Kenji Suzuki

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method and apparatus for reducing substrate temperature variability
- Patent number 8,568,555
- Issue date Oct 29, 2013
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for reducing particle contamination in a depos...
- Patent number 8,268,078
- Issue date Sep 18, 2012
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Void-free copper filling of recessed features using a smooth non-ag...
- Patent number 8,247,030
- Issue date Aug 21, 2012
- Tokyo Electron Limited
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System for introducing a precursor gas to a vapor deposition system
- Patent number 7,892,358
- Issue date Feb 22, 2011
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Void-free copper filling of recessed features for semiconductor dev...
- Patent number 7,884,012
- Issue date Feb 8, 2011
- Tokyo Electron Limited
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for performing a vapor deposition process
- Patent number 7,867,560
- Issue date Jan 11, 2011
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for reducing carbon monoxide poisoning in a thin film deposi...
- Patent number 7,858,522
- Issue date Dec 28, 2010
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ampule tray for and method of precursor surface area
- Patent number 7,846,256
- Issue date Dec 7, 2010
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for integrating selective ruthenium deposition into manufact...
- Patent number 7,829,454
- Issue date Nov 9, 2010
- Tokyo Electron Limited
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a ruthenium metal cap layer
- Patent number 7,799,681
- Issue date Sep 21, 2010
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for pre-conditioning a precursor vaporization system for a v...
- Patent number 7,794,788
- Issue date Sep 14, 2010
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma sputtering film deposition method and equipment
- Patent number 7,790,626
- Issue date Sep 7, 2010
- Tokyo Electron Limited
- Taro Ikeda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Interconnect structures with a metal nitride diffusion barrier cont...
- Patent number 7,786,006
- Issue date Aug 31, 2010
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for integrating selective low-temperature ruthenium depositi...
- Patent number 7,776,740
- Issue date Aug 17, 2010
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for heating a substrate prior to a vapor deposition process
- Patent number 7,763,311
- Issue date Jul 27, 2010
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for integrating a ruthenium layer with bulk copper in copper...
- Patent number 7,713,876
- Issue date May 11, 2010
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film precursor tray for use in a film precursor evaporation system...
- Patent number 7,708,835
- Issue date May 4, 2010
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming low-resistivity recessed features in copper metal...
- Patent number 7,704,879
- Issue date Apr 27, 2010
- Tokyo Electron Limited
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for increasing deposition rates of metal layers from metal-c...
- Patent number 7,678,421
- Issue date Mar 16, 2010
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Deposition system for increasing deposition rates of metal layers f...
- Patent number 7,646,084
- Issue date Jan 12, 2010
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Multi-tray film precursor evaporation system and thin film depositi...
- Patent number 7,638,002
- Issue date Dec 29, 2009
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integration of a variable thickness copper seed layer in copper met...
- Patent number 7,605,078
- Issue date Oct 20, 2009
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for preparing solid precursor tray for use in solid precurso...
- Patent number 7,488,512
- Issue date Feb 10, 2009
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Replaceable precursor tray for use in a multi-tray solid precursor...
- Patent number 7,484,315
- Issue date Feb 3, 2009
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for controlling the step coverage of a ruthenium layer on a...
- Patent number 7,482,269
- Issue date Jan 27, 2009
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for integrated substrate processing in copper metallization
- Patent number 7,473,634
- Issue date Jan 6, 2009
- Tokyo Electron Limited
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for thin film deposition using multi-tray film precursor eva...
- Patent number 7,459,396
- Issue date Dec 2, 2008
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for purifying a metal carbonyl precursor
- Patent number 7,459,395
- Issue date Dec 2, 2008
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for integrating a conformal ruthenium layer into copper meta...
- Patent number 7,432,195
- Issue date Oct 7, 2008
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low-temperature chemical vapor deposition of low-resistivity ruthen...
- Patent number 7,396,766
- Issue date Jul 8, 2008
- Tokyo Electron Limited
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
INTERCONNECT STRUCTURES WITH A METAL NITRIDE DIFFUSION BARRIER CONT...
- Publication number 20100320607
