Kei Kosaka

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Nagoya-City, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method for forming AlGaN crystal layer
- Patent number 7,713,847
- Issue date May 11, 2010
- NGK Insulators, Ltd.
- Kei Kosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron-emitting device and method for manufacturing same
- Patent number 7,635,944
- Issue date Dec 22, 2009
- NGK Insulators, Ltd.
- Iwao Ohwada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming AlGaN crystal layer
- Patent number 7,632,741
- Issue date Dec 15, 2009
- NGK Insulators, Ltd.
- Kei Kosaka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FORMING AlGaN CRYSTAL LAYER
- Publication number 20080242060
- Publication date Oct 2, 2008
- NGK Insulators, Ltd.
- Kei Kosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING AlGaN CRYSTAL LAYER
- Publication number 20080233721
- Publication date Sep 25, 2008
- NGK Insulators, Ltd.
- Kei Kosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electron-emitting device and method for manufacturing same
- Publication number 20060113608
- Publication date Jun 1, 2006
- NGK Insulators, Ltd.
- Iwao Ohwada
- B82 - NANO-TECHNOLOGY