Keiji ISHIBASHI

Person

Hyogo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 11,094,537
- Issue date Aug 17, 2021
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 10,600,676
- Issue date Mar 24, 2020
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- B32 - LAYERED PRODUCTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 10,186,451
- Issue date Jan 22, 2019
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride crystal substrate, epilayer-containing group III...
- Patent number 10,113,248
- Issue date Oct 30, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride crystal, nitride crystal substrate, epilayer-containing nit...
- Patent number 10,078,059
- Issue date Sep 18, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 9,923,063
- Issue date Mar 20, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 9,917,004
- Issue date Mar 13, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate, semiconductor device and methods for man...
- Patent number 9,728,612
- Issue date Aug 8, 2017
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Silicon carbide substrate, semiconductor device, and methods for ma...
- Patent number 9,722,028
- Issue date Aug 1, 2017
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal substrate, epilayer-containing group III...
- Patent number 9,708,735
- Issue date Jul 18, 2017
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride crystal, nitride crystal substrate, epilayer-containing nit...
- Patent number 9,570,540
- Issue date Feb 14, 2017
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal substrate, epilayer-containing group III...
- Patent number 9,499,925
- Issue date Nov 22, 2016
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate, semiconductor device, and method of manufacturing the same
- Patent number 9,490,132
- Issue date Nov 8, 2016
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate, semiconductor device and methods for man...
- Patent number 9,484,416
- Issue date Nov 1, 2016
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate, semiconductor device, and methods for ma...
- Patent number 9,437,690
- Issue date Sep 6, 2016
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide single-crystal substrate
- Patent number 9,324,814
- Issue date Apr 26, 2016
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- B24 - GRINDING POLISHING
Information Patent Grant
Silicon carbide single-crystal substrate
- Patent number 9,318,563
- Issue date Apr 19, 2016
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- B24 - GRINDING POLISHING
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 9,312,340
- Issue date Apr 12, 2016
- Sumitomo Electric Industries, Ltd
- Makoto Kiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 9,312,165
- Issue date Apr 12, 2016
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III nitride semiconductor substrate, epitaxial substrate, and semic...
- Patent number 9,299,890
- Issue date Mar 29, 2016
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate, semiconductor device, and methods for ma...
- Patent number 9,184,246
- Issue date Nov 10, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 9,136,337
- Issue date Sep 15, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate, semiconductor device, and method of manufacturing the same
- Patent number 9,117,758
- Issue date Aug 25, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon carbide substrate, semiconductor device, and methods for ma...
- Patent number 9,105,756
- Issue date Aug 11, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate, semiconductor device, and method of manufacturing the same
- Patent number 9,093,384
- Issue date Jul 28, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
III nitride semiconductor substrate, epitaxial substrate, and semic...
- Patent number 9,070,828
- Issue date Jun 30, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group III nitride crystal substrate
- Patent number 9,035,429
- Issue date May 19, 2015
- Sumitomo Electric Industries, Ltd.
- Takayuki Nishiura
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Silicon carbide single-crystal substrate and method for manufacturi...
- Patent number 8,975,643
- Issue date Mar 10, 2015
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- B24 - GRINDING POLISHING
Information Patent Grant
Group III nitride semiconductor substrate having a sulfide in a sur...
- Patent number 8,952,494
- Issue date Feb 10, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate, semiconductor device, and method of manufacturing the same
- Patent number 8,872,189
- Issue date Oct 28, 2014
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
HEAT SHRINKABLE TUBE, HEAT SHRINKABLE COUPLING COMPONENT, METHOD OF...
- Publication number 20240106221
- Publication date Mar 28, 2024
- SUMITOMO ELECTRIC FINE POLYMER, INC.
- Keiji ISHIBASHI
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20200176305
- Publication date Jun 4, 2020
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20180166325
- Publication date Jun 14, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING GROUP III...
- Publication number 20170283988
- Publication date Oct 5, 2017
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...
- Publication number 20170115239
- Publication date Apr 27, 2017
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHODS FOR MA...
- Publication number 20160359007
- Publication date Dec 8, 2016
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MA...
- Publication number 20160343808
- Publication date Nov 24, 2016
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20160190001
- Publication date Jun 30, 2016
- Sumitomo Electric Industries, Ltd.
- Akihiro HACHIGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MA...
- Publication number 20160020281
- Publication date Jan 21, 2016
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20150380496
- Publication date Dec 31, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20150349063
- Publication date Dec 3, 2015
- Sumitomo Electric Industries, Ltd.
- Makoto KIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME
- Publication number 20150325637
- Publication date Nov 12, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHODS FOR MA...
- Publication number 20150295050
- Publication date Oct 15, 2015
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE
- Publication number 20150221729
- Publication date Aug 6, 2015
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20150194442
- Publication date Jul 9, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE
- Publication number 20150162409
- Publication date Jun 11, 2015
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III NITRIDE SEMICONDUCTOR SUBSTRATE, EPITAXIAL SUBSTRATE, AND SEMIC...
- Publication number 20150137319
- Publication date May 21, 2015
- SUMITOMO ELECTRIC INDUSTIES, LTD.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME
- Publication number 20150008454
- Publication date Jan 8, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME
- Publication number 20150008453
- Publication date Jan 8, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III NITRIDE SEMICONDUCTOR SUBSTRATE, EPITAXIAL SUBSTRATE, AND SEMIC...
- Publication number 20140367735
- Publication date Dec 18, 2014
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...
- Publication number 20140349112
- Publication date Nov 27, 2014
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING GROUP III...
- Publication number 20140291811
- Publication date Oct 2, 2014
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20140225229
- Publication date Aug 14, 2014
- Sumitomo Electric Industries, Ltd.
- Akihiro HACHIGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SURFACE TREATMENT OF GROUP III NITRIDE CRYSTAL FILM, GROU...
- Publication number 20140124826
- Publication date May 8, 2014
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20140103353
- Publication date Apr 17, 2014
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURI...
- Publication number 20140073228
- Publication date Mar 13, 2014
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...
- Publication number 20130292802
- Publication date Nov 7, 2013
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURI...
- Publication number 20130264584
- Publication date Oct 10, 2013
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MA...
- Publication number 20130256700
- Publication date Oct 3, 2013
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SUBSTRATE, SEMICONDUCTOR DEVICE COMPRISING THE SA...
- Publication number 20130249060
- Publication date Sep 26, 2013
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH

