apparatus and production method of SiC single crystal
- Patent number 9,732,441
- Issue date Aug 15, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production apparatus of SiC single crystal by solution growth metho...
- Patent number 9,702,056
- Issue date Jul 11, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC single crystals by control of an angle for...
- Patent number 9,631,295
- Issue date Apr 25, 2017
- Toyota Jidosha Kabushiki Kaisha
- Hironori Daikoku
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing apparatus of SiC single crystal and method for manufa...
- Patent number 9,617,655
- Issue date Apr 11, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC single crystal
- Patent number 9,530,642
- Issue date Dec 27, 2016
- Toyota Jidosha Kabushiki Kaisha
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing N-type SiC single crystal by solution grow...
- Patent number 9,512,540
- Issue date Dec 6, 2016
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing apparatus of SiC single crystal, jig for use in the m...
- Patent number 9,388,508
- Issue date Jul 12, 2016
- Toyota Jidosha Kabushiki Kaisha
- Kazuhito Kamei
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus and method for production of SiC single crystal
- Patent number 9,322,112
- Issue date Apr 26, 2016
- Toyota Jidosha Kabushiki Kaisha
- Tomokazu Ishii
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
SiC single crystal wafer and process for production thereof
- Patent number 9,222,198
- Issue date Dec 29, 2015
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhiko Kusunoki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and apparatus for manufacturing a SiC single crystal film
- Patent number 8,492,774
- Issue date Jul 23, 2013
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhiko Kusunoki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing a silicon carbide single crystal
- Patent number 8,388,752
- Issue date Mar 5, 2013
- Sumitomo Metal Industries, Ltd.
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Grant
Graphite powders suited for negative electrode material of lithium...
- Patent number 7,659,033
- Issue date Feb 9, 2010
- Sony Corporation
- Koji Moriguchi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method for preparing silicon carbide single crystal
- Patent number 7,635,413
- Issue date Dec 22, 2009
- Sumitomo Metal Industries, Ltd.
- Kazuhiko Kusunoki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon carbide single crystal and a method for its production
- Patent number 7,520,930
- Issue date Apr 21, 2009
- Sumitomo Metal Industries, Ltd.
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Graphite powders suited for negative electrode material of lithium...
- Patent number 7,214,447
- Issue date May 8, 2007
- Sony Corporation
- Koji Moriguchi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Graphite powders suited for negative electrode material of lithium...
- Patent number 6,764,767
- Issue date Jul 20, 2004
- Sony Corporation
- Koji Moriguchi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Graphite powder suitable for negative electrode material of lithium...
- Patent number 6,576,369
- Issue date Jun 10, 2003
- Sumitomo Metal Industries, Ltd.
- Koji Moriguchi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20190229103
- Publication date Jul 25, 2019
- Waseda University
- Kohei TATSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20180112328
- Publication date Apr 26, 2018
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuaki SEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20180112329
- Publication date Apr 26, 2018
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuaki SEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SILICON CARBIDE SINGLE-CRYSTAL INGOT AND SILIC...
- Publication number 20180066380
- Publication date Mar 8, 2018
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Komomo TANI
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH PROCE...
- Publication number 20170306522
- Publication date Oct 26, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhito KAMEI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL AND APPARATUS FOR PRODUCING...
- Publication number 20170298533
- Publication date Oct 19, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhiko KUSUNOKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING P-TYPE SiC SINGLE CRYSTAL
- Publication number 20170283982
- Publication date Oct 5, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhiko KUSUNOKI
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL AND METHOD OF MANUFA...
- Publication number 20170226658
- Publication date Aug 10, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Yutaka KISHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SiC SINGLE CRYSTAL
- Publication number 20170067183
- Publication date Mar 9, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuaki SEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD OF SiC SINGLE CRYSTAL
- Publication number 20170009373
- Publication date Jan 12, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhiko KUSUNOKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
- Publication number 20160340794
- Publication date Nov 24, 2016
- Toyota Jidosha Kabushiki Kaisha
- Hironori DAIKOKU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20160273126
- Publication date Sep 22, 2016
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20160237590
- Publication date Aug 18, 2016
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Hironori DAIKOKU
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING SiC SINGLE CRYSTALS AND METHOD OF PRODUCING...
- Publication number 20160122900
- Publication date May 5, 2016
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhito KAMEI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20160053402
- Publication date Feb 25, 2016
- Kazuhiko KUSUNOKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL PRODUCTION APPARATUS, CRUCIBLE FOR USE THEREIN, AND...
- Publication number 20150225872
- Publication date Aug 13, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD OF PRODUCING SiC...
- Publication number 20150225871
- Publication date Aug 13, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
- Publication number 20150221511
- Publication date Aug 6, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING SIC SINGLE CRYSTAL BY SOLUTION GROWTH METHO...
- Publication number 20150191848
- Publication date Jul 9, 2015
- Toyota Jidosha Kabushiki Kaisha
- Nobuyoshi Yashiro
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING...
- Publication number 20150152569
- Publication date Jun 4, 2015
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20150136016
- Publication date May 21, 2015
- Toyota Jidosha Kabushiki Kaisha
- Katsunori DANNO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20150075419
- Publication date Mar 19, 2015
- Toyota Jidosha Kabushiki Kaisha
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION APPARATUS AND PRODUCTION METHOD OF SiC SINGLE CRYSTAL
- Publication number 20140116324
- Publication date May 1, 2014
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION APPARATUS OF SiC SINGLE CRYSTAL BY SOLUTION GROWTH METHO...
- Publication number 20140116325
- Publication date May 1, 2014
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTALS AND PRODUCTION DEVICE
- Publication number 20140007807
- Publication date Jan 9, 2014
- Hironori Daikoku
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL, JIG FOR USE IN THE M...
- Publication number 20130305981
- Publication date Nov 21, 2013
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL AND METHOD FOR MANUFA...
- Publication number 20130284083
- Publication date Oct 31, 2013
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING N-TYPE SiC SINGLE CRYSTAL
- Publication number 20130220212
- Publication date Aug 29, 2013
- Toyota Jidosha Kabushiki Kaisha
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Application
Sic single crystal wafer and process for production thereof
- Publication number 20120211769
- Publication date Aug 23, 2012
- Sumitomo Metal Industries, Ltd.
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR PRODUCTION OF SiC SINGLE CRYSTAL
- Publication number 20120160153
- Publication date Jun 28, 2012
- Tomokazu ISHII
- C30 - CRYSTAL GROWTH

