Kazukuni Hara

Person

Kasugai, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor chip and method for manufacturing the same
- Patent number 11,810,821
- Issue date Nov 7, 2023
- Denso Corporation
- Masatake Nagaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride semiconductor device and method for manufacturing t...
- Patent number 11,810,783
- Issue date Nov 7, 2023
- Denso Corporation
- Chiaki Sasaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing gallium nitride semiconductor device
- Patent number 11,784,039
- Issue date Oct 10, 2023
- Denso Corporation
- Jun Kojima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer and method for producing same
- Patent number 11,107,892
- Issue date Aug 31, 2021
- Showa Denko K.K.
- Keisuke Fukada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film forming apparatus
- Patent number 10,896,831
- Issue date Jan 19, 2021
- NuFlare Technology, Inc.
- Kunihiko Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film forming apparatus
- Patent number 10,745,824
- Issue date Aug 18, 2020
- NuFlare Technology, Inc.
- Kunihiko Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing SiC epitaxial wafer by simultaneously util...
- Patent number 10,262,863
- Issue date Apr 16, 2019
- Showa Denko K.K.
- Keisuke Fukada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide single crystal manufacturing apparatus
- Patent number 9,644,286
- Issue date May 9, 2017
- Denso Corporation
- Kazukuni Hara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for manufacturing a silicon carbide single crystal compri...
- Patent number 9,328,431
- Issue date May 3, 2016
- Denso Corporation
- Kazukuni Hara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for manufacturing silicon carbide single crystal
- Patent number 8,882,911
- Issue date Nov 11, 2014
- Denso Corporation
- Yuuichirou Tokuda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Equipment and method for manufacturing silicon carbide single crystal
- Patent number 7,217,323
- Issue date May 15, 2007
- Denso Corporation
- Naohiro Sugiyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing method of silicon carbide single crystals
- Patent number 7,147,714
- Issue date Dec 12, 2006
- Denso Corporation
- Masami Naito
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Manufacturing method for producing silicon carbide crystal using so...
- Patent number 7,112,242
- Issue date Sep 26, 2006
- Denso Corporation
- Kazukuni Hara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Manufacturing method for producing silicon carbide crystal using so...
- Patent number 6,830,618
- Issue date Dec 14, 2004
- Denso Corporation
- Kazukuni Hara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Manufacturing method for producing silicon carbide crystal using so...
- Patent number 6,770,137
- Issue date Aug 3, 2004
- Denso Corporation
- Kazukuni Hara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Manufacturing method of silicon carbide single crystals
- Patent number 6,746,787
- Issue date Jun 8, 2004
- Denso Corporation
- Masami Naito
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and apparatus for producing silicon carbide crystal
- Patent number 6,670,282
- Issue date Dec 30, 2003
- Denso Corporation
- Haruyoshi Kuriyama
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and apparatus for fabricating high quality single crystal
- Patent number 6,451,112
- Issue date Sep 17, 2002
- Denso Corporation
- Kazukuni Hara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon carbide single crystal and silicon...
- Patent number 6,214,108
- Issue date Apr 10, 2001
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Atsuto Okamoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method thereof
- Patent number 6,057,558
- Issue date May 2, 2000
- Denson Corporation
- Tsuyoshi Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,054,752
- Issue date Apr 25, 2000
- Denso Corporation
- Kazukuni Hara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device with trench
- Patent number 6,020,600
- Issue date Feb 1, 2000
- Nippondenso Co., Ltd.
- Takeshi Miyajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 5,976,936
- Issue date Nov 2, 1999
- Denso Corporation
- Takeshi Miyajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a semiconductor device having a single therma...
- Patent number 5,915,180
- Issue date Jun 22, 1999
- Denso Corporation
- Kazukuni Hara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing SiC semiconductor device having double oxid...
- Patent number 5,723,376
- Issue date Mar 3, 1998
- Nippondenso Co., Ltd.
- Yuuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20210327710
- Publication date Oct 21, 2021
- DENSO CORPORATION
- Chiaki SASAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CHIP AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210327757
- Publication date Oct 21, 2021
- DENSO CORPORATION
- Masatake Nagaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20210327702
- Publication date Oct 21, 2021
- DENSO CORPORATION
- Jun KOJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME
- Publication number 20200083330
- Publication date Mar 12, 2020
- SHOWA DENKO K.K.
- Keisuke FUKADA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME
- Publication number 20190376206
- Publication date Dec 12, 2019
- SHOWA DENKO K.K.
- Keisuke FUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM FORMING APPARTUS
- Publication number 20180374721
- Publication date Dec 27, 2018
- NuFlare Technology, Inc.
- Kunihiko Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FILM FORMING APPARATUS
- Publication number 20180135203
- Publication date May 17, 2018
- NuFlare Technology, Inc.
- Kunihiko SUZUKI
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM FORMING APPARATUS
- Publication number 20180135175
- Publication date May 17, 2018
- NuFlare Technology, Inc.
- Kunihiko SUZUKI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER AND SIC EPITAXIAL GROW...
- Publication number 20170345658
- Publication date Nov 30, 2017
- SHOWA DENKO K.K.
- Keisuke FUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL MANUFACTURING APPARATUS
- Publication number 20140123901
- Publication date May 8, 2014
- Denso Corporation
- Kazukuni Hara
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20120152166
- Publication date Jun 21, 2012
- DENSO CORPORATION
- Yuuichirou TOKUDA
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20120152165
- Publication date Jun 21, 2012
- DENSO CORPORATION
- Kazukuni HARA
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SILICON CARBIDE...
- Publication number 20110155051
- Publication date Jun 30, 2011
- DENSO CORPORATION
- Kazukuni Hara
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for producing silicon carbide single crystal
- Publication number 20090223447
- Publication date Sep 10, 2009
- DENSO CORPORATION
- Kazukuni Hara
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing method for producing silicon carbide crystal using so...
- Publication number 20040231583
- Publication date Nov 25, 2004
- Kazukuni Hara
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing method of silicon carbide single crystals
- Publication number 20040194693
- Publication date Oct 7, 2004
- Masami Naito
- C30 - CRYSTAL GROWTH
Information Patent Application
Equipment and method for manufacturing silicon carbide single crystal
- Publication number 20040194694
- Publication date Oct 7, 2004
- DENSO Corporation
- Naohiro Sugiyama
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and apparatus for producing silicon carbide crystal
- Publication number 20030054660
- Publication date Mar 20, 2003
- Haruyoshi Kuriyama
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing method of silicon carbide single crystals
- Publication number 20020069818
- Publication date Jun 13, 2002
- Masami Naito
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing method for producing silicon carbide crystal using so...
- Publication number 20020056411
- Publication date May 16, 2002
- Kazukuni Hara
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing method for producing silicon carbide crystal using so...
- Publication number 20020056412
- Publication date May 16, 2002
- Kazukuni Hara
- C30 - CRYSTAL GROWTH

