Kazuya Takada

Person

Yamaguchi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Layered body having a single crystal layer
- Patent number 9,297,093
- Issue date Mar 29, 2016
- Tokuyama Corporation
- Toru Kinoshita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing a group III nitride crystal
- Patent number 8,926,752
- Issue date Jan 6, 2015
- Tokuyama Corporation
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method of a layered body
- Patent number 8,704,239
- Issue date Apr 22, 2014
- Tokuyama Corporation
- Toru Kinoshita
- C30 - CRYSTAL GROWTH
Information Patent Grant
P-type group III nitride semiconductor and group III nitride semico...
- Patent number 8,238,391
- Issue date Aug 7, 2012
- Tokuyama Corporation
- Toru Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum nitride single crystal film, aluminum nitride single cryst...
- Patent number 8,137,825
- Issue date Mar 20, 2012
- Tokuyama Corporation
- Hiroyuki Fukuyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
n-Type conductive aluminum nitride semiconductor crystal and manufa...
- Patent number 8,129,208
- Issue date Mar 6, 2012
- Tokuyama Corporation
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for producing group III nitride
- Patent number 7,947,577
- Issue date May 24, 2011
- Tokuyama Corporation
- Toru Nagashima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Aluminum nitride single-crystal multi-layered substrate
- Patent number 7,528,462
- Issue date May 5, 2009
- Tokuyama Corporation
- Hiroyuki Fukuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly crystalline aluminum nitride multi-layered substrate and pro...
- Patent number 7,338,555
- Issue date Mar 4, 2008
- Tokuyama Corporation
- Hiroyuki Fukuyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Composite nitride sintered body
- Patent number 4,642,298
- Issue date Feb 10, 1987
- Tokuyama Soda Kabushiki Kaisha
- Nobuyuki Kuramoto
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Basic aluminum sulfate and process for production thereof
- Patent number 4,526,772
- Issue date Jul 2, 1985
- Tokuyama Suda Kabushiki Kaisha
- Kazuya Takada
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES

Patents Applicationslast 30 patents

Information Patent Application
Method for Manufacturing Optical Element
- Publication number 20130214325
- Publication date Aug 22, 2013
- Tokuyama Corporation
- Toru Kinoshita
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD OF AN ALUMINUM NITRIDE SINGLE CRYSTAL
- Publication number 20120240845
- Publication date Sep 27, 2012
- Tohoku University
- Hiroyuki Fukuyama
- C30 - CRYSTAL GROWTH
Information Patent Application
Production Method of a Layered Body
- Publication number 20120223329
- Publication date Sep 6, 2012
- Tokuyama Corporation
- Toru Kinoshita
- C30 - CRYSTAL GROWTH
Information Patent Application
Production Method of a Layered Body
- Publication number 20120183809
- Publication date Jul 19, 2012
- Tokuyama Corporation
- Toru Kinoshita
- C30 - CRYSTAL GROWTH
Information Patent Application
P-TYPE GROUP III NITRIDE SEMICONDUCTOR AND GROUP III NITRIDE SEMICO...
- Publication number 20110128981
- Publication date Jun 2, 2011
- Toru Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAMINATED BODY AND THE METHOD FOR PRODUCTION THEREOF
- Publication number 20110094438
- Publication date Apr 28, 2011
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NIT...
- Publication number 20110018104
- Publication date Jan 27, 2011
- Toru Nagashima
- C30 - CRYSTAL GROWTH
Information Patent Application
N-TYPE CONDUCTIVE ALUMINUM NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFA...
- Publication number 20100320462
- Publication date Dec 23, 2010
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
Aluminum nitride single crystal film, aluminum nitride single cryst...
- Publication number 20100215987
- Publication date Aug 26, 2010
- Hiroyuki Fukuyama
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING A GROUP III NITRIDE CRYSTAL
- Publication number 20100093124
- Publication date Apr 15, 2010
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING GROUP III NITRIDE
- Publication number 20100029065
- Publication date Feb 4, 2010
- Toru Nagashima
- C30 - CRYSTAL GROWTH
Information Patent Application
Aluminum nitride single-crystal multi-layered substrate
- Publication number 20060175619
- Publication date Aug 10, 2006
- TOKUYAMA CORPORATION
- Hiroyuki Fukuyama
- C30 - CRYSTAL GROWTH
Information Patent Application
Highly crystalline aluminum nitride multi-layered substrate and pro...
- Publication number 20050059257
- Publication date Mar 17, 2005
- Hiroyuki Fukuyama
- C30 - CRYSTAL GROWTH

Kazuya Takada

Person

Patents Grantslast 30 patents

Layered body having a single crystal layer

Method of producing a group III nitride crystal

Production method of a layered body

P-type group III nitride semiconductor and group III nitride semico...

Aluminum nitride single crystal film, aluminum nitride single cryst...

n-Type conductive aluminum nitride semiconductor crystal and manufa...

Method and apparatus for producing group III nitride

Aluminum nitride single-crystal multi-layered substrate

Highly crystalline aluminum nitride multi-layered substrate and pro...

Composite nitride sintered body

Basic aluminum sulfate and process for production thereof

Patents Applicationslast 30 patents

Method for Manufacturing Optical Element

PRODUCTION METHOD OF AN ALUMINUM NITRIDE SINGLE CRYSTAL

Production Method of a Layered Body

Production Method of a Layered Body

P-TYPE GROUP III NITRIDE SEMICONDUCTOR AND GROUP III NITRIDE SEMICO...

LAMINATED BODY AND THE METHOD FOR PRODUCTION THEREOF

METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NIT...

N-TYPE CONDUCTIVE ALUMINUM NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFA...

Aluminum nitride single crystal film, aluminum nitride single cryst...

METHOD OF PRODUCING A GROUP III NITRIDE CRYSTAL

METHOD AND APPARATUS FOR PRODUCING GROUP III NITRIDE

Aluminum nitride single-crystal multi-layered substrate

Highly crystalline aluminum nitride multi-layered substrate and pro...