Kenji Tomizawa

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Omiya, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method for monocrystaline growth of dissociative compound semicondu...
- Patent number 5,091,043
- Issue date Feb 25, 1992
- Mitsubishi Materials Corporation
- Keiji Shirata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing single crystal
- Patent number 5,078,830
- Issue date Jan 7, 1992
- Mitsubishi Metal Corporation
- Keiji Shirata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for monocrystalline growth of dissociative compound semicond...
- Patent number 5,074,953
- Issue date Dec 24, 1991
- Mitsubishi Materials Corporation
- Keiji Shirata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing single crystals of dissociative compound semicon...
- Patent number 4,750,969
- Issue date Jun 14, 1988
- Research Development Corporation of Japan
- Koichi Sassa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for growing single crystals of dissociative compounds
- Patent number 4,704,257
- Issue date Nov 3, 1987
- Research Development Corporation of Japan
- Kenji Tomizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing single crystals of dissociative compounds
- Patent number 4,664,742
- Issue date May 12, 1987
- Tomizawa; Kenji
- Kenji Tomizawa
- C30 - CRYSTAL GROWTH