Kazuki Ota

Person

Kawasaki-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor, and multilayered epitaxial film for use in...
- Patent number 9,954,087
- Issue date Apr 24, 2018
- Renesas Electronics Corporation
- Takashi Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,780,738
- Issue date Oct 3, 2017
- RENESAS ELECTRONICS CORPORATION
- Kazuki Ota
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device
- Patent number 9,768,257
- Issue date Sep 19, 2017
- Renesas Electronics Corporation
- Kazuki Ota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and field effect transistor with controllable...
- Patent number 9,530,879
- Issue date Dec 27, 2016
- Renesas Electronics Corporation
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and field effect transistor with controllable...
- Patent number 9,231,096
- Issue date Jan 5, 2016
- Renesas Electronics Corporation
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and field effect transistor
- Patent number 8,981,434
- Issue date Mar 17, 2015
- Renesas Electronics Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor containing a group III nitride semiconducto...
- Patent number 8,928,038
- Issue date Jan 6, 2015
- Renesas Electronics Corporation
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor, method for producing the same, and electro...
- Patent number 8,921,894
- Issue date Dec 30, 2014
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,907,349
- Issue date Dec 9, 2014
- Renesas Electronics Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor, and multilayered epitaxial film for use in...
- Patent number 8,853,666
- Issue date Oct 7, 2014
- Renesas Electronics Corporation
- Takashi Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, schottky barrier diode, electronic apparatus,...
- Patent number 8,772,785
- Issue date Jul 8, 2014
- Renesas Electronics Corporation
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor
- Patent number 8,716,835
- Issue date May 6, 2014
- Renesas Electronics Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and process for manufacturing same
- Patent number 8,680,580
- Issue date Mar 25, 2014
- Renesas Electronics Corporation
- Kazuki Ota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction field effect transistor, method for producing hetero...
- Patent number 8,674,409
- Issue date Mar 18, 2014
- Renesas Electronics Corporation
- Takashi Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using a group III nitride-based semiconductor
- Patent number 8,674,407
- Issue date Mar 18, 2014
- Renesas Electronics Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, field-effect transistor, and electronic device
- Patent number 8,659,055
- Issue date Feb 25, 2014
- Renesas Electronics Corporation
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 8,618,578
- Issue date Dec 31, 2013
- Renesas Electronics Corporation
- Kazuki Ota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus having reverse blocking characteristics and...
- Patent number 8,552,471
- Issue date Oct 8, 2013
- NEC Corporation
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with reduced gate leakage current
- Patent number 8,466,495
- Issue date Jun 18, 2013
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 8,426,895
- Issue date Apr 23, 2013
- NEC Corporation
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group nitride bipolar transistor
- Patent number 8,395,237
- Issue date Mar 12, 2013
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of manufacturing the same
- Patent number 8,378,387
- Issue date Feb 19, 2013
- NEC Corporation
- Kazuki Ota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,344,422
- Issue date Jan 1, 2013
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with reduced gate leakage current
- Patent number 8,198,652
- Issue date Jun 12, 2012
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 7,863,648
- Issue date Jan 4, 2011
- NEC Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 7,800,131
- Issue date Sep 21, 2010
- NEC Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor field effect transistor
- Patent number 6,534,790
- Issue date Mar 18, 2003
- NEC Corporation
- Takehiko Kato
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR AND MULTILAYERED EPITAXIAL FILM FOR USE IN...
- Publication number 20180233590
- Publication date Aug 16, 2018
- RENESAS ELECTRONICS CORPORATION
- Takashi Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160079409
- Publication date Mar 17, 2016
- RENESAS ELECTRONICS CORPORATION
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20150076511
- Publication date Mar 19, 2015
- RENESAS ELECTRONICS CORPORATION
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN...
- Publication number 20140367743
- Publication date Dec 18, 2014
- Takashi Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140209922
- Publication date Jul 31, 2014
- RENESAS ELECTRONICS CORPORATION
- Kazuki OTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140203877
- Publication date Jul 24, 2014
- Renesas Electronics Corporation
- Kazuki Ota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140084300
- Publication date Mar 27, 2014
- RENESAS ELECTRONICS CORPORATION
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130292690
- Publication date Nov 7, 2013
- RENESAS ELECTRONICS CORPORATION
- Yuji ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR
- Publication number 20130113028
- Publication date May 9, 2013
- NEC Corporation
- Hironobu MIYAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING THE SAME, AND ELECTRO...
- Publication number 20130105811
- Publication date May 2, 2013
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING THE SAME, AND ELECTRO...
- Publication number 20130099245
- Publication date Apr 25, 2013
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, AND ELECTRONIC DEVICE
- Publication number 20120228674
- Publication date Sep 13, 2012
- NEC Corporation
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH REDUCED GATE LEAKAGE CURRENT
- Publication number 20120217547
- Publication date Aug 30, 2012
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR
- Publication number 20120199889
- Publication date Aug 9, 2012
- NEC Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SCHOTTKY BARRIER DIODE, ELECTRONIC APPARATUS,...
- Publication number 20110297954
- Publication date Dec 8, 2011
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20110291160
- Publication date Dec 1, 2011
- Kazuki Ota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING HETERO...
- Publication number 20110284865
- Publication date Nov 24, 2011
- NEC Corporation
- Takashi Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR
- Publication number 20110278586
- Publication date Nov 17, 2011
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME
- Publication number 20110260217
- Publication date Oct 27, 2011
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR
- Publication number 20110241075
- Publication date Oct 6, 2011
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20110006346
- Publication date Jan 13, 2011
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20110006345
- Publication date Jan 13, 2011
- NEC Corporation
- Kazuki Ota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20100327318
- Publication date Dec 30, 2010
- NEC Corporation
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20100276732
- Publication date Nov 4, 2010
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND PROCESS FOR MANUFACTURING SAME
- Publication number 20100270559
- Publication date Oct 28, 2010
- NEC Corporation
- Kazuki Ota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20100224910
- Publication date Sep 9, 2010
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor
- Publication number 20100155779
- Publication date Jun 24, 2010
- Yasuhiro Murase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20090267114
- Publication date Oct 29, 2009
- NEC Corporation
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor
- Publication number 20090230429
- Publication date Sep 17, 2009
- NEC Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor
- Publication number 20090230430
- Publication date Sep 17, 2009
- NEC CORPRORATION
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Field effect transistor, and multilayered epitaxial film for use in...

