Kazuyoshi Asai

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Iruma, JP

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Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor with combination Schottky-junction gate
- Patent number 4,463,366
- Issue date Jul 31, 1984
- Nippon Telegraph & Telephone Public Corp.
- Yasunobu Ishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effects semiconductor devices
- Patent number 4,331,967
- Issue date May 25, 1982
- Nippon Telegraph and Telephone Public Corp.
- Katsuhiko Kurumada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a FET device disposed in a compound s/c lay...
- Patent number 4,327,475
- Issue date May 4, 1982
- Nippon Telegraph & Telephone Public Corporation
- Kazuyoshi Asai
- H01 - BASIC ELECTRIC ELEMENTS