Kenji Tomizawa

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Noda-shi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a SOI structure having a SiGe layer interpo...
- Patent number 7,947,572
- Issue date May 24, 2011
- Sumitomo Mitsubishi Silicon Corp.
- Jeagun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI structure having a SiGe layer interposed between the silicon an...
- Patent number 7,180,138
- Issue date Feb 20, 2007
- Sumitomo Mitsubishi Silicon Corp.
- Jeagun Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING A SOI STRUCTURE HAVING A SIGE LAYER INTERPO...
- Publication number 20100221877
- Publication date Sep 2, 2010
- Sumitomo Mitsubishi Silicon Corporation
- Jeagun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI structure having a sige layer interposed between the silicon an...
- Publication number 20060063356
- Publication date Mar 23, 2006
- Sumitomo Mitsubishi Silicon Corporation
- Jeagun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI structure having a sige layer interposed between the silicon an...
- Publication number 20050242396
- Publication date Nov 3, 2005
- Sumitomo Mitsubishi Silicon Corporation
- Jeagun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI structure having a SiGe Layer interposed between the silicon an...
- Publication number 20030230778
- Publication date Dec 18, 2003
- Sumitomo Mitsubishi Silicon Corporation
- Jeagun Park
- H01 - BASIC ELECTRIC ELEMENTS