Semiconductor device

Semiconductor device

Semiconductor device and field effect transistor with controllable...

Semiconductor device and field effect transistor with controllable...

Semiconductor device and field effect transistor

Field effect transistor containing a group III nitride semiconducto...

Field effect transistor, method for producing the same, and electro...

Semiconductor device and method of manufacturing the same

Field effect transistor, and multilayered epitaxial film for use in...

Semiconductor device, schottky barrier diode, electronic apparatus,...

Bipolar transistor

Field effect transistor and process for manufacturing same

Heterojunction field effect transistor, method for producing hetero...

Semiconductor device using a group III nitride-based semiconductor

Semiconductor device, field-effect transistor, and electronic device

Field effect transistor

Semiconductor apparatus having reverse blocking characteristics and...

Field effect transistor with reduced gate leakage current

Semiconductor device and manufacturing method of the same

Group nitride bipolar transistor

Field effect transistor and method of manufacturing the same

Semiconductor device

Field effect transistor with reduced gate leakage current

Field effect transistor

Field effect transistor

Compound semiconductor field effect transistor

Patents Applicationslast 30 patents

FIELD EFFECT TRANSISTOR AND MULTILAYERED EPITAXIAL FILM FOR USE IN...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR

FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING THE SAME, AND ELECTRO...

FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING THE SAME, AND ELECTRO...

SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, AND ELECTRONIC DEVICE

FIELD EFFECT TRANSISTOR WITH REDUCED GATE LEAKAGE CURRENT

SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE, SCHOTTKY BARRIER DIODE, ELECTRONIC APPARATUS,...

FIELD EFFECT TRANSISTOR

HETEROJUNCTION FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING HETERO...

BIPOLAR TRANSISTOR

SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME

BIPOLAR TRANSISTOR

SEMICONDUCTOR DEVICE

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE

FIELD EFFECT TRANSISTOR AND PROCESS FOR MANUFACTURING SAME

FIELD EFFECT TRANSISTOR

Field Effect Transistor

FIELD EFFECT TRANSISTOR

Field effect transistor

Field effect transistor