Keiichi Murayama

Person

Osaka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method and semiconductor device
- Patent number 12,051,688
- Issue date Jul 30, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Kazumi Tsutsumida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,017,975
- Issue date Sep 13, 2011
- Panasonic Corporation
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a hetero-junction bipolar transistor an...
- Patent number 7,989,845
- Issue date Aug 2, 2011
- Panasonic Corporation
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor and manufacturing method thereof
- Patent number 7,728,357
- Issue date Jun 1, 2010
- Panasonic Corporation
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor and power amplifier
- Patent number 7,566,920
- Issue date Jul 28, 2009
- Panasonic Corporation
- Katsuhiko Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor and method for fabricating the same
- Patent number 7,449,729
- Issue date Nov 11, 2008
- Panasonic Corporation
- Kenichi Miyajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor having an emitter layer made of a...
- Patent number 7,301,181
- Issue date Nov 27, 2007
- Matsushita Electric Industrial Co., Ltd.
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element and method for fabricating the same
- Patent number 7,176,098
- Issue date Feb 13, 2007
- Matsushita Electric Industrial Co., Ltd.
- Keisuke Kojima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-junction bipolar transistor and manufacturing method thereof
- Patent number 7,176,099
- Issue date Feb 13, 2007
- Matsushita Electric Industrial Co., Ltd.
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,091,528
- Issue date Aug 15, 2006
- Matsushita Electric Industrial Co., Ltd.
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a photosensitive resin covering at l...
- Patent number 7,012,337
- Issue date Mar 14, 2006
- Matsushita Electric Industrial Co., Ltd.
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor and method for fabricating the same
- Patent number 7,001,820
- Issue date Feb 21, 2006
- Matsushita Electric Industrial Co., Ltd.
- Kenichi Miyajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 6,982,141
- Issue date Jan 3, 2006
- Matsushita Electric Industrial Co., Ltd.
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-junction bipolar transistor and manufacturing method thereof
- Patent number 6,903,388
- Issue date Jun 7, 2005
- Matsushita Electric Industrial Co., Ltd.
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor
- Patent number 6,677,625
- Issue date Jan 13, 2004
- Matsushita Electric Industrial Co., Ltd.
- Manabu Yanagihara
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20240290774
- Publication date Aug 29, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Kazumi TSUTSUMIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20240038758
- Publication date Feb 1, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Kazumi TSUTSUMIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A HETERO-JUNCTION BIPOLAR TRANSISTOR AN...
- Publication number 20110250726
- Publication date Oct 13, 2011
- PANASONIC CORPORATION
- Keiichi MURAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20100187571
- Publication date Jul 29, 2010
- PANASONIC CORPORATION
- Kenichi MIYAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20100171151
- Publication date Jul 8, 2010
- PANASONIC CORPORATION
- Kenichi MIYAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20090230431
- Publication date Sep 17, 2009
- PANASONIC CORPORATION
- Keiichi MURAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20080296624
- Publication date Dec 4, 2008
- Matsushita Electric Industrial Co., Ltd.
- Keiichi MURAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20080176391
- Publication date Jul 24, 2008
- Matsushita Electric Industrial Co., Ltd.
- Hirotaka MIYAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20080088020
- Publication date Apr 17, 2008
- Matsushita Electric Industrial Co., Ltd.
- Kenichi MIYAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20070145412
- Publication date Jun 28, 2007
- Matsushita Electric Industrial Co., Ltd.
- Keiichi MURAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor and power amplifier
- Publication number 20070012949
- Publication date Jan 18, 2007
- Katsuhiko Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20060289896
- Publication date Dec 28, 2006
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Hirotaka Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hetero-junction bipolar transistor and manufacturing method thereof
- Publication number 20060284212
- Publication date Dec 21, 2006
- Matsushita Electric Industrial Co., Ltd.
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hetero-junction bipolar transistor and manufacturing method of the...
- Publication number 20060267047
- Publication date Nov 30, 2006
- Matsushita Electric Industrial Co., Ltd.
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transistor and method for fabricating the same
- Publication number 20060237743
- Publication date Oct 26, 2006
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Kenichi Miyajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor integrated circuit device and manufacturing method thereof
- Publication number 20060132241
- Publication date Jun 22, 2006
- Katsuhiko Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20060030113
- Publication date Feb 9, 2006
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Kenichi Miyajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transistor and manufacturing method thereof
- Publication number 20050199909
- Publication date Sep 15, 2005
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor element and method for fabricating the same
- Publication number 20050199911
- Publication date Sep 15, 2005
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Keisuke Kojima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hetero-junction bipolar transistor and manufacturing method thereof
- Publication number 20050199910
- Publication date Sep 15, 2005
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20050145884
- Publication date Jul 7, 2005
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20050042549
- Publication date Feb 24, 2005
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hetero-junction bipolar transistor and manufacturing method thereof
- Publication number 20040262634
- Publication date Dec 30, 2004
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20040021153
- Publication date Feb 5, 2004
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor and method of fabricating the same
- Publication number 20010010388
- Publication date Aug 2, 2001
- Manabu Yanagihara
- H01 - BASIC ELECTRIC ELEMENTS

Keiichi Murayama

Person

Patents Grantslast 30 patents

Manufacturing method and semiconductor device

Semiconductor device

Semiconductor device having a hetero-junction bipolar transistor an...

Heterojunction bipolar transistor and manufacturing method thereof

Bipolar transistor and power amplifier

Heterojunction bipolar transistor and method for fabricating the same

Heterojunction bipolar transistor having an emitter layer made of a...

Semiconductor element and method for fabricating the same

Hetero-junction bipolar transistor and manufacturing method thereof

Semiconductor device

Semiconductor device including a photosensitive resin covering at l...

Heterojunction bipolar transistor and method for fabricating the same

Semiconductor device and manufacturing method thereof

Hetero-junction bipolar transistor and manufacturing method thereof

Bipolar transistor

Patents Applicationslast 30 patents

MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING A HETERO-JUNCTION BIPOLAR TRANSISTOR AN...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

HETEROJUNCTION BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

HETEROJUNCTION BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF

Bipolar transistor and power amplifier

Semiconductor device and method for fabricating the same

Hetero-junction bipolar transistor and manufacturing method thereof

Hetero-junction bipolar transistor and manufacturing method of the...

Heterojunction bipolar transistor and method for fabricating the same

Transistor integrated circuit device and manufacturing method thereof

HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD FOR FABRICATING THE SAME

Heterojunction bipolar transistor and manufacturing method thereof

Semiconductor element and method for fabricating the same

Hetero-junction bipolar transistor and manufacturing method thereof

Semiconductor device

Semiconductor device and manufacturing method thereof

Hetero-junction bipolar transistor and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Bipolar transistor and method of fabricating the same