Kazutoshi Kojima

Person

Ibaraki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide epitaxial wafer having a thick silicon carbide laye...
- Patent number 10,879,359
- Issue date Dec 29, 2020
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Keiko Masumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer manufacturing method, epitaxial wafer, semiconducto...
- Patent number 10,354,867
- Issue date Jul 16, 2019
- Fuji Electric Co., Ltd.
- Hidekazu Tsuchida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide epitaxial wafer, method for manufacturing silicon c...
- Patent number 9,587,326
- Issue date Mar 7, 2017
- National Institute of Advanced Industrial Science and Technology
- Keiko Masumoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor structure, semiconductor device, and method for produ...
- Patent number 9,496,345
- Issue date Nov 15, 2016
- National Institute of Advanced Industrial Science and Technology
- Kazutoshi Kojima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide single crystal and manufacturing method of the same
- Patent number 9,053,834
- Issue date Jun 9, 2015
- Denso Corporation
- Fusao Hirose
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial SiC single crystal substrate and method of manufacture of...
- Patent number 8,716,718
- Issue date May 6, 2014
- Showa Denko K.K.
- Kenji Momose
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial SiC single crystal substrate and method of manufacture of...
- Patent number 8,293,623
- Issue date Oct 23, 2012
- Showa Denko K.K.
- Kenji Momose
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide epitaxial wafer, method for producing such wafer, a...
- Patent number 7,635,868
- Issue date Dec 22, 2009
- National Institute of Advanced Industrial Science and Technology
- Kazutoshi Kojima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,265,388
- Issue date Sep 4, 2007
- National Institute of Advanced Industrial Science and Technology
- Kenji Fukuda
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240332281
- Publication date Oct 3, 2024
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Akira NAKAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER AND SILICON CARBIDE SEMICONDUCTOR D...
- Publication number 20190333998
- Publication date Oct 31, 2019
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Keiko MASUMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREOF
- Publication number 20190273136
- Publication date Sep 5, 2019
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Keiko MASUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER MANUFACTURING METHOD, EPITAXIAL WAFER, SEMICONDUCTO...
- Publication number 20180012758
- Publication date Jan 11, 2018
- Fuji Electric Co., Ltd.
- Hidekazu TSUCHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Epitaxial Wafer, Method for Manufacturing Silicon C...
- Publication number 20160168751
- Publication date Jun 16, 2016
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Keiko MASUMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODU...
- Publication number 20150214306
- Publication date Jul 30, 2015
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Kazutoshi Kojima
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURE OF...
- Publication number 20130009170
- Publication date Jan 10, 2013
- SHOWA DENKO K.K.
- Kenji MOMOSE
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF THE SAME
- Publication number 20120025153
- Publication date Feb 2, 2012
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Fusao Hirose
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURE OF...
- Publication number 20110006309
- Publication date Jan 13, 2011
- Showa Denko K.K.
- Kenji Momose
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon carbide epitaxial wafer, method for producing such wafer, a...
- Publication number 20070001175
- Publication date Jan 4, 2007
- Kazutoshi Kojima
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor device
- Publication number 20050077591
- Publication date Apr 14, 2005
- Kenji Fukuda
- H01 - BASIC ELECTRIC ELEMENTS

Kazutoshi Kojima

Person

Patents Grantslast 30 patents

Silicon carbide epitaxial wafer having a thick silicon carbide laye...

Epitaxial wafer manufacturing method, epitaxial wafer, semiconducto...

Silicon carbide epitaxial wafer, method for manufacturing silicon c...

Semiconductor structure, semiconductor device, and method for produ...

Silicon carbide single crystal and manufacturing method of the same

Epitaxial SiC single crystal substrate and method of manufacture of...

Epitaxial SiC single crystal substrate and method of manufacture of...

Silicon carbide epitaxial wafer, method for producing such wafer, a...

Semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SILICON CARBIDE EPITAXIAL WAFER AND SILICON CARBIDE SEMICONDUCTOR D...

SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREOF

EPITAXIAL WAFER MANUFACTURING METHOD, EPITAXIAL WAFER, SEMICONDUCTO...

Silicon Carbide Epitaxial Wafer, Method for Manufacturing Silicon C...

SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODU...

EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURE OF...

SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF THE SAME

EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURE OF...

Silicon carbide epitaxial wafer, method for producing such wafer, a...

Semiconductor device