- Publication date Dec 23, 2010
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR FORMING A RUTHENIUM METAL CAP LAYER
- Publication number 20100015798
- Publication date Jan 21, 2010
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
VOID-FREE COPPER FILLING OF RECESSED FEATURES USING A SMOOTH NON-AG...
- Publication number 20090226611
- Publication date Sep 10, 2009
- TOKYO ELECTRON LIMITED
- Kenji SUZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR INTEGRATING SELECTIVE LOW-TEMPERATURE RUTHENIUM DEPOSITI...
- Publication number 20090186481
- Publication date Jul 23, 2009
- TOKYO ELECTRON LIMITED
- Kenji SUZUKI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING LOW-RESISTIVITY RECESSED FEATURES IN COPPER METAL...
- Publication number 20090130843
- Publication date May 21, 2009
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20090085130
- Publication date Apr 2, 2009
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
VOID-FREE COPPER FILLING OF RECESSED FEATURES FOR SEMICONDUCTOR DEV...
- Publication number 20090087981
- Publication date Apr 2, 2009
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR INTEGRATING SELECTIVE RUTHENIUM DEPOSITION INTO MANUFACT...
- Publication number 20090065939
- Publication date Mar 12, 2009
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for reducing substrate temperature variability
- Publication number 20080241379
- Publication date Oct 2, 2008
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRE-CONDITIONING A PRECURSOR VAPORIZATION SYSTEM FOR A V...
- Publication number 20080241381
- Publication date Oct 2, 2008
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING LOW RESISTIVITY COPPER FILM STRUCTURES
- Publication number 20080242088
- Publication date Oct 2, 2008
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR HEATING A SUBSTRATE PRIOR TO A VAPOR DEPOSITION PROCESS
- Publication number 20080241357
- Publication date Oct 2, 2008
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- B08 - CLEANING
Information Patent Application
METHOD FOR PERFORMING A VAPOR DEPOSITION PROCESS
- Publication number 20080241380
- Publication date Oct 2, 2008
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTERCONNECT STRUCTURES WITH A METAL NITRIDE DIFFUSION BARRIER CONT...
- Publication number 20080206982
- Publication date Aug 28, 2008
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
AMPULE TRAY FOR AND METHOD OF PRECURSOR SURFACE AREA
- Publication number 20080202426
- Publication date Aug 28, 2008
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Plasma Sputtering Film Deposition Method and Equipment
- Publication number 20080200002
- Publication date Aug 21, 2008
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATION OF A VARIABLE THICKNESS COPPER SEED LAYER IN COPPER MET...
- Publication number 20080081474
- Publication date Apr 3, 2008
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
METHOD FOR INTEGRATED SUBSTRATE PROCESSING IN COPPER METALLIZATION
- Publication number 20080081473
- Publication date Apr 3, 2008
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITION SYSTEM FOR INCREASING DEPOSITION RATES OF METAL LAYERS F...
- Publication number 20080035062
- Publication date Feb 14, 2008
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR INCREASING DEPOSITION RATES OF METAL LAYERS FROM METAL-C...
- Publication number 20080003360
- Publication date Jan 3, 2008
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD AND APPARATUS FOR REDUCING CARBON MONOXIDE POISONING AT THE...
- Publication number 20070234955
- Publication date Oct 11, 2007
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD AND SYSTEM FOR INITIATING A DEPOSITION PROCESS UTILIZING A M...
- Publication number 20070237895
- Publication date Oct 11, 2007
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SYSTEM FOR INTRODUCING A PRECURSOR GAS TO A VAPOR DEPOSITION SYSTEM
- Publication number 20070234962
- Publication date Oct 11, 2007
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR INTEGRATING A CONFORMAL RUTHENIUM LAYER INTO COPPER META...
- Publication number 20070238288
- Publication date Oct 11, 2007
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD AND INTEGRATED SYSTEM FOR PURIFYING AND DELIVERING A METAL C...
- Publication number 20070231241
- Publication date Oct 4, 2007
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR REDUCING CARBON MONOXIDE POISONING IN A THIN FILM DEPOSI...
- Publication number 20070232040
- Publication date Oct 4, 2007
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR INTRODUCING A PRECURSOR GAS TO A VAPOR DEPOSITION SYSTEM
- Publication number 20070231489
- Publication date Oct 4, 2007
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method and apparatus for reducing particle formation in a vapor dis...
- Publication number 20070218200
- Publication date Sep 20, 2007
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method and apparatus for reducing particle contamination in a depos...
- Publication number 20070215048
- Publication date Sep 20, 2007
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor device containing a ruthenium diffusion barrier and m...
- Publication number 20070069383
- Publication date Mar 29, 2007
- TOKYO ELECTRON LIMITED
- Kenji Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Kenji Suzuki

