Kenichi Hamano

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide semiconductor device with a main cell outputting ma...
- Patent number 12,369,350
- Issue date Jul 22, 2025
- Mitsubishi Electric Corporation
- Kenichi Hamano
Information Patent Grant
Semiconductor device
- Patent number 11,088,073
- Issue date Aug 10, 2021
- Mitsubishi Electric Corporation
- Yoshinori Matsuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer,...
- Patent number 10,950,435
- Issue date Mar 16, 2021
- Mitsubishi Electric Corporation
- Kenichi Hamano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer,...
- Patent number 10,910,218
- Issue date Feb 2, 2021
- Mitsubishi Electric Corporation
- Kenichi Hamano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial wafer manufacturing method, silicon carbi...
- Patent number 10,711,372
- Issue date Jul 14, 2020
- Mitsubishi Electric Corporation
- Akihito Ohno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor wafer, semiconductor device, and method for producing...
- Patent number 10,707,075
- Issue date Jul 7, 2020
- Mitsubishi Electric Corporation
- Kenichi Hamano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate mounting member, wafer plate, and SiC epitaxial substrate...
- Patent number 10,508,362
- Issue date Dec 17, 2019
- Mitsubishi Electric Corporation
- Kenichi Hamano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide epitaxial wafer manufacturing method, silicon carbi...
- Patent number 10,370,775
- Issue date Aug 6, 2019
- Mitsubishi Electric Corporation
- Akihito Ohno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing silicon carbide epitaxial wafer
- Patent number 10,229,830
- Issue date Mar 12, 2019
- Mitsubishi Electric Corporation
- Kenichi Hamano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing SiC epitaxial wafer
- Patent number 9,988,738
- Issue date Jun 5, 2018
- Mitsubishi Electric Corporation
- Nobuyuki Tomita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device
- Patent number 9,957,638
- Issue date May 1, 2018
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-crystal 4H-SiC substrate
- Patent number 9,903,048
- Issue date Feb 27, 2018
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a single-crystal 4H—SiC substrate
- Patent number 9,752,254
- Issue date Sep 5, 2017
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-crystal 4H-SiC substrate
- Patent number 9,422,640
- Issue date Aug 23, 2016
- Mitsubishi Electric Corporation
- Akihito Ohno
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Film thickness measurement method
- Patent number 9,400,172
- Issue date Jul 26, 2016
- Mitsubishi Electric Corporation
- Ryo Hattori
- G01 - MEASURING TESTING
Information Patent Grant
Method of manufacturing silicon carbide epitaxial wafer
- Patent number 8,679,952
- Issue date Mar 25, 2014
- Mitsubishi Electric Corporation
- Nobuyuki Tomita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device
- Patent number 8,569,106
- Issue date Oct 29, 2013
- Mitsubishi Electric Corporation
- Kenichi Hamano
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250022754
- Publication date Jan 16, 2025
- Mitsubishi Electric Corporation
- Minori MATSUOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20220416080
- Publication date Dec 29, 2022
- Mitsubishi Electric Corporation
- Kenichi HAMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200303296
- Publication date Sep 24, 2020
- Mitsubishi Electric Corporation
- Yoshinori MATSUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING...
- Publication number 20200144053
- Publication date May 7, 2020
- Mitsubishi Electric Corporation
- Kenichi HAMANO
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC EPITAXIAL WAFER, METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER,...
- Publication number 20200020528
- Publication date Jan 16, 2020
- Mitsubishi Electric Corporation
- Kenichi HAMANO
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER MANUFACTURING METHOD, SILICON CARBI...
- Publication number 20190284718
- Publication date Sep 19, 2019
- Mitsubishi Electric Corporation
- Akihito OHNO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER
- Publication number 20180226246
- Publication date Aug 9, 2018
- Mitsubishi Electric Corporation
- Kenichi HAMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER MANUFACTURING METHOD, SILICON CARBI...
- Publication number 20170314160
- Publication date Nov 2, 2017
- Mitsubishi Electric Corporation
- Akihito OHNO
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE MOUNTING MEMBER, WAFER PLATE, AND SiC EPITAXIAL SUBSTRATE...
- Publication number 20170283984
- Publication date Oct 5, 2017
- Mitsubishi Electric Corporation
- Kenichi HAMANO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING A SINGLE-CRYSTAL 4H-SiC SUBSTRATE
- Publication number 20160298262
- Publication date Oct 13, 2016
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL 4H-SiC SUBSTRATE
- Publication number 20160298264
- Publication date Oct 13, 2016
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC EPITAXIAL WAFER PRODUCTION METHOD
- Publication number 20150354090
- Publication date Dec 10, 2015
- MITSUBISHI ELECTRIC CORPORATION
- Nobuyuki TOMITA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20150267320
- Publication date Sep 24, 2015
- Mitsubishi Electric Corporation
- Akihito OHNO
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL 4H-SiC SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20140295136
- Publication date Oct 2, 2014
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM THICKNESS MEASUREMENT METHOD
- Publication number 20140239181
- Publication date Aug 28, 2014
- Mitsubishi Electric Corporation
- Ryo Hattori
- G01 - MEASURING TESTING
Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR,...
- Publication number 20130126906
- Publication date May 23, 2013
- Mitsubishi Electric Corporation
- Nobuyuki Tomita
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20110312161
- Publication date Dec 22, 2011
- Mitsubishi Electric Corporation
- Kenichi Hamano
- C30 - CRYSTAL GROWTH

Kenichi Hamano

Person

Patents Grantslast 30 patents

Silicon carbide semiconductor device with a main cell outputting ma...

Semiconductor device

SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer,...

SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer,...

Silicon carbide epitaxial wafer manufacturing method, silicon carbi...

Semiconductor wafer, semiconductor device, and method for producing...

Substrate mounting member, wafer plate, and SiC epitaxial substrate...

Silicon carbide epitaxial wafer manufacturing method, silicon carbi...

Method of manufacturing silicon carbide epitaxial wafer

Method for manufacturing SiC epitaxial wafer

Method for manufacturing silicon carbide semiconductor device

Single-crystal 4H-SiC substrate

Method for manufacturing a single-crystal 4H—SiC substrate

Single-crystal 4H-SiC substrate

Film thickness measurement method

Method of manufacturing silicon carbide epitaxial wafer

Method for manufacturing silicon carbide semiconductor device

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING...

SIC EPITAXIAL WAFER, METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER,...

SILICON CARBIDE EPITAXIAL WAFER MANUFACTURING METHOD, SILICON CARBI...

METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER

SILICON CARBIDE EPITAXIAL WAFER MANUFACTURING METHOD, SILICON CARBI...

SUBSTRATE MOUNTING MEMBER, WAFER PLATE, AND SiC EPITAXIAL SUBSTRATE...

METHOD FOR MANUFACTURING A SINGLE-CRYSTAL 4H-SiC SUBSTRATE

SINGLE-CRYSTAL 4H-SiC SUBSTRATE

SIC EPITAXIAL WAFER PRODUCTION METHOD

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SINGLE-CRYSTAL 4H-SiC SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

FILM THICKNESS MEASUREMENT METHOD

SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR,...

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE