Kazuo Hashimi

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with inverted trapezoidal cross sectional prof...
- Patent number 8,809,919
- Issue date Aug 19, 2014
- Fujitsu Semiconductor Limited
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device and semiconductor manu...
- Patent number 8,685,265
- Issue date Apr 1, 2014
- Fujitsu Semiconductor Limited
- Yoshiyuki Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer having W-shaped dummy metal filling section wit...
- Patent number 8,592,951
- Issue date Nov 26, 2013
- Fujitsu Semiconductor Limited
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for evaluating impurity distribution under gate electrode wi...
- Patent number 8,163,572
- Issue date Apr 24, 2012
- Fujitsu Semiconductor Limited
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 8,114,764
- Issue date Feb 14, 2012
- Fujitsu Semiconductor Limited
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for evaluating impurity distribution under gate electrode wi...
- Patent number 7,691,649
- Issue date Apr 6, 2010
- Fujitsu Microelectronics Limited
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 7,642,192
- Issue date Jan 5, 2010
- Fujitsu Microelectronics Limited
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,528,413
- Issue date Mar 4, 2003
- Fujitsu Limited
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Successive dry etching of alternating laminate
- Patent number 5,830,807
- Issue date Nov 3, 1998
- Fujitsu Limited
- Daisuke Matsunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process and apparatus for recrystallization of semiconductor layer
- Patent number 5,322,589
- Issue date Jun 21, 1994
- Fujitsu Limited
- Hidesato Matsuoka
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANU...
- Publication number 20120288969
- Publication date Nov 15, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Yoshiyuki Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR EVALUATING IMPURITY DISTRIBUTION UNDER GATE ELECTRODE WI...
- Publication number 20120181671
- Publication date Jul 19, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20120104477
- Publication date May 3, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20100072522
- Publication date Mar 25, 2010
- FUJITSU MICROELECTRONICS LIMITED
- Kazuo HASHIMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR EVALUATING IMPURITY DISTRIBUTION UNDER GATE ELECTRODE WI...
- Publication number 20100065947
- Publication date Mar 18, 2010
- Fujitsu Microelectronics Limited
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device, a manufacturing method thereof, and an evalua...
- Publication number 20070138561
- Publication date Jun 21, 2007
- FUJITSU LIMITED
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and fabrication method thereof
- Publication number 20060006477
- Publication date Jan 12, 2006
- FUJITSU LIMITED
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20020177304
- Publication date Nov 28, 2002
- FUJITSU LIMITED
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS

Kazuo Hashimi

Person

Patents Grantslast 30 patents

Semiconductor device with inverted trapezoidal cross sectional prof...

Manufacturing method of semiconductor device and semiconductor manu...

Semiconductor wafer having W-shaped dummy metal filling section wit...

Method for evaluating impurity distribution under gate electrode wi...

Semiconductor device and fabrication method thereof

Method for evaluating impurity distribution under gate electrode wi...

Semiconductor device and fabrication method thereof

Semiconductor device and method of manufacturing the same

Successive dry etching of alternating laminate

Process and apparatus for recrystallization of semiconductor layer

Patents Applicationslast 30 patents

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANU...

METHOD FOR EVALUATING IMPURITY DISTRIBUTION UNDER GATE ELECTRODE WI...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

METHOD FOR EVALUATING IMPURITY DISTRIBUTION UNDER GATE ELECTRODE WI...

Semiconductor device, a manufacturing method thereof, and an evalua...

Semiconductor device and fabrication method thereof

Semiconductor device and method of manufacturing the same