Keisuke Shinohara

Person

Thousand Oaks, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Laterally-gated transistors and lateral Schottky diodes with integr...
- Patent number 11,967,619
- Issue date Apr 23, 2024
- Teledyne Scientific & Imaging, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic contact for multiple channel FET
- Patent number 11,605,722
- Issue date Mar 14, 2023
- Teledyne Scientific & Imaging, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT GaN device with a non-uniform lateral two dimensional electron...
- Patent number 10,700,201
- Issue date Jun 30, 2020
- HRL Laboratories, LLC
- Sameh G. Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of group III nitride epitaxial layers
- Patent number 10,418,473
- Issue date Sep 17, 2019
- HRL Laboratories, LLC
- David F. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET with buried gate structure
- Patent number 10,388,746
- Issue date Aug 20, 2019
- Teledyne Scientific & Imaging, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET with micro-scale device array
- Patent number 10,249,711
- Issue date Apr 2, 2019
- Teledyne Scientific & Imaging, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of microfluidic channels in diamond
- Patent number 10,217,648
- Issue date Feb 26, 2019
- HRL Laboratories, LLC
- David F. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT GaN device with a non-uniform lateral two dimensional electron...
- Patent number 10,192,986
- Issue date Jan 29, 2019
- HRL Laboratories, LLC
- Sameh Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
T-gate field effect transistor with non-linear channel layer and/or...
- Patent number 10,170,611
- Issue date Jan 1, 2019
- HRL Laboratories, LLC
- Yan Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flexible electronic circuit and method for manufacturing same
- Patent number 10,056,340
- Issue date Aug 21, 2018
- HRL Laboratories, LLC
- Hasan Sharifi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of group III nitride epitaxial layers
- Patent number 9,954,090
- Issue date Apr 24, 2018
- HRL Laboratories, LLC
- David F. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stepped field plate wide bandgap field-effect transistor and method
- Patent number 9,929,243
- Issue date Mar 27, 2018
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of GaN and InP components
- Patent number 9,691,761
- Issue date Jun 27, 2017
- HRL Laboratories, LLC
- Pamela R. Patterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flexible electronic circuit and method for manufacturing same
- Patent number 9,530,708
- Issue date Dec 27, 2016
- HRL Laboratories, LLC
- Hasan Sharifi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of GaN and InP components
- Patent number 9,515,068
- Issue date Dec 6, 2016
- HRL Laboratories, LLC
- Pamela R. Patterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated self-aligned GaN-HEMTs and schottky diode...
- Patent number 9,515,161
- Issue date Dec 6, 2016
- HRL Laboratories, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Near junction cooling for GaN devices
- Patent number 9,496,197
- Issue date Nov 15, 2016
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating self-aligned FETS using multiple sidewall sp...
- Patent number 9,449,833
- Issue date Sep 20, 2016
- HRL Laboratories, LLC
- Dean C. Regan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch-based fabrication process for stepped field-plate wide-bandgap
- Patent number 9,419,122
- Issue date Aug 16, 2016
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of group III nitride epitaxial layers
- Patent number 9,378,949
- Issue date Jun 28, 2016
- HRL Laboratories, LLC
- David F. Brown
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
HEMT GaN device with a non-uniform lateral two dimensional electron...
- Patent number 9,379,195
- Issue date Jun 28, 2016
- HRL Laboratories, LLC
- Sameh G. Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for reducing the interface resistance in GaN H...
- Patent number 9,252,247
- Issue date Feb 2, 2016
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System for self-aligned contacts
- Patent number 9,202,704
- Issue date Dec 1, 2015
- Teledyne Scientific & Imaging, LLC
- Miguel Urteaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch-based fabrication process for stepped field-plate wide-bandgap
- Patent number 9,202,880
- Issue date Dec 1, 2015
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stepped field plate wide bandgap field-effect transistor and method
- Patent number 9,142,626
- Issue date Sep 22, 2015
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for encapsulation and interconnection of trans...
- Patent number 9,093,394
- Issue date Jul 28, 2015
- HRL Laboratories, LLC
- Alexandros Margomenos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating slanted field-plate GaN heterojunction field-...
- Patent number 8,980,759
- Issue date Mar 17, 2015
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated self-aligned GaN-HEMTs and Schottky diode...
- Patent number 8,946,724
- Issue date Feb 3, 2015
- HRL Laboratories, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of group III nitride epitaxial layers
- Patent number 8,796,736
- Issue date Aug 5, 2014
- HRL Laboratories, LLC
- David F. Brown
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Self-aligned sidewall gate GaN HEMT
- Patent number 8,766,321
- Issue date Jul 1, 2014
- HRL Laboratories, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RECESSED-GATE HIGH-ELECTRON-MOBILITY TRANSISTORS WITH DOPED BARRIER...
- Publication number 20240379834
- Publication date Nov 14, 2024
- TELEDYNE SCIENTIFIC & IMAGING, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY-GATED TRANSISTORS AND LATERAL SCHOTTKY DIODES WITH INTEGR...
- Publication number 20240258384
- Publication date Aug 1, 2024
- TELEDYNE SCIENTIFIC & IMAGING, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH LINEARITY FET WITH BURIED GATE STRUCTURES AND TAPERED CHANNEL...
- Publication number 20230411505
- Publication date Dec 21, 2023
- TELEDYNE SCIENTIFIC & IMAGING, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY-GATED TRANSISTORS AND LATERAL SCHOTTKY DIODES WITH INTEGR...
- Publication number 20220085176
- Publication date Mar 17, 2022
- TELEDYNE SCIENTIFIC & IMAGING, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OHMIC CONTACT FOR MULTIPLE CHANNEL FET
- Publication number 20210359097
- Publication date Nov 18, 2021
- TELEDYNE SCIENTIFIC & IMAGING, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET WITH BURIED GATE STRUCTURE
- Publication number 20190013386
- Publication date Jan 10, 2019
- TELEDYNE SCIENTIFIC & IMAGING, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET WITH MICRO-SCALE DEVICE ARRAY
- Publication number 20190006464
- Publication date Jan 3, 2019
- TELEDYNE SCIENTIFIC & IMAGING, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT GaN DEVICE WITH A NON-UNIFORM LATERAL TWO DIMENSIONAL ELECTRON...
- Publication number 20180374952
- Publication date Dec 27, 2018
- HRL LABORATORIES, LLC
- Sameh G. Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System for Self-Aligned Contacts
- Publication number 20140213052
- Publication date Jul 31, 2014
- Miguel Urteaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT GaN DEVICE WITH A NON-UNIFORM LATERAL TWO DIMENSIONAL ELECTRON...
- Publication number 20130313612
- Publication date Nov 28, 2013
- HRL LABORATORIES, LLC
- Sameh Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF INTEGRATING A PLURALITY OF BENZOCYCLOBUTENE LAYERS WITH A...
- Publication number 20130140579
- Publication date Jun 6, 2013
- The Boeing Company
- Hasan Sharifi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SIDEWALL GATE GaN HEMT
- Publication number 20130119400
- Publication date May 16, 2013
- HRL Laboratories
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System for Self-Aligned Contacts
- Publication number 20130032927
- Publication date Feb 7, 2013
- Miguel Urteaga
- H01 - BASIC ELECTRIC ELEMENTS

