Kazuo Tsuru

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Yokohama, JP

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with a high breakdown voltage
- Patent number 5,031,021
- Issue date Jul 9, 1991
- Kabushiki Kaisha Toshiba
- Yoshiro Baba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling lifetime of minority carriers by electron bea...
- Patent number 4,585,489
- Issue date Apr 29, 1986
- Kabushiki Kaisha Toshiba
- Shun-ichi Hiraki
- H01 - BASIC ELECTRIC ELEMENTS