Kenichi Nakano

Person

Beavercreek, OH, US

People

Patents Grantslast 30 patents

Information Patent Grant
Measured via-hole etching
- Patent number 6,653,214
- Issue date Nov 25, 2003
- The United States of America as represented by the Secretary of the Air Force
- Tony K. Quach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary heterostructure integrated single metal transistor ap...
- Patent number 6,222,210
- Issue date Apr 24, 2001
- The United States of America as represented by the Secretary of the Air Force
- Charles L.A. Cerny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary heterostructure integrated single metal transistor fa...
- Patent number 6,198,116
- Issue date Mar 6, 2001
- The United States of America as represented by the Secretary of the Air Force
- Charles L.A. Cerny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single layer integrated metal enhancement mode field-effect transis...
- Patent number 6,066,865
- Issue date May 23, 2000
- The United States of America as represented by the Secretary of the Air Force
- Charles L.A. Cerny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single layer integrated metal process for enhancement mode field-ef...
- Patent number 6,020,226
- Issue date Feb 1, 2000
- The United States of America as represented by the Secretary of the Air Force
- Charles L.A. Cerny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Digital wet etching of semiconductor materials
- Patent number 6,004,881
- Issue date Dec 21, 1999
- The United States of America as represented by the Secretary of the Air Force
- Christopher A. Bozada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single layer integrated metal process for high electron mobility tr...
- Patent number 5,976,920
- Issue date Nov 2, 1999
- The United States of America as represented by the Secretary of the Air Force
- Kenichi Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor process with semiconductor mask, single lay...
- Patent number 5,940,694
- Issue date Aug 17, 1999
- Christopher A. Bozada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single layer integrated metal process for metal semiconductor field...
- Patent number 5,869,364
- Issue date Feb 9, 1999
- The United States of America as represented by the Secretary of the Air Force
- Kenichi Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal semiconductor field effect transistor (MESFET) device with si...
- Patent number 5,796,131
- Issue date Aug 18, 1998
- The United States of America as represented by the Secretary of the Air Force
- Kenichi Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) and pseudomorphic high ele...
- Patent number 5,698,870
- Issue date Dec 16, 1997
- The United States of America as represented by the Secretary of the Air Force
- Kenichi Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor device with single layer integrated metal a...
- Patent number 5,698,900
- Issue date Dec 16, 1997
- The United States of America as represented by the Secretary of the Air Force
- Christopher A. Bozada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a narrow-band inverted homo-heterojunction avalanc...
- Patent number 4,162,203
- Issue date Jul 24, 1979
- The United States of America as represented by the Secretary of the Air Force
- Richard C. Eden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Narrow-band inverted homo-heterojunction avalanche photodiode
- Patent number 4,110,778
- Issue date Aug 29, 1978
- The United States of America as represented by the Secretary of the Air Force
- Richard C. Eden
- H01 - BASIC ELECTRIC ELEMENTS

Kenichi Nakano

Person

Patents Grantslast 30 patents

Measured via-hole etching

Complementary heterostructure integrated single metal transistor ap...

Complementary heterostructure integrated single metal transistor fa...

Single layer integrated metal enhancement mode field-effect transis...

Single layer integrated metal process for enhancement mode field-ef...

Digital wet etching of semiconductor materials

Single layer integrated metal process for high electron mobility tr...

Field effect transistor process with semiconductor mask, single lay...

Single layer integrated metal process for metal semiconductor field...

Metal semiconductor field effect transistor (MESFET) device with si...

High electron mobility transistor (HEMT) and pseudomorphic high ele...

Field effect transistor device with single layer integrated metal a...

Method of making a narrow-band inverted homo-heterojunction avalanc...

Narrow-band inverted homo-heterojunction avalanche photodiode