Keita Nii

Person

Kyoto, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide thin film circuit element and method of manufacturi...
- Patent number 5,516,589
- Issue date May 14, 1996
- Rohm Co., Ltd.
- Keita Nii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero junction bipolar transistor
- Patent number 5,473,172
- Issue date Dec 5, 1995
- Rohm Co., Ltd.
- Keita Nii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor and method for producing the same
- Patent number 5,378,901
- Issue date Jan 3, 1995
- Rohm, Co., Ltd.
- Keita Nii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a hetero-junction bi-polar transistor
- Patent number 5,350,699
- Issue date Sep 27, 1994
- Rohm Co., Ltd.
- Keita Nii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin silicon carbide layer on an insulating layer
- Patent number 5,341,000
- Issue date Aug 23, 1994
- Rohm Co., Ltd.
- Keita Nii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid state imaging device having silicon carbide crystal layer
- Patent number 5,289,017
- Issue date Feb 22, 1994
- Rohm Co., Ltd.
- Keita Nii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor apparatus
- Patent number 5,279,888
- Issue date Jan 18, 1994
- Rohm Co., Ltd.
- Keita Nii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 5,247,192
- Issue date Sep 21, 1993
- Rohm Co., Ltd.
- Keita Nii
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Silicon carbide thin film circuit element and method of manufacturi...

Hetero junction bipolar transistor

Heterojunction bipolar transistor and method for producing the same

Method of manufacturing a hetero-junction bi-polar transistor

Thin silicon carbide layer on an insulating layer

Solid state imaging device having silicon carbide crystal layer

Silicon carbide semiconductor apparatus

Heterojunction bipolar transistor