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Keiko MASUMOTO
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Tsukuba-shi, Ibaraki, JP
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Patents Grants
last 30 patents
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Patent Grant
Silicon carbide epitaxial wafer having a thick silicon carbide laye...
Patent number
10,879,359
Issue date
Dec 29, 2020
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Keiko Masumoto
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Silicon carbide epitaxial wafer and process for producing same
Patent number
10,329,689
Issue date
Jun 25, 2019
National Institute of Advanced Industrial Science and Technology
Keiko Masumoto
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Silicon carbide epitaxial wafer, method for manufacturing silicon c...
Patent number
9,587,326
Issue date
Mar 7, 2017
National Institute of Advanced Industrial Science and Technology
Keiko Masumoto
C30 - CRYSTAL GROWTH
Patents Applications
last 30 patents
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Patent Application
SILICON CARBIDE EPITAXIAL WAFER AND SILICON CARBIDE SEMICONDUCTOR D...
Publication number
20190333998
Publication date
Oct 31, 2019
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Keiko MASUMOTO
C30 - CRYSTAL GROWTH
Information
Patent Application
SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREOF
Publication number
20190273136
Publication date
Sep 5, 2019
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Keiko MASUMOTO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Silicon Carbide Epitaxial Wafer and Process for Producing Same
Publication number
20170037538
Publication date
Feb 9, 2017
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Keiko Masumoto
C30 - CRYSTAL GROWTH
Information
Patent Application
Silicon Carbide Epitaxial Wafer, Method for Manufacturing Silicon C...
Publication number
20160168751
Publication date
Jun 16, 2016
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Keiko MASUMOTO
C30 - CRYSTAL GROWTH