Kenny L. Doan

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Electrostatic chuck assembly having a dielectric filler
- Patent number 10,930,540
- Issue date Feb 23, 2021
- Applied Materials, Inc.
- Kartik Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method, apparatus and system for wafer dechucking using dynamic vol...
- Patent number 10,546,731
- Issue date Jan 28, 2020
- Applied Materials, Inc.
- Haitao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic chuck assembly having a dielectric filler
- Patent number 10,504,765
- Issue date Dec 10, 2019
- Applied Materials, Inc.
- Kartik Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using bias RF pulsing to effectively clean electrostatic chuck (ESC)
- Patent number 10,410,845
- Issue date Sep 10, 2019
- Applied Materials, Inc.
- Kenny Linh Doan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching oxide-nitride stacks using C4F6H2
- Patent number 9,748,366
- Issue date Aug 29, 2017
- Applied Materials, Inc.
- Jong Mun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Boron-doped carbon-based hardmask etch processing
- Patent number 9,129,911
- Issue date Sep 8, 2015
- Applied Materials, Inc.
- Kenny Linh Doan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etch processes for boron-doped carbonaceous mask layers
- Patent number 8,778,207
- Issue date Jul 15, 2014
- Applied Materials, Inc.
- Jong Mun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching substrate
- Patent number 8,668,837
- Issue date Mar 11, 2014
- Applied Materials, Inc.
- Kenny Linh Doan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma reactor apparatus with multiple gas injection zones having t...
- Patent number 8,231,799
- Issue date Jul 31, 2012
- Applied Materials, Inc.
- Kallol Bera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preventing etch profile bending and bowing in high aspect...
- Patent number 7,846,846
- Issue date Dec 7, 2010
- Applied Materials, Inc.
- Kallol Bera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etch process with separately fed carbon-lean and carbon-rich...
- Patent number 7,541,292
- Issue date Jun 2, 2009
- Applied Materials, Inc.
- Kallol Bera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etch process using polymerizing etch gases across a wafer su...
- Patent number 7,540,971
- Issue date Jun 2, 2009
- Applied Materials, Inc.
- Kallol Bera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etch process using polymerizing etch gases with different et...
- Patent number 7,431,859
- Issue date Oct 7, 2008
- Applied Materials, Inc.
- Kallol Bera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for uniformly etching a dielectric layer
- Patent number 7,316,761
- Issue date Jan 8, 2008
- Applied Materials, Inc.
- Kenny L. Doan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ashable layers for reducing critical dimensions of integrated circu...
- Patent number 7,105,442
- Issue date Sep 12, 2006
- Applied Materials, Inc.
- Hongching Shan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed inductively-coupled plasma source and circuit for coupl...
- Patent number 6,825,618
- Issue date Nov 30, 2004
- Bryan Y. Pu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching a trench in a silicon-containing dielectric material
- Patent number 6,686,293
- Issue date Feb 3, 2004
- Applied Materials, Inc.
- Yunsang Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed inductively-coupled plasma source and circuit for coupl...
- Patent number 6,568,346
- Issue date May 27, 2003
- Applied Materials Inc.
- Bryan Y. Pu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch method using a dielectric etch chamber with expanded process w...
- Patent number 6,403,491
- Issue date Jun 11, 2002
- Applied Materials, Inc.
- Jingbao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed inductively-coupled plasma source
- Patent number 6,273,022
- Issue date Aug 14, 2001
- Applied Materials, Inc.
- Bryan Y. Pu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTROSTATIC CHUCK ASSEMBLY HAVING A DIELECTRIC FILLER
- Publication number 20200066566
- Publication date Feb 27, 2020
- Applied Materials, Inc.
- Kartik Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USING BIAS RF PULSING TO EFFECTIVELY CLEAN ELECTROSTATIC CHUCK (ESC)
- Publication number 20190157052
- Publication date May 23, 2019
- Applied Materials, Inc.
- Kenny Linh DOAN
- B08 - CLEANING
Information Patent Application
Electrostatic Chuck Assembly Having A Dielectric Filler
- Publication number 20180308736
- Publication date Oct 25, 2018
- Applied Materials, Inc.
- Kartik Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING OXIDE-NITRIDE STACKS USING C4F6H2
