Keizo Tani

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having darlington-connected transistor circuit
- Patent number 4,769,560
- Issue date Sep 6, 1988
- Kabushiki Kaisha Toshiba
- Keizo Tani
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method of producing a semiconductor device
- Patent number 4,558,510
- Issue date Dec 17, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Keizo Tani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with glass layer contacting outer periphery of...
- Patent number 4,400,716
- Issue date Aug 23, 1983
- Tokyo Shibaura Denki Kabushiki Kaisha
- Keizo Tani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction type field effect transistor with source at oxide-gate int...
- Patent number 4,284,998
- Issue date Aug 18, 1981
- Tokyo Shibaura Electric Co., Ltd.
- Noboru Fuse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,267,557
- Issue date May 12, 1981
- Tokyo Shibaura Denki Kabushiki Kaisha
- Ken-ichi Muramoto
- H01 - BASIC ELECTRIC ELEMENTS