Ke-Gang Wen

Person

Hsinchu, TW

People

Patents Applicationslast 30 patents

Information Patent Application
Interconnect Structure for Front-to-Front Stacked Chips
- Publication number 20250046756
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Chieh Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heat Dissipating Structure and Methods of Forming The Same
- Publication number 20250046667
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsung-Chieh Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH BACKSIDE THROUGH SUBSTRATE THERMAL CON...
- Publication number 20250046678
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Chieh Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH BACKSIDE INTERCONNECT STRUCTURE AND THRO...
- Publication number 20250038074
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Chieh Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thermal Dissipation Structures and Methods for Forming Same
- Publication number 20240266334
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ke-Gang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MULTI-DIMENSION THROUGH SILICON VIA...
- Publication number 20240145435
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ke-Gang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Layer-By-Layer Formation Of Through-Substrate Via
- Publication number 20240120257
- Publication date Apr 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Chieh Hsiao
- H01 - BASIC ELECTRIC ELEMENTS

Ke-Gang Wen

Person

Patents Applicationslast 30 patents

Interconnect Structure for Front-to-Front Stacked Chips

Heat Dissipating Structure and Methods of Forming The Same

SEMICONDUCTOR STRUCTURE WITH BACKSIDE THROUGH SUBSTRATE THERMAL CON...

SEMICONDUCTOR DEVICES WITH BACKSIDE INTERCONNECT STRUCTURE AND THRO...

Thermal Dissipation Structures and Methods for Forming Same

SEMICONDUCTOR DEVICE INCLUDING MULTI-DIMENSION THROUGH SILICON VIA...

Layer-By-Layer Formation Of Through-Substrate Via