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Keisei Abe
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Tokyo, JP
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Patents Grants
last 30 patents
Information
Patent Grant
Method for producing silicon single crystal and silicon single crystal
Patent number
7,456,082
Issue date
Nov 25, 2008
Sumco Corporation
Keisei Abe
C30 - CRYSTAL GROWTH
Information
Patent Grant
Semiconductor single-crystal growth system
Patent number
6,261,364
Issue date
Jul 17, 2001
Mitsubishi Materials Corporation
Yoshiaki Arai
C30 - CRYSTAL GROWTH
Information
Patent Grant
Silicon crystal, and device and method for manufacturing same
Patent number
6,096,128
Issue date
Aug 1, 2000
Toshiba Ceramics Co., Ltd.
Hideo Nakanishi
C30 - CRYSTAL GROWTH
Information
Patent Grant
Detecting method of impurity concentration in crystal, method for p...
Patent number
6,019,837
Issue date
Feb 1, 2000
Komatsu Electronic Metals Co., Ltd.
Susumu Maeda
C30 - CRYSTAL GROWTH
Information
Patent Grant
Detecting method of impurity concentration in crystal, method for p...
Patent number
6,004,393
Issue date
Dec 21, 1999
Komatsu Electronic Metals Co., Ltd.
Susumu Maeda
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for growing a semiconductor single-crystal
Patent number
5,858,085
Issue date
Jan 12, 1999
Mitsubishi Materials Corporation
Yoshiaki Arai
C30 - CRYSTAL GROWTH
Information
Patent Grant
Semiconductor single-crystal growth system
Patent number
5,720,810
Issue date
Feb 24, 1998
Mitsubishi Materials Corporation
Yoshiaki Arai
C30 - CRYSTAL GROWTH
Information
Patent Grant
Double crucible for growing a silicon single crystal
Patent number
5,474,022
Issue date
Dec 12, 1995
Mitsubishi Materials Corporation
Keisei Abe
C30 - CRYSTAL GROWTH
Patents Applications
last 30 patents
Information
Patent Application
Method for producing silicon single crystal and silicon single crystal
Publication number
20070028833
Publication date
Feb 8, 2007
Keisei Abe
C30 - CRYSTAL GROWTH