Kazumasa Hiramatsu

Person

Yokkaichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Group 3-5 nitride semiconductor multilayer substrate, method for ma...
- Patent number 8,053,811
- Issue date Nov 8, 2011
- Sumitomo Chemical Company Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate of gallium nitride single crystal and process for produci...
- Patent number 7,399,687
- Issue date Jul 15, 2008
- Sumitomo Chemical Company, Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing III-V group compound semiconductor
- Patent number 6,946,308
- Issue date Sep 20, 2005
- Sumitomo Chemical Company, Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V compound semiconductor
- Patent number 6,844,574
- Issue date Jan 18, 2005
- Sumitomo Chemical Company, Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating III-V group compound semiconductor
- Patent number 6,756,246
- Issue date Jun 29, 2004
- Sumitomo Chemical Company, Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light receiving element
- Patent number 6,734,515
- Issue date May 11, 2004
- Mitsubishi Cable Industries, Ltd.
- Kazuyuki Tadatomo
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Group III-V compound semiconductor and method of producing the same
- Patent number 6,503,610
- Issue date Jan 7, 2003
- Sumitomo Chemical Company, Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GAN group crystal base member having low dislocation density, use t...
- Patent number 6,225,650
- Issue date May 1, 2001
- Mitsubishi Cable Industries, Ltd.
- Kazuyuki Tadatomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing group III nitride compound semiconductor subst...
- Patent number 5,846,844
- Issue date Dec 8, 1998
- Toyoda Gosei Co., Ltd.
- Isamu Akasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN single crystal
- Patent number 5,810,925
- Issue date Sep 22, 1998
- Mitsubishi Cable Industries, Ltd.
- Kazuyuki Tadatomo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gan single crystal
- Patent number 5,770,887
- Issue date Jun 23, 1998
- Mitsubishi Cable Industries, Ltd.
- Kazuyuki Tadatomo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Compound semiconductor vapor phase epitaxial device
- Patent number 5,370,738
- Issue date Dec 6, 1994
- Pioneer Electronic Corporation
- Atsushi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride group semiconductor and light emitting diode compri...
- Patent number 5,218,216
- Issue date Jun 8, 1993
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate for growing gallium nitride compound-semiconductor device...
- Patent number 5,122,845
- Issue date Jun 16, 1992
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process of vapor growth of gallium nitride and its apparatus
- Patent number 4,911,102
- Issue date Mar 27, 1990
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Group 3-5 Nitride Semiconductor Multilayer Substrate, Method for Ma...
- Publication number 20090085165
- Publication date Apr 2, 2009
- Sumitomo Chemical Company, Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Substrate of gallium nitride single crystal and process for produci...
- Publication number 20060172512
- Publication date Aug 3, 2006
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride semiconductor film and its production method
- Publication number 20040157358
- Publication date Aug 12, 2004
- Kazumasa Hiramatsu
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing III-V group compound semiconductor
- Publication number 20030211710
- Publication date Nov 13, 2003
- Kazumasa Hiramatsu
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for fabricating III-V Group compound semiconductor
- Publication number 20030045017
- Publication date Mar 6, 2003
- Kazumasa Hiramatsu
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-V compound semiconductor and method of producing the same
- Publication number 20010031385
- Publication date Oct 18, 2001
- Kazumasa Hiramatsu
- C30 - CRYSTAL GROWTH

Kazumasa Hiramatsu

Person

Patents Grantslast 30 patents

Group 3-5 nitride semiconductor multilayer substrate, method for ma...

Substrate of gallium nitride single crystal and process for produci...

Method of manufacturing III-V group compound semiconductor

III-V compound semiconductor

Method for fabricating III-V group compound semiconductor

Semiconductor light receiving element

Group III-V compound semiconductor and method of producing the same

GAN group crystal base member having low dislocation density, use t...

Method for producing group III nitride compound semiconductor subst...

GaN single crystal

Gan single crystal

Compound semiconductor vapor phase epitaxial device

Gallium nitride group semiconductor and light emitting diode compri...

Substrate for growing gallium nitride compound-semiconductor device...

Process of vapor growth of gallium nitride and its apparatus

Patents Applicationslast 30 patents

Group 3-5 Nitride Semiconductor Multilayer Substrate, Method for Ma...

Substrate of gallium nitride single crystal and process for produci...

Group III nitride semiconductor film and its production method

Method of manufacturing III-V group compound semiconductor

Method for fabricating III-V Group compound semiconductor

Group III-V compound semiconductor and method of producing the same