Person

Patents Grantslast 30 patents

Method and apparatus for reducing substrate temperature variability

Method and apparatus for reducing particle contamination in a depos...

Void-free copper filling of recessed features using a smooth non-ag...

System for introducing a precursor gas to a vapor deposition system

Void-free copper filling of recessed features for semiconductor dev...

Method for performing a vapor deposition process

Method for reducing carbon monoxide poisoning in a thin film deposi...

Ampule tray for and method of precursor surface area

Method for integrating selective ruthenium deposition into manufact...

Method for forming a ruthenium metal cap layer

Method for pre-conditioning a precursor vaporization system for a v...

Plasma sputtering film deposition method and equipment

Interconnect structures with a metal nitride diffusion barrier cont...

Method for integrating selective low-temperature ruthenium depositi...

Method for heating a substrate prior to a vapor deposition process

Method for integrating a ruthenium layer with bulk copper in copper...

Film precursor tray for use in a film precursor evaporation system...

Method of forming low-resistivity recessed features in copper metal...

Method for increasing deposition rates of metal layers from metal-c...

Deposition system for increasing deposition rates of metal layers f...

Multi-tray film precursor evaporation system and thin film depositi...

Integration of a variable thickness copper seed layer in copper met...

Method for preparing solid precursor tray for use in solid precurso...

Replaceable precursor tray for use in a multi-tray solid precursor...

Method for controlling the step coverage of a ruthenium layer on a...

Method for integrated substrate processing in copper metallization

Method for thin film deposition using multi-tray film precursor eva...

Method for purifying a metal carbonyl precursor

Method for integrating a conformal ruthenium layer into copper meta...

Low-temperature chemical vapor deposition of low-resistivity ruthen...

Patents Applicationslast 30 patents

INTERCONNECT STRUCTURES WITH A METAL NITRIDE DIFFUSION BARRIER CONT...

METHOD FOR FORMING A RUTHENIUM METAL CAP LAYER

VOID-FREE COPPER FILLING OF RECESSED FEATURES USING A SMOOTH NON-AG...

METHOD FOR INTEGRATING SELECTIVE LOW-TEMPERATURE RUTHENIUM DEPOSITI...

METHOD OF FORMING LOW-RESISTIVITY RECESSED FEATURES IN COPPER METAL...

Semiconductor device

VOID-FREE COPPER FILLING OF RECESSED FEATURES FOR SEMICONDUCTOR DEV...

METHOD FOR INTEGRATING SELECTIVE RUTHENIUM DEPOSITION INTO MANUFACT...

Method and apparatus for reducing substrate temperature variability

METHOD FOR PRE-CONDITIONING A PRECURSOR VAPORIZATION SYSTEM FOR A V...

METHOD OF FORMING LOW RESISTIVITY COPPER FILM STRUCTURES

METHOD FOR HEATING A SUBSTRATE PRIOR TO A VAPOR DEPOSITION PROCESS

METHOD FOR PERFORMING A VAPOR DEPOSITION PROCESS

INTERCONNECT STRUCTURES WITH A METAL NITRIDE DIFFUSION BARRIER CONT...

AMPULE TRAY FOR AND METHOD OF PRECURSOR SURFACE AREA

Plasma Sputtering Film Deposition Method and Equipment

INTEGRATION OF A VARIABLE THICKNESS COPPER SEED LAYER IN COPPER MET...

METHOD FOR INTEGRATED SUBSTRATE PROCESSING IN COPPER METALLIZATION

DEPOSITION SYSTEM FOR INCREASING DEPOSITION RATES OF METAL LAYERS F...

METHOD FOR INCREASING DEPOSITION RATES OF METAL LAYERS FROM METAL-C...

METHOD AND APPARATUS FOR REDUCING CARBON MONOXIDE POISONING AT THE...

METHOD AND SYSTEM FOR INITIATING A DEPOSITION PROCESS UTILIZING A M...

SYSTEM FOR INTRODUCING A PRECURSOR GAS TO A VAPOR DEPOSITION SYSTEM

METHOD FOR INTEGRATING A CONFORMAL RUTHENIUM LAYER INTO COPPER META...

METHOD AND INTEGRATED SYSTEM FOR PURIFYING AND DELIVERING A METAL C...

METHOD FOR REDUCING CARBON MONOXIDE POISONING IN A THIN FILM DEPOSI...

METHOD FOR INTRODUCING A PRECURSOR GAS TO A VAPOR DEPOSITION SYSTEM

Method and apparatus for reducing particle formation in a vapor dis...

Method and apparatus for reducing particle contamination in a depos...

Semiconductor device containing a ruthenium diffusion barrier and m...