Kelly P. Ip

Person

Lowell, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Group III-V semiconductor structures having crystalline regrowth la...
- Patent number 11,784,248
- Issue date Oct 10, 2023
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V semiconductor structures having crystalline regrowth la...
- Patent number 11,515,410
- Issue date Nov 29, 2022
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having improved gate structures
- Patent number 11,476,154
- Issue date Oct 18, 2022
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode structure for field effect transistor
- Patent number 11,239,326
- Issue date Feb 1, 2022
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride structures having low capacitance gate contacts integrated...
- Patent number 11,177,216
- Issue date Nov 16, 2021
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride structure having gold-free contact and methods for forming...
- Patent number 10,224,285
- Issue date Mar 5, 2019
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride structure having gold-free contact and methods for forming...
- Patent number 10,096,550
- Issue date Oct 9, 2018
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and structures for forming microstrip transmission lines on...
- Patent number 9,761,445
- Issue date Sep 12, 2017
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microwave integrated circuit (MMIC) damascene electrical interconne...
- Patent number 9,478,508
- Issue date Oct 25, 2016
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with layers having different hydrogen contents
- Patent number 9,293,379
- Issue date Mar 22, 2016
- Raytheon Company
- Eduardo M. Chumbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon based opto-electric circuits
- Patent number 8,853,745
- Issue date Oct 7, 2014
- Raytheon Company
- Kamal Tabatabaie
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LA...
- Publication number 20230073459
- Publication date Mar 9, 2023
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LA...
- Publication number 20220140126
- Publication date May 5, 2022
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR HAVING IMPROVED GATE STRUCTURES
- Publication number 20210098285
- Publication date Apr 1, 2021
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE STRUCTURES HAVING LOW CAPACITANCE GATE CONTACTS INTEGRATED...
- Publication number 20200083167
- Publication date Mar 12, 2020
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODE STRUCTURE FOR FIELD EFFECT TRANSISTOR
- Publication number 20190237554
- Publication date Aug 1, 2019
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODE STRUCTURE FOR FIELD EFFECT TRANSISTOR
- Publication number 20190097001
- Publication date Mar 28, 2019
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING...
- Publication number 20180240753
- Publication date Aug 23, 2018
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING...
- Publication number 20180240754
- Publication date Aug 23, 2018
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES FOR FORMING MICROSTRIP TRANSMISSION LINES ON...
- Publication number 20160211136
- Publication date Jul 21, 2016
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR REDUCING THE PROPAGATION OF CRACKS IN EPIT...
- Publication number 20150084057
- Publication date Mar 26, 2015
- Raytheon Company
- Kelly P. Ip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD
- Publication number 20110049581
- Publication date Mar 3, 2011
- Raytheon Company
- Eduardo M. Chumbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON BASED OPTO-ELECTRIC CIRCUITS
- Publication number 20100181601
- Publication date Jul 22, 2010
- Kamal Tabatabaie
- H01 - BASIC ELECTRIC ELEMENTS

Kelly P. Ip

Person

Patents Grantslast 30 patents

Group III-V semiconductor structures having crystalline regrowth la...

Group III-V semiconductor structures having crystalline regrowth la...

Field effect transistor having improved gate structures

Electrode structure for field effect transistor

Nitride structures having low capacitance gate contacts integrated...

Nitride structure having gold-free contact and methods for forming...

Nitride structure having gold-free contact and methods for forming...

Methods and structures for forming microstrip transmission lines on...

Microwave integrated circuit (MMIC) damascene electrical interconne...

Semiconductor structure with layers having different hydrogen contents

Silicon based opto-electric circuits

Patents Applicationslast 30 patents

GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LA...

GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LA...

FIELD EFFECT TRANSISTOR HAVING IMPROVED GATE STRUCTURES

NITRIDE STRUCTURES HAVING LOW CAPACITANCE GATE CONTACTS INTEGRATED...

ELECTRODE STRUCTURE FOR FIELD EFFECT TRANSISTOR

ELECTRODE STRUCTURE FOR FIELD EFFECT TRANSISTOR

NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING...

NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING...

METHODS AND STRUCTURES FOR FORMING MICROSTRIP TRANSMISSION LINES ON...

METHOD AND STRUCTURE FOR REDUCING THE PROPAGATION OF CRACKS IN EPIT...

SEMICONDUCTOR STRUCTURE AND METHOD

SILICON BASED OPTO-ELECTRIC CIRCUITS