Keh-Chiang Ku

Person

Sindan City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Implanted metal silicide for semiconductor device
- Patent number 8,349,732
- Issue date Jan 8, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k metal gate device
- Patent number 8,258,546
- Issue date Sep 4, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Lung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow junction formation and high dopant activation rate of MOS d...
- Patent number 8,212,253
- Issue date Jul 3, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Feng Nieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction profile engineering using staged thermal annealing
- Patent number 8,058,134
- Issue date Nov 15, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Ting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow junction formation and high dopant activation rate of MOS d...
- Patent number 8,039,375
- Issue date Oct 18, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Feng Nieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implantation method for reducing threshold voltage for high-K metal...
- Patent number 7,994,051
- Issue date Aug 9, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Lung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having ultra-shallow and highly activated sour...
- Patent number 7,741,699
- Issue date Jun 22, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Keh-Chiang Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing poly-depletion through co-implanting carbon and nitrogen
- Patent number 7,736,968
- Issue date Jun 15, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Keh-Chiang Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short channel effect engineering in MOS device using epitaxially ca...
- Patent number 7,504,292
- Issue date Mar 17, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Keh-Chiang Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced activation approach for MOS devices
- Patent number 7,494,857
- Issue date Feb 24, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction leakage reduction in SiGe process by implantation
- Patent number 7,482,211
- Issue date Jan 27, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Feng Nieh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Shallow Junction Formation and High Dopant Activation Rate of MOS D...
- Publication number 20110316079
- Publication date Dec 29, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Feng Nieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-K Metal Gate Device
- Publication number 20110272766
- Publication date Nov 10, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Lung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Junction Profile Engineering Using Staged Thermal Annealing
- Publication number 20100210086
- Publication date Aug 19, 2010
- Li-Ting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING POLY-DEPLETION THROUGH CO-IMPLANTING CARBON AND NITROGEN
- Publication number 20100105185
- Publication date Apr 29, 2010
- Keh-Chiang Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLANTATION METHOD FOR REDUCING THRESHOLD VOLTAGE FOR HIGH-K METAL...
- Publication number 20100096705
- Publication date Apr 22, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Lung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and a Method of Manufacture for Low Resistance NiSix
- Publication number 20100013029
- Publication date Jan 21, 2010
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shallow junction formation and high dopant activation rate of MOS d...
- Publication number 20080293204
- Publication date Nov 27, 2008
- Chun-Feng Nieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiGe or SiC layer on STI sidewalls
- Publication number 20080290420
- Publication date Nov 27, 2008
- Ming-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ENHANCING DOPANT ACTIVATION WITHOUT SUFFERING ADDITIONAL...
- Publication number 20080242039
- Publication date Oct 2, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Keh-Chiang Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Advanced activation approach for MOS devices
- Publication number 20080160709
- Publication date Jul 3, 2008
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Short channel effect engineering in MOS device using epitaxially ca...
- Publication number 20080132019
- Publication date Jun 5, 2008
- Keh-Chiang Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Junction leakage reduction in SiGe process by tilt implantation
- Publication number 20070298557
- Publication date Dec 27, 2007
- Chun-Feng Nieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Junction leakage reduction in SiGe process by implantation
- Publication number 20070298565
- Publication date Dec 27, 2007
- Chun-Feng Nieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra-shallow and highly activated source/drain extension formation...
- Publication number 20070284615
- Publication date Dec 13, 2007
- Keh-Chiang Ku
- H01 - BASIC ELECTRIC ELEMENTS

Keh-Chiang Ku

Person

Patents Grantslast 30 patents

Implanted metal silicide for semiconductor device

High-k metal gate device

Shallow junction formation and high dopant activation rate of MOS d...

Junction profile engineering using staged thermal annealing

Shallow junction formation and high dopant activation rate of MOS d...

Implantation method for reducing threshold voltage for high-K metal...

Semiconductor device having ultra-shallow and highly activated sour...

Reducing poly-depletion through co-implanting carbon and nitrogen

Short channel effect engineering in MOS device using epitaxially ca...

Advanced activation approach for MOS devices

Junction leakage reduction in SiGe process by implantation

Patents Applicationslast 30 patents

Shallow Junction Formation and High Dopant Activation Rate of MOS D...

High-K Metal Gate Device

Junction Profile Engineering Using Staged Thermal Annealing

REDUCING POLY-DEPLETION THROUGH CO-IMPLANTING CARBON AND NITROGEN

IMPLANTATION METHOD FOR REDUCING THRESHOLD VOLTAGE FOR HIGH-K METAL...

Structure and a Method of Manufacture for Low Resistance NiSix

Shallow junction formation and high dopant activation rate of MOS d...

SiGe or SiC layer on STI sidewalls

METHOD OF ENHANCING DOPANT ACTIVATION WITHOUT SUFFERING ADDITIONAL...

Advanced activation approach for MOS devices

Short channel effect engineering in MOS device using epitaxially ca...

Junction leakage reduction in SiGe process by tilt implantation

Junction leakage reduction in SiGe process by implantation

Ultra-shallow and highly activated source/drain extension formation...