Ke Liang

Person

Wuhan City, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Memory device, a memory system and an operation method
- Patent number 12,056,355
- Issue date Aug 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhipeng Dong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
3D NAND memory device and control method thereof
- Patent number 12,057,176
- Issue date Aug 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhipeng Dong
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and program operation thereof
- Patent number 11,715,523
- Issue date Aug 1, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ke Liang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and erase operation thereof
- Patent number 11,527,292
- Issue date Dec 13, 2022
- Yangtze Memory Technologies Co., Ltd.
- Ke Liang
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of enhancing speed of reading data from memory device
- Patent number 11,468,954
- Issue date Oct 11, 2022
- Yangtze Memory Technologies Co., Ltd.
- Ke Liang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for programming memory system
- Patent number 11,145,362
- Issue date Oct 12, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ke Liang
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense circuit and sensing operation method in flash memory devices
- Patent number 11,114,168
- Issue date Sep 7, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ke Liang
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of enhancing speed of reading data from memory device
- Patent number 11,056,196
- Issue date Jul 6, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ke Liang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for programming memory system
- Patent number 10,943,650
- Issue date Mar 9, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ke Liang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE, A MEMORY SYSTEM AND AN OPERATION METHOD
- Publication number 20240345728
- Publication date Oct 17, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhipeng Dong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE AND OPERATION METHOD THEREOF
- Publication number 20240331775
- Publication date Oct 3, 2024
- Yangtze Memory Technologies Co., Ltd.
- Li Xiang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY, OPERATION METHOD OF MEMORY, AND MEMORY SYSTEM
- Publication number 20240331749
- Publication date Oct 3, 2024
- Yangtze Memory Technologies Co., Ltd.
- Chong Jin
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM, MEMORY AND MEMORY CONTROL METHOD
- Publication number 20240221842
- Publication date Jul 4, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yi CAO
- G11 - INFORMATION STORAGE
Information Patent Application
3D NAND MEMORY DEVICE AND CONTROL METHOD THEREOF
- Publication number 20240087654
- Publication date Mar 14, 2024
- YANGTZE MEMORY TECHNOLOGIES., LTD.
- Zhipeng DONG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE, A MEMORY SYSTEM AND AN OPERATION METHOD
- Publication number 20230342029
- Publication date Oct 26, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhipeng Dong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE, MEMORY SYSTEM, AND METHOD OF OPERATING THE SAME
- Publication number 20230326537
- Publication date Oct 12, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhipeng Dong
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND ERASE OPERATION THEREOF
- Publication number 20220310169
- Publication date Sep 29, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Ke Liang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND PROGRAM OPERATION THEREOF
- Publication number 20220301626
- Publication date Sep 22, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Ke Liang
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF ENHANCING SPEED OF READING DATA FROM MEMORY DEVICE
- Publication number 20210280258
- Publication date Sep 9, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ke Liang
- G11 - INFORMATION STORAGE
Information Patent Application
REDUCED-PASS ERASE VERIFY FOR NONVOLATILE STORAGE MEDIA
- Publication number 20210272638
- Publication date Sep 2, 2021
- Intel Corporation
- Chunyuan HOU
- G11 - INFORMATION STORAGE
Information Patent Application
SENSE CIRCUIT AND SENSING OPERATION METHOD IN FLASH MEMORY DEVICES
- Publication number 20210174880
- Publication date Jun 10, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ke Liang
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF ENHANCING SPEED OF READING DATA FROM MEMORY DEVICE
- Publication number 20210166769
- Publication date Jun 3, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ke Liang
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PROGRAMMING MEMORY SYSTEM
- Publication number 20210151100
- Publication date May 20, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Ke Liang
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PROGRAMMING MEMORY SYSTEM
- Publication number 20200234759
- Publication date Jul 23, 2020
- Yangtze Memory Technologies Co., Ltd.
- Ke Liang
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Memory device, a memory system and an operation method

3D NAND memory device and control method thereof

Memory device and program operation thereof

Memory device and erase operation thereof

Methods of enhancing speed of reading data from memory device

Method for programming memory system

Sense circuit and sensing operation method in flash memory devices

Methods of enhancing speed of reading data from memory device

Method for programming memory system

Patents Applicationslast 30 patents

MEMORY DEVICE, A MEMORY SYSTEM AND AN OPERATION METHOD

MEMORY DEVICE AND OPERATION METHOD THEREOF

MEMORY, OPERATION METHOD OF MEMORY, AND MEMORY SYSTEM

MEMORY SYSTEM, MEMORY AND MEMORY CONTROL METHOD

3D NAND MEMORY DEVICE AND CONTROL METHOD THEREOF

MEMORY DEVICE, A MEMORY SYSTEM AND AN OPERATION METHOD

MEMORY DEVICE, MEMORY SYSTEM, AND METHOD OF OPERATING THE SAME

MEMORY DEVICE AND ERASE OPERATION THEREOF

MEMORY DEVICE AND PROGRAM OPERATION THEREOF

METHODS OF ENHANCING SPEED OF READING DATA FROM MEMORY DEVICE

REDUCED-PASS ERASE VERIFY FOR NONVOLATILE STORAGE MEDIA

SENSE CIRCUIT AND SENSING OPERATION METHOD IN FLASH MEMORY DEVICES

METHODS OF ENHANCING SPEED OF READING DATA FROM MEMORY DEVICE

METHOD FOR PROGRAMMING MEMORY SYSTEM

METHOD FOR PROGRAMMING MEMORY SYSTEM