Kazukuni Hara

Person

Patents Grantslast 30 patents

Semiconductor chip and method for manufacturing the same

Gallium nitride semiconductor device and method for manufacturing t...

Method for manufacturing gallium nitride semiconductor device

SiC epitaxial wafer and method for producing same

Film forming apparatus

Film forming apparatus

Method for manufacturing SiC epitaxial wafer by simultaneously util...

Silicon carbide single crystal manufacturing apparatus

Apparatus for manufacturing a silicon carbide single crystal compri...

Apparatus for manufacturing silicon carbide single crystal

Equipment and method for manufacturing silicon carbide single crystal

Manufacturing method of silicon carbide single crystals

Manufacturing method for producing silicon carbide crystal using so...

Manufacturing method for producing silicon carbide crystal using so...

Manufacturing method for producing silicon carbide crystal using so...

Manufacturing method of silicon carbide single crystals

Method and apparatus for producing silicon carbide crystal

Method and apparatus for fabricating high quality single crystal

Method of manufacturing silicon carbide single crystal and silicon...

Silicon carbide semiconductor device and manufacturing method thereof

Semiconductor device

Silicon carbide semiconductor device with trench

Silicon carbide semiconductor device

Process for producing a semiconductor device having a single therma...

Method of manufacturing SiC semiconductor device having double oxid...

Patents Applicationslast 30 patents

GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

SEMICONDUCTOR CHIP AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR DEVICE

SIC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME

SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME

FILM FORMING APPARTUS

FILM FORMING APPARATUS

FILM FORMING APPARATUS

METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER AND SIC EPITAXIAL GROW...

SILICON CARBIDE SINGLE CRYSTAL MANUFACTURING APPARATUS

APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

APPARATUS AND METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SILICON CARBIDE...

Apparatus for producing silicon carbide single crystal

Manufacturing method for producing silicon carbide crystal using so...

Manufacturing method of silicon carbide single crystals

Equipment and method for manufacturing silicon carbide single crystal

Method and apparatus for producing silicon carbide crystal

Manufacturing method of silicon carbide single crystals

Manufacturing method for producing silicon carbide crystal using so...

Manufacturing method for producing silicon carbide crystal using so...