Kenichi Imamiya

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor integrated circuit adapted to output pass/fail result...
- Patent number 11,295,823
- Issue date Apr 5, 2022
- Kioxia Corporation
- Hiroshi Nakamura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor integrated circuit adapted to output pass/fail result...
- Patent number 10,741,266
- Issue date Aug 11, 2020
- TOSHIBA MEMORY CORPORATION
- Hiroshi Nakamura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor integrated circuit adapted to output pass/fail result...
- Patent number 10,410,731
- Issue date Sep 10, 2019
- TOSHIBA MEMORY CORPORATION
- Hiroshi Nakamura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor integrated circuit adapted to output pass/fail result...
- Patent number 9,870,831
- Issue date Jan 16, 2018
- TOSHIBA MEMORY CORPORATION
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit adapted to output pass/fail result...
- Patent number 9,536,610
- Issue date Jan 3, 2017
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device having a plurality of chips and capabil...
- Patent number 9,299,436
- Issue date Mar 29, 2016
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit adapted to output pass/fail result...
- Patent number 8,743,625
- Issue date Jun 3, 2014
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device using only single-channel transistor to...
- Patent number 8,724,424
- Issue date May 13, 2014
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device having a plurality of chips and capabil...
- Patent number 8,687,400
- Issue date Apr 1, 2014
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device capable of realizing a chip with high o...
- Patent number 8,665,661
- Issue date Mar 4, 2014
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Grant
EEPROM with increased reading speed
- Patent number 8,513,726
- Issue date Aug 20, 2013
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device using only single-channel transistor to...
- Patent number 8,493,814
- Issue date Jul 23, 2013
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit adapted to output pass/fail result...
- Patent number 8,477,541
- Issue date Jul 2, 2013
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile semiconductor memory and simultaneous writing of data
- Patent number 8,472,268
- Issue date Jun 25, 2013
- Kabushiki Kaisha Toshiba
- Koji Hosono
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device capable of increasing writing speed
- Patent number 8,406,056
- Issue date Mar 26, 2013
- Kabushiki Kaisha Toshiba
- Noboru Shibata
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory
- Patent number 8,350,309
- Issue date Jan 8, 2013
- Kabushiki Kaisha Toshiba
- Hiroshi Watanabe
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device having a plurality of chips and capabil...
- Patent number 8,331,124
- Issue date Dec 11, 2012
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device capable of realizing a chip with high o...
- Patent number 8,259,494
- Issue date Sep 4, 2012
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device capable of realizing a chip with high o...
- Patent number 8,248,849
- Issue date Aug 21, 2012
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit adapted to output pass/fail result...
- Patent number 8,218,374
- Issue date Jul 10, 2012
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit adapted to output pass/fail result...
- Patent number 8,218,373
- Issue date Jul 10, 2012
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile semiconductor memory
- Patent number 8,144,513
- Issue date Mar 27, 2012
- Kabushiki Kaisha Toshiba
- Koji Hosono
- G11 - INFORMATION STORAGE
Information Patent Grant
EEPROM with increased reading speed
- Patent number 8,129,774
- Issue date Mar 6, 2012
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device using only single-channel transistor to...
- Patent number 8,130,589
- Issue date Mar 6, 2012
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device capable of increasing writing speed
- Patent number 8,098,524
- Issue date Jan 17, 2012
- Kabushiki Kaisha Toshiba
- Noboru Shibata
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory
- Patent number 8,084,802
- Issue date Dec 27, 2011
- Kabushiki Kaisha Toshiba
- Hiroshi Watanabe
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device
- Patent number 8,023,355
- Issue date Sep 20, 2011
- Kabushiki Kaisha Toshiba
- Tetsuya Murakami
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device using only single-channel transistor to...
- Patent number 7,974,148
- Issue date Jul 5, 2011
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device having a plurality of chips and capabil...
- Patent number 7,933,134
- Issue date Apr 26, 2011
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device capable of increasing writing speed
- Patent number 7,933,152
- Issue date Apr 26, 2011
- Kabushiki Kaisha Toshiba
- Noboru Shibata
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULT...
- Publication number 20200321067
- Publication date Oct 8, 2020
- Toshiba Memory Corporation
- Hiroshi Nakamura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULT...
