Keisuke TANIZAKI

Person

Itami-shi, Hyogo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
GaAs crystal
- Patent number 10,829,867
- Issue date Nov 10, 2020
- Sumitomo Electric Industries, Ltd.
- Keisuke Tanizaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaAs crystal
- Patent number 10,301,744
- Issue date May 28, 2019
- Sumitomo Electric Industries, Ltd.
- Keisuke Tanizaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Composite of III-nitride crystal on laterally stacked substrates
- Patent number 9,064,706
- Issue date Jun 23, 2015
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Composite of III-nitride crystal on laterally stacked substrates
- Patent number 8,872,309
- Issue date Oct 28, 2014
- Sumitomo Electronic Industries, Ltd.
- Naho Mizuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing III-nitride crystal
- Patent number 8,709,923
- Issue date Apr 29, 2014
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Compound semiconductor single-crystal manufacturing device and manu...
- Patent number 8,591,653
- Issue date Nov 26, 2013
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group-III nitride crystal composite
- Patent number 8,404,042
- Issue date Mar 26, 2013
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Thin film of aluminum nitride and process for producing the thin fi...
- Patent number 8,367,577
- Issue date Feb 5, 2013
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
AlxGa(1-x)N single crystal, method of producing AlxGa(1-x)N single...
- Patent number 8,363,326
- Issue date Jan 29, 2013
- Sumitomo Electric Industries, Ltd.
- Satoshi Arakawa
- G02 - OPTICS
Information Patent Grant
Method for growing aluminum nitride crystal, process for producing...
- Patent number 8,323,402
- Issue date Dec 4, 2012
- Sumitomo Electric Industries, Ltd.
- Keisuke Tanizaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing group III nitride semiconductor crystal and grow...
- Patent number 8,293,011
- Issue date Oct 23, 2012
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing III-nitride crystal, and semiconductor devi...
- Patent number 8,258,051
- Issue date Sep 4, 2012
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Diamond substrate and manufacturing method thereof
- Patent number 7,390,695
- Issue date Jun 24, 2008
- Sumitomo Electric Industries, Ltd.
- Kiichi Meguro
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GaAs CRYSTAL
- Publication number 20190226119
- Publication date Jul 25, 2019
- Sumitomo Electric Industries, Ltd.
- Keisuke TANIZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaAs CRYSTAL
- Publication number 20170137967
- Publication date May 18, 2017
- Sumitomo Electric Industries, Ltd.
- Keisuke TANIZAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
Composite of III-Nitride Crystal on Laterally Stacked Substrates
- Publication number 20150008563
- Publication date Jan 8, 2015
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite of III-Nitride Crystal on Laterally Stacked Substrates
- Publication number 20140175616
- Publication date Jun 26, 2014
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Manufacturing III-Nitride Crystal
- Publication number 20130160699
- Publication date Jun 27, 2013
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Application
Group-III Nitride Crystal Composite
- Publication number 20120315445
- Publication date Dec 13, 2012
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Application
AlGaN BULK CRYSTAL MANUFACTURING METHOD AND AlGaN SUBSTRATE MANUFAC...
- Publication number 20110114016
- Publication date May 19, 2011
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III-NITRIDE CRYSTAL AND GROUP III-NITRID...
- Publication number 20110110840
- Publication date May 12, 2011
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- C30 - CRYSTAL GROWTH
Information Patent Application
AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE...
- Publication number 20110109973
- Publication date May 12, 2011
- Sumitomo Electric Industries, Ltd.
- Satoshi Arakawa
- C30 - CRYSTAL GROWTH
Information Patent Application
AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE...
- Publication number 20110104438
- Publication date May 5, 2011
- Sumitomo Electric Industries, Ltd.
- Satoshi Arakawa
- C30 - CRYSTAL GROWTH
Information Patent Application
AlxGa1-xN Single Crystal and Electromagnetic Wave Transmission Body
- Publication number 20110076453
- Publication date Mar 31, 2011
- Sumitomo Electric Industries, Ltd.
- Satoshi Arakawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Growing AlN Crystals, and AlN Laminate
- Publication number 20110042684
- Publication date Feb 24, 2011
- Sumitomo Electric Industries, Ltd.
- Keisuke Tanizaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Compound Semiconductor Single-Crystal Manufacturing Device and Manu...
- Publication number 20100319614
- Publication date Dec 23, 2010
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Growing AlxGa1-xN Single Crystal
- Publication number 20100307405
- Publication date Dec 9, 2010
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- C30 - CRYSTAL GROWTH
Information Patent Application
AlN Crystal and Method of Its Growth
- Publication number 20100242833
- Publication date Sep 30, 2010
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
Thin Film of Aluminum Nitride and Process for Producing the Thin Fi...
- Publication number 20100209622
- Publication date Aug 19, 2010
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Growing Aluminum Nitride Crystal, Process for Producing...
- Publication number 20100143748
- Publication date Jun 10, 2010
- Sumitomo Electric Industries, Ltd.
- Keisuke Tanizaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Manufacturing III-Nitride Crystal, and Semiconductor Devi...
- Publication number 20090236694
- Publication date Sep 24, 2009
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL AND GROW...
- Publication number 20090158994
- Publication date Jun 25, 2009
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- C30 - CRYSTAL GROWTH
Information Patent Application
Diamond substrate and manufacturing method thereof
- Publication number 20060213428
- Publication date Sep 28, 2006
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Kiichi Meguro
- C30 - CRYSTAL GROWTH

Keisuke TANIZAKI

Person

Patents Grantslast 30 patents

GaAs crystal

GaAs crystal

Composite of III-nitride crystal on laterally stacked substrates

Composite of III-nitride crystal on laterally stacked substrates

Method of manufacturing III-nitride crystal

Compound semiconductor single-crystal manufacturing device and manu...

Group-III nitride crystal composite

Thin film of aluminum nitride and process for producing the thin fi...

AlxGa(1-x)N single crystal, method of producing AlxGa(1-x)N single...

Method for growing aluminum nitride crystal, process for producing...

Method for growing group III nitride semiconductor crystal and grow...

Method of manufacturing III-nitride crystal, and semiconductor devi...

Diamond substrate and manufacturing method thereof

Patents Applicationslast 30 patents

GaAs CRYSTAL

GaAs CRYSTAL

Composite of III-Nitride Crystal on Laterally Stacked Substrates

Composite of III-Nitride Crystal on Laterally Stacked Substrates

Method of Manufacturing III-Nitride Crystal

Group-III Nitride Crystal Composite

AlGaN BULK CRYSTAL MANUFACTURING METHOD AND AlGaN SUBSTRATE MANUFAC...

METHOD FOR PRODUCING GROUP III-NITRIDE CRYSTAL AND GROUP III-NITRID...

AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE...

AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE...

AlxGa1-xN Single Crystal and Electromagnetic Wave Transmission Body

Method of Growing AlN Crystals, and AlN Laminate

Compound Semiconductor Single-Crystal Manufacturing Device and Manu...

Method for Growing AlxGa1-xN Single Crystal

AlN Crystal and Method of Its Growth

Thin Film of Aluminum Nitride and Process for Producing the Thin Fi...

Method for Growing Aluminum Nitride Crystal, Process for Producing...

Method of Manufacturing III-Nitride Crystal, and Semiconductor Devi...

METHOD FOR GROWING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL AND GROW...

Diamond substrate and manufacturing method thereof