Ken GOTO

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for growing beta-Ga2O3-based single crystal film, and crysta...
- Patent number 11,982,016
- Issue date May 14, 2024
- Tamura Corporation
- Ken Goto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor substrate, and epitaxial wafer and method for produci...
- Patent number 10,985,016
- Issue date Apr 20, 2021
- Tamura Corporation
- Ken Goto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor element and crystalline laminate structure
- Patent number 10,861,945
- Issue date Dec 8, 2020
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, epitaxial wafer, and method for manufactur...
- Patent number 10,676,841
- Issue date Jun 9, 2020
- Tamura Corporation
- Ken Goto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Crystal laminate structure
- Patent number 10,538,862
- Issue date Jan 21, 2020
- Tamura Corporation
- Ken Goto
- C30 - CRYSTAL GROWTH
Information Patent Grant
High voltage withstand Ga2O3-based single crystal schottky barrier...
- Patent number 10,199,512
- Issue date Feb 5, 2019
- Tamura Corporation
- Kohei Sasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR GROWING BETA-GA2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTA...
- Publication number 20210404086
- Publication date Dec 30, 2021
- TAMURA CORPORATION
- Ken GOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, AND EPITAXIAL WAFER AND METHOD FOR PRODUCI...
- Publication number 20200243332
- Publication date Jul 30, 2020
- TAMURA CORPORATION
- Ken GOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL LAMINATE STRUCTURE
- Publication number 20200102667
- Publication date Apr 2, 2020
- TAMURA CORPORATION
- Ken GOTO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HIGH WITHSTAND VOLTAGE SCHOTTKY BARRIER DIODE
- Publication number 20180254355
- Publication date Sep 6, 2018
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL LAMINATE STRUCTURE
- Publication number 20180073164
- Publication date Mar 15, 2018
- TAMURA CORPORATION
- Ken GOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR ELEMENT AND CRYSTALLINE LAMINATE STRUCTURE
- Publication number 20170278933
- Publication date Sep 28, 2017
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, EPITAXIAL WAFER, AND METHOD FOR MANUFACTUR...
- Publication number 20170145590
- Publication date May 25, 2017
- TAMURA CORPORATION
- Ken GOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING BETA-Ga2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTA...
- Publication number 20160265137
- Publication date Sep 15, 2016
- TAMURA CORPORATION
- Ken GOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL LAYERED STRUCTURE AND LIGHT EMITTING ELEMENT
- Publication number 20150364646
- Publication date Dec 17, 2015
- TAMURA CORPORATION
- Yoshikatsu MORISHIMA
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method for growing beta-Ga2O3-based single crystal film, and crysta...

Semiconductor substrate, and epitaxial wafer and method for produci...

Semiconductor element and crystalline laminate structure

Semiconductor substrate, epitaxial wafer, and method for manufactur...

Crystal laminate structure

High voltage withstand Ga2O3-based single crystal schottky barrier...

Patents Applicationslast 30 patents

METHOD FOR GROWING BETA-GA2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTA...

SEMICONDUCTOR SUBSTRATE, AND EPITAXIAL WAFER AND METHOD FOR PRODUCI...

CRYSTAL LAMINATE STRUCTURE

HIGH WITHSTAND VOLTAGE SCHOTTKY BARRIER DIODE

CRYSTAL LAMINATE STRUCTURE

SEMICONDUCTOR ELEMENT AND CRYSTALLINE LAMINATE STRUCTURE

SEMICONDUCTOR SUBSTRATE, EPITAXIAL WAFER, AND METHOD FOR MANUFACTUR...

METHOD FOR GROWING BETA-Ga2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTA...

CRYSTAL LAYERED STRUCTURE AND LIGHT EMITTING ELEMENT