- Publication number 20190362800
- Publication date Nov 28, 2019
- Toshiba Memory Corporation
- Hiroshi Nakamura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULT...
- Publication number 20180096729
- Publication date Apr 5, 2018
- Toshiba Memory Corporation
- Hiroshi Nakamura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULT...
- Publication number 20170076817
- Publication date Mar 16, 2017
- KABUSHIKI KAISHA TOSHIBA
- Hiroshi NAKAMURA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULT...
- Publication number 20140226410
- Publication date Aug 14, 2014
- KABUSHIKI KAISHA TOSHIBA
- Hiroshi NAKAMURA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Semiconductor Memory Device Using Only Single-Channel Transistor to...
- Publication number 20140204670
- Publication date Jul 24, 2014
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE HAVING A PLURALITY OF CHIPS AND CAPABIL...
- Publication number 20140153336
- Publication date Jun 5, 2014
- KABUSHIKI KAISHA TOSHIBA
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE USING ONLY SINGLE-CHANNEL TRANSISTOR TO...
- Publication number 20130294160
- Publication date Nov 7, 2013
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULT...
- Publication number 20130262754
- Publication date Oct 3, 2013
- KABUSHIKI KAISHA TOSHIBA
- Hiroshi NAKAMURA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE HAVING A PLURALITY OF CHIPS AND CAPABIL...
- Publication number 20130088922
- Publication date Apr 11, 2013
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE CAPABLE OF REALIZING A CHIP WITH HIGH O...
- Publication number 20120314497
- Publication date Dec 13, 2012
- KABUSHIKI KAISHA TOSHIBA
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULT...
- Publication number 20120243322
- Publication date Sep 27, 2012
- Hiroshi Nakamura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Non-Volatile Semiconductor Memory
- Publication number 20120182798
- Publication date Jul 19, 2012
- Kabushiki Kaisha Toshiba
- Koji Hosono
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE USING ONLY SINGLE-CHANNEL TRANSISTOR TO...
- Publication number 20120147673
- Publication date Jun 14, 2012
- KABUSHIKI KAISHA TOSHIBA
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Application
EEPROM with Increased Reading Speed
- Publication number 20120140570
- Publication date Jun 7, 2012
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE CAPABLE OF INCREASING WRITING SPEED
- Publication number 20120092929
- Publication date Apr 19, 2012
- Noboru SHIBATA
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile Semiconductor Memory
- Publication number 20120075903
- Publication date Mar 29, 2012
- Kabushiki Kaisha Toshiba
- Hiroshi Watanabe
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE
- Publication number 20110273939
- Publication date Nov 10, 2011
- Kabushiki Kaisha Toshiba
- Tetsuya MURAKAMI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE USING ONLY SINGLE-CHANNEL TRANSISTOR TO...
- Publication number 20110216594
- Publication date Sep 8, 2011
- KABUSHIKI KAISHA TOSHIBA
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE HAVING A PLURALITY OF CHIPS AND CAPABIL...
- Publication number 20110170355
- Publication date Jul 14, 2011
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE CAPABLE OF INCREASING WRITING SPEED
- Publication number 20110170350
- Publication date Jul 14, 2011
- Noboru SHIBATA
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile Semiconductor Memory
- Publication number 20110134700
- Publication date Jun 9, 2011
- Kabushiki Kaisha Toshiba
- Hiroshi Watanabe
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULT...
- Publication number 20110096606
- Publication date Apr 28, 2011
- Hiroshi Nakamura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULT...
- Publication number 20110090742
- Publication date Apr 21, 2011
- Hiroshi Nakamura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Non-Volatile Semiconductor Memory
- Publication number 20110075488
- Publication date Mar 31, 2011
- Kabushiki Kaisha Toshiba
- Koji Hosono
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE CAPABLE OF REALIZING A CHIP WITH HIGH O...
- Publication number 20100309722
- Publication date Dec 9, 2010
- KABUSHIKI KAISHA TOSHIBA
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE CAPABLE OF REALIZING A CHIP WITH HIGH O...
- Publication number 20100309723
- Publication date Dec 9, 2010
- KABUSHIKI KAISHA TOSHIBA
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE USING ONLY SINGLE-CHANNEL TRANSISTOR TO...
- Publication number 20100309724
- Publication date Dec 9, 2010
- KABUSHIKI KAISHA TOSHIBA
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY
- Publication number 20100277984
- Publication date Nov 4, 2010
- Kabushiki Kaisha Toshiba
- Hiroshi Nakamura
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE CAPABLE OF INCREASING WRITING SPEED
- Publication number 20100091570
- Publication date Apr 15, 2010
- Noboru SHIBATA
- G11 - INFORMATION STORAGE

Kenichi Imamiya

Person

Patents Grantslast 30 patents

Semiconductor integrated circuit adapted to output pass/fail result...