Keisuke Shinohara

Person

Patents Grantslast 30 patents

Laterally-gated transistors and lateral Schottky diodes with integr...

Ohmic contact for multiple channel FET

HEMT GaN device with a non-uniform lateral two dimensional electron...

Monolithic integration of group III nitride epitaxial layers

FET with buried gate structure

FET with micro-scale device array

Fabrication of microfluidic channels in diamond

HEMT GaN device with a non-uniform lateral two dimensional electron...

T-gate field effect transistor with non-linear channel layer and/or...

Flexible electronic circuit and method for manufacturing same

Monolithic integration of group III nitride epitaxial layers

Stepped field plate wide bandgap field-effect transistor and method

Monolithic integration of GaN and InP components

Flexible electronic circuit and method for manufacturing same

Monolithic integration of GaN and InP components

Monolithically integrated self-aligned GaN-HEMTs and schottky diode...

Near junction cooling for GaN devices

Methods of fabricating self-aligned FETS using multiple sidewall sp...

Etch-based fabrication process for stepped field-plate wide-bandgap

Monolithic integration of group III nitride epitaxial layers

HEMT GaN device with a non-uniform lateral two dimensional electron...

Apparatus and method for reducing the interface resistance in GaN H...

System for self-aligned contacts

Etch-based fabrication process for stepped field-plate wide-bandgap

Stepped field plate wide bandgap field-effect transistor and method

Method and structure for encapsulation and interconnection of trans...

Method of fabricating slanted field-plate GaN heterojunction field-...

Monolithically integrated self-aligned GaN-HEMTs and Schottky diode...

Monolithic integration of group III nitride epitaxial layers

Self-aligned sidewall gate GaN HEMT

Patents Applicationslast 30 patents

RECESSED-GATE HIGH-ELECTRON-MOBILITY TRANSISTORS WITH DOPED BARRIER...

LATERALLY-GATED TRANSISTORS AND LATERAL SCHOTTKY DIODES WITH INTEGR...

HIGH LINEARITY FET WITH BURIED GATE STRUCTURES AND TAPERED CHANNEL...

LATERALLY-GATED TRANSISTORS AND LATERAL SCHOTTKY DIODES WITH INTEGR...

OHMIC CONTACT FOR MULTIPLE CHANNEL FET

FET WITH BURIED GATE STRUCTURE

FET WITH MICRO-SCALE DEVICE ARRAY

HEMT GaN DEVICE WITH A NON-UNIFORM LATERAL TWO DIMENSIONAL ELECTRON...

System for Self-Aligned Contacts

HEMT GaN DEVICE WITH A NON-UNIFORM LATERAL TWO DIMENSIONAL ELECTRON...

METHOD OF INTEGRATING A PLURALITY OF BENZOCYCLOBUTENE LAYERS WITH A...

SELF-ALIGNED SIDEWALL GATE GaN HEMT

System for Self-Aligned Contacts