Keiji ISHIBASHI

Person

Patents Grantslast 30 patents

Group III nitride composite substrate and method for manufacturing...

Group III nitride composite substrate and method for manufacturing...

Group III nitride composite substrate and method for manufacturing...

Group III nitride crystal substrate, epilayer-containing group III...

Nitride crystal, nitride crystal substrate, epilayer-containing nit...

Group III nitride composite substrate and method for manufacturing...

Group III nitride composite substrate and method for manufacturing...

Silicon carbide substrate, semiconductor device and methods for man...

Silicon carbide substrate, semiconductor device, and methods for ma...

Group III nitride crystal substrate, epilayer-containing group III...

Nitride crystal, nitride crystal substrate, epilayer-containing nit...

Group III nitride crystal substrate, epilayer-containing group III...

Substrate, semiconductor device, and method of manufacturing the same

Silicon carbide substrate, semiconductor device and methods for man...

Silicon carbide substrate, semiconductor device, and methods for ma...

Silicon carbide single-crystal substrate

Silicon carbide single-crystal substrate

Group III nitride composite substrate and method for manufacturing...

Group III nitride composite substrate and method for manufacturing...

III nitride semiconductor substrate, epitaxial substrate, and semic...

Silicon carbide substrate, semiconductor device, and methods for ma...

Group III nitride composite substrate and method for manufacturing...

Substrate, semiconductor device, and method of manufacturing the same

Silicon carbide substrate, semiconductor device, and methods for ma...

Substrate, semiconductor device, and method of manufacturing the same

III nitride semiconductor substrate, epitaxial substrate, and semic...

Group III nitride crystal substrate

Silicon carbide single-crystal substrate and method for manufacturi...

Group III nitride semiconductor substrate having a sulfide in a sur...

Substrate, semiconductor device, and method of manufacturing the same

Patents Applicationslast 30 patents

HEAT SHRINKABLE TUBE, HEAT SHRINKABLE COUPLING COMPONENT, METHOD OF...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GROUP III NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING GROUP III...

NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...

SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHODS FOR MA...

SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MA...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MA...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHODS FOR MA...

SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE

III NITRIDE SEMICONDUCTOR SUBSTRATE, EPITAXIAL SUBSTRATE, AND SEMIC...

SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

III NITRIDE SEMICONDUCTOR SUBSTRATE, EPITAXIAL SUBSTRATE, AND SEMIC...

NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...

GROUP III NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING GROUP III...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

METHOD OF SURFACE TREATMENT OF GROUP III NITRIDE CRYSTAL FILM, GROU...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURI...

NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...

SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURI...

SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MA...

GROUP III NITRIDE SUBSTRATE, SEMICONDUCTOR DEVICE COMPRISING THE SA...