Semiconductor integrated circuit adapted to output pass/fail result...

Semiconductor integrated circuit adapted to output pass/fail result...

Semiconductor integrated circuit adapted to output pass/fail result...

Semiconductor integrated circuit adapted to output pass/fail result...

Semiconductor memory device having a plurality of chips and capabil...

Semiconductor integrated circuit adapted to output pass/fail result...

Semiconductor memory device using only single-channel transistor to...

Semiconductor memory device having a plurality of chips and capabil...

Semiconductor memory device capable of realizing a chip with high o...

EEPROM with increased reading speed

Semiconductor memory device using only single-channel transistor to...

Semiconductor integrated circuit adapted to output pass/fail result...

Non-volatile semiconductor memory and simultaneous writing of data

Semiconductor memory device capable of increasing writing speed

Nonvolatile semiconductor memory

Semiconductor memory device having a plurality of chips and capabil...

Semiconductor memory device capable of realizing a chip with high o...

Semiconductor memory device capable of realizing a chip with high o...

Semiconductor integrated circuit adapted to output pass/fail result...

Semiconductor integrated circuit adapted to output pass/fail result...

Non-volatile semiconductor memory

EEPROM with increased reading speed

Semiconductor memory device using only single-channel transistor to...

Semiconductor memory device capable of increasing writing speed

Nonvolatile semiconductor memory

Nonvolatile memory device

Semiconductor memory device using only single-channel transistor to...

Semiconductor memory device having a plurality of chips and capabil...

Semiconductor memory device capable of increasing writing speed

Patents Applicationslast 30 patents

SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULT...

SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULT...

SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULT...

SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULT...

SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULT...

Semiconductor Memory Device Using Only Single-Channel Transistor to...

SEMICONDUCTOR MEMORY DEVICE HAVING A PLURALITY OF CHIPS AND CAPABIL...

SEMICONDUCTOR MEMORY DEVICE USING ONLY SINGLE-CHANNEL TRANSISTOR TO...

SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULT...

SEMICONDUCTOR MEMORY DEVICE HAVING A PLURALITY OF CHIPS AND CAPABIL...

SEMICONDUCTOR MEMORY DEVICE CAPABLE OF REALIZING A CHIP WITH HIGH O...

SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULT...

Non-Volatile Semiconductor Memory

SEMICONDUCTOR MEMORY DEVICE USING ONLY SINGLE-CHANNEL TRANSISTOR TO...

EEPROM with Increased Reading Speed

SEMICONDUCTOR MEMORY DEVICE CAPABLE OF INCREASING WRITING SPEED

Nonvolatile Semiconductor Memory

NONVOLATILE MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE USING ONLY SINGLE-CHANNEL TRANSISTOR TO...

SEMICONDUCTOR MEMORY DEVICE HAVING A PLURALITY OF CHIPS AND CAPABIL...

SEMICONDUCTOR MEMORY DEVICE CAPABLE OF INCREASING WRITING SPEED

Nonvolatile Semiconductor Memory

SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULT...

SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULT...

Non-Volatile Semiconductor Memory

SEMICONDUCTOR MEMORY DEVICE CAPABLE OF REALIZING A CHIP WITH HIGH O...

SEMICONDUCTOR MEMORY DEVICE CAPABLE OF REALIZING A CHIP WITH HIGH O...

SEMICONDUCTOR MEMORY DEVICE USING ONLY SINGLE-CHANNEL TRANSISTOR TO...

NONVOLATILE SEMICONDUCTOR MEMORY

SEMICONDUCTOR MEMORY DEVICE CAPABLE OF INCREASING WRITING SPEED