Kenji Hirakawa

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Yokohama, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,204,276
- Issue date Apr 20, 1993
- Kabushiki Kaisha Toshiba
- Hiroomi Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor and method for manufacturing the same
- Patent number 5,086,005
- Issue date Feb 4, 1992
- Kabushiki Kaisha Toshiba
- Kenji Hirakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral transistor structure for bipolar semiconductor integrated c...
- Patent number 5,065,210
- Issue date Nov 12, 1991
- Kabushiki Kaisha Toshiba
- Kenji Hirakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,028,550
- Issue date Jul 2, 1991
- Kabushiki Kaisha Toshiba
- Kenji Hirakawa
- H01 - BASIC ELECTRIC ELEMENTS