Kenji ISO

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...
- Patent number 12,351,943
- Issue date Jul 8, 2025
- Mitsubishi Chemical Corporation
- Kenji Iso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
GaN substrate wafer and method for manufacturing same
- Patent number 12,288,686
- Issue date Apr 29, 2025
- Mitsubishi Chemical Corporation
- Kenji Iso
- C30 - CRYSTAL GROWTH
Information Patent Grant
N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...
- Patent number 11,987,903
- Issue date May 21, 2024
- Mitsubishi Chemical Corporation
- Kenji Iso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing GaN crystal
- Patent number 11,371,140
- Issue date Jun 28, 2022
- Mitsubishi Chemical Corporation
- Kenji Iso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing GaN crystal
- Patent number 10,961,619
- Issue date Mar 30, 2021
- Mitsubishi Chemical Corporation
- Kenji Iso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
C-plane GaN substrate
- Patent number 10,224,201
- Issue date Mar 5, 2019
- Mitsubishi Chemical Corporation
- Kenji Iso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
C-plane GaN substrate
- Patent number 10,177,217
- Issue date Jan 8, 2019
- Mitsubishi Chemical Corporation
- Kenji Iso
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
GaN CRYSTAL AND METHOD FOR PRODUCING GaN CRYSTAL
- Publication number 20250198052
- Publication date Jun 19, 2025
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
GAN EPITAXIAL SUBSTRATE
- Publication number 20250003113
- Publication date Jan 2, 2025
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
GAN SUBSTRATE
- Publication number 20240413209
- Publication date Dec 12, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
GAN EPITAXIAL SUBSTRATE
- Publication number 20240413210
- Publication date Dec 12, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...
- Publication number 20240279844
- Publication date Aug 22, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GAN SUBSTRATE WAFER AND PRODUCTION METHOD FOR SAME
- Publication number 20220084820
- Publication date Mar 17, 2022
- MITSUBISHI CHEMICAL CORPORATION
- Yuuki ENATSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN SUBSTRATE WAFER AND METHOD FOR MANUFACTURING SAME
- Publication number 20220084819
- Publication date Mar 17, 2022
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN SUBSTRATE WAFER AND METHOD FOR MANUFACTURING GaN SUBSTRATE WAFER
- Publication number 20220010455
- Publication date Jan 13, 2022
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GaN CRYSTAL
- Publication number 20210172061
- Publication date Jun 10, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...
- Publication number 20210164127
- Publication date Jun 3, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING GaN CRYSTAL
- Publication number 20190010605
- Publication date Jan 10, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
C-PLANE GaN SUBSTRATE
- Publication number 20170352721
- Publication date Dec 7, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
C-PLANE GaN SUBSTRATE
- Publication number 20170338112
- Publication date Nov 23, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH

Person

Patents Grantslast 30 patents

n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...

GaN substrate wafer and method for manufacturing same

N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...

Method for producing GaN crystal

Method for producing GaN crystal

C-plane GaN substrate

C-plane GaN substrate

Patents Applicationslast 30 patents

GaN CRYSTAL AND METHOD FOR PRODUCING GaN CRYSTAL

GAN EPITAXIAL SUBSTRATE

GAN SUBSTRATE

GAN EPITAXIAL SUBSTRATE

n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...

GAN SUBSTRATE WAFER AND PRODUCTION METHOD FOR SAME

GAN SUBSTRATE WAFER AND METHOD FOR MANUFACTURING SAME

GaN SUBSTRATE WAFER AND METHOD FOR MANUFACTURING GaN SUBSTRATE WAFER

METHOD FOR PRODUCING GaN CRYSTAL

n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...

METHOD FOR PRODUCING GaN CRYSTAL

C-PLANE GaN SUBSTRATE

C-PLANE GaN SUBSTRATE