Ken Au

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming ono stacked films and DCS tungsten silicide gate...
- Patent number 6,380,029
- Issue date Apr 30, 2002
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitridation process for fabricating an ONO floating-gate electrode...
- Patent number 6,319,775
- Issue date Nov 20, 2001
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high K tantalum pentoxide Ta2O5 instead of ONO st...
- Patent number 6,309,927
- Issue date Oct 30, 2001
- Advanced Micro Devices, Inc.
- Kenneth Wo-Wai Au
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing process to eliminate ONO fence material in high densi...
- Patent number 6,281,078
- Issue date Aug 28, 2001
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and arrangements for forming a floating gate in non-volatil...
- Patent number 6,274,433
- Issue date Aug 14, 2001
- Advanced Micro Devices, Inc.
- Mark Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High temperature oxide deposition process for fabricating an ONO fl...
- Patent number 6,265,268
- Issue date Jul 24, 2001
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an ONO dielectric by nitridation for MNOS mem...
- Patent number 6,248,628
- Issue date Jun 19, 2001
- Advanced Micro Devices
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin floating gate and conductive select gate in situ doped amorpho...
- Patent number 6,235,586
- Issue date May 22, 2001
- Advanced Micro Devices, Inc.
- Kenneth Wo-Wai Au
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light floating gate doping to improve tunnel oxide reliability
- Patent number 6,232,630
- Issue date May 15, 2001
- Advanced Micro Devices, Inc.
- Mark T. Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for providing a dopant level for polysilicon for flash memor...
- Patent number 6,218,689
- Issue date Apr 17, 2001
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of using source/drain nitride for periphery field oxide and...
- Patent number 6,207,502
- Issue date Mar 27, 2001
- Advanced Micro Devices, Inc.
- Kenneth Au
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming select gate to improve reliability and performanc...
- Patent number 6,204,159
- Issue date Mar 20, 2001
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating an ONO floating-gate electrode in a two-bit...
- Patent number 6,180,538
- Issue date Jan 30, 2001
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ P doped amorphous silicon by NH3 to form oxidation resistan...
- Patent number 6,140,246
- Issue date Oct 31, 2000
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated method by using high temperature oxide for top oxide and...
- Patent number 6,117,730
- Issue date Sep 12, 2000
- Advanced Micro Devices, Inc.
- Hideki Komori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and arrangements for forming a floating gate in non-volatil...
- Patent number 6,034,394
- Issue date Mar 7, 2000
- Advanced Micro Devices, Inc.
- Mark Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing process to eliminate polystringers in high density na...
- Patent number 5,994,239
- Issue date Nov 30, 1999
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method of forming ono stacked films and DCS tungsten silicide gate...

Nitridation process for fabricating an ONO floating-gate electrode...

Method of forming high K tantalum pentoxide Ta2O5 instead of ONO st...

Manufacturing process to eliminate ONO fence material in high densi...

Methods and arrangements for forming a floating gate in non-volatil...

High temperature oxide deposition process for fabricating an ONO fl...

Method of fabricating an ONO dielectric by nitridation for MNOS mem...

Thin floating gate and conductive select gate in situ doped amorpho...

Light floating gate doping to improve tunnel oxide reliability

Method for providing a dopant level for polysilicon for flash memor...

Method of using source/drain nitride for periphery field oxide and...

Method of forming select gate to improve reliability and performanc...

Process for fabricating an ONO floating-gate electrode in a two-bit...

In-situ P doped amorphous silicon by NH3 to form oxidation resistan...

Integrated method by using high temperature oxide for top oxide and...

Methods and arrangements for forming a floating gate in non-volatil...

Manufacturing process to eliminate polystringers in high density na...