Kazuhito Kamei

Person

Patents Grantslast 30 patents

SiC single crystal and method for producing same

Method for producing SiC single crystal

Method for producing SiC single crystal

Apparatus for producing SiC single crystal and method for producing...

Method for producing silicon carbide single-crystal ingot and silic...

Method for producing SiC single crystal

Production method of SiC single crystal

Apparatus for producing SiC single crystals and method of producing...

Method for producing SiC single crystal

Apparatus for producing SiC single crystal by solution growth metho...

Production apparatus and production method of SiC single crystal

Production apparatus of SiC single crystal by solution growth metho...

Method for producing SiC single crystals by control of an angle for...

Manufacturing apparatus of SiC single crystal and method for manufa...

Method for producing SiC single crystal

Method for manufacturing N-type SiC single crystal by solution grow...

Manufacturing apparatus of SiC single crystal, jig for use in the m...

Apparatus and method for production of SiC single crystal

SiC single crystal wafer and process for production thereof

Method and apparatus for manufacturing a SiC single crystal film

Method of manufacturing a silicon carbide single crystal

Graphite powders suited for negative electrode material of lithium...

Method for preparing silicon carbide single crystal

Silicon carbide single crystal and a method for its production

Graphite powders suited for negative electrode material of lithium...

Graphite powders suited for negative electrode material of lithium...

Graphite powder suitable for negative electrode material of lithium...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

METHOD FOR PRODUCING SILICON CARBIDE SINGLE-CRYSTAL INGOT AND SILIC...

APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH PROCE...

METHOD FOR PRODUCING SiC SINGLE CRYSTAL AND APPARATUS FOR PRODUCING...

METHOD FOR PRODUCING P-TYPE SiC SINGLE CRYSTAL

APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL AND METHOD OF MANUFA...

METHOD OF MANUFACTURING SiC SINGLE CRYSTAL

PRODUCTION METHOD OF SiC SINGLE CRYSTAL

METHOD FOR PRODUCING SIC SINGLE CRYSTAL

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

APPARATUS FOR PRODUCING SiC SINGLE CRYSTALS AND METHOD OF PRODUCING...

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

SINGLE CRYSTAL PRODUCTION APPARATUS, CRUCIBLE FOR USE THEREIN, AND...

SiC SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD OF PRODUCING SiC...

METHOD FOR PRODUCING SIC SINGLE CRYSTAL

APPARATUS FOR PRODUCING SIC SINGLE CRYSTAL BY SOLUTION GROWTH METHO...

APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING...

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

PRODUCTION APPARATUS AND PRODUCTION METHOD OF SiC SINGLE CRYSTAL

PRODUCTION APPARATUS OF SiC SINGLE CRYSTAL BY SOLUTION GROWTH METHO...

METHOD FOR PRODUCING SIC SINGLE CRYSTALS AND PRODUCTION DEVICE

MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL, JIG FOR USE IN THE M...

MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL AND METHOD FOR MANUFA...

METHOD FOR MANUFACTURING N-TYPE SiC SINGLE CRYSTAL

Sic single crystal wafer and process for production thereof

APPARATUS AND METHOD FOR PRODUCTION OF SiC SINGLE CRYSTAL