- Publication number 20150097276
- Publication date Apr 9, 2015
- Applied Materials, Inc.
- Jong Mun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS KIT FOR EDGE CRITICAL DIMENSION UNIFORMITY CONTROL
- Publication number 20150001180
- Publication date Jan 1, 2015
- Applied Materials, Inc.
- Kenny Linh DOAN
- B32 - LAYERED PRODUCTS
Information Patent Application
ETCH PROCESS HAVING ADAPTIVE CONTROL WITH ETCH DEPTH OF PRESSURE AN...
- Publication number 20140342570
- Publication date Nov 20, 2014
- Applied Materials, Inc.
- Kenny Linh Doan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BORON-DOPED CARBON-BASED HARDMASK ETCH PROCESSING
- Publication number 20140213059
- Publication date Jul 31, 2014
- Kenny Linh Doan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR ETCHING OXIDE LAYERS USING PROCESS GAS PULSING
- Publication number 20130224960
- Publication date Aug 29, 2013
- Applied Materials, Inc.
- Jairaj Payyapilly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ETCHING HIGH ASPECT RATIO FEATURES IN A DIELECTRIC LAYER
- Publication number 20130122712
- Publication date May 16, 2013
- Jong Mun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCH PROCESSES FOR BORON-DOPED CARBONACEOUS MASK LAYERS
- Publication number 20130109188
- Publication date May 2, 2013
- Jong Mun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ETCHING SUBSTRATE
- Publication number 20130092656
- Publication date Apr 18, 2013
- Applied Materials, Inc.
- Kenny Linh Doan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING HIGH ASPECT RATIO FEATURES ON A SUBSTRATE
- Publication number 20100330805
- Publication date Dec 30, 2010
- KENNY LINH DOAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PREVENTING ETCH PROFILE BENDING AND BOWING IN HIGH ASPECT...
- Publication number 20090081876
- Publication date Mar 26, 2009
- Applied Materials, Inc.
- Kallol BERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma etch process using polymerizing etch gases across a wafer su...
- Publication number 20070251917
- Publication date Nov 1, 2007
- APPLIED MATERIALS, INC.
- Kallol Bera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma etch process using polymerizing etch gases and an inert dilu...
- Publication number 20070254483
- Publication date Nov 1, 2007
- APPLIED MATERIALS, INC.
- Kallol Bera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma reactor apparatus with multiple gas injection zones having t...
- Publication number 20070251642
- Publication date Nov 1, 2007
- APPLIED MATERIALS, INC.
- Kallol Bera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma etch process using polymerizing etch gases with different et...
- Publication number 20070251918
- Publication date Nov 1, 2007
- APPLIED MATERIALS, INC.
- Kallol Bera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma etch process with separately fed carbon-lean and carbon-rich...
- Publication number 20070254486
- Publication date Nov 1, 2007
- APPLIED MATERIALS, INC.
- Kallol Bera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus for uniformly etching a dielectric layer
- Publication number 20040149394
- Publication date Aug 5, 2004
- APPLIED MATERIALS, INC.
- Kenny L. Doan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ashable layers for reducing critical dimensions of integrated circu...
- Publication number 20030219988
- Publication date Nov 27, 2003
- APPLIED MATERIALS, INC.
- Hongqing Shan
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
METHOD OF ETCHING A TRENCH IN A SILICON-CONTAINING DIELECTRIC MATERIAL
- Publication number 20030211750
- Publication date Nov 13, 2003
- Yunsang Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Distributed inductively-coupled plasma source and circuit for coupl...
- Publication number 20030192644
- Publication date Oct 16, 2003
- APPLIED MATERIALS, INC.
- Bryan Y. Pu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitively coupled reactive ion etch plasma reactor with overhead...
- Publication number 20020101167
- Publication date Aug 1, 2002
- APPLIED MATERIALS, INC.
- Hongqing Shan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Distributed inductively-coupled plasma source and circuit for coupl...
- Publication number 20010054383
- Publication date Dec 27, 2001
- APPLIED MATERIALS, INC.
- Bryan Y. Pu
- H01 - BASIC ELECTRIC ELEMENTS

Kenny L. Doan

Person

Patents Grantslast 30 patents

Electrostatic chuck assembly having a dielectric filler

Method, apparatus and system for wafer dechucking using dynamic vol...

Electrostatic chuck assembly having a dielectric filler

Using bias RF pulsing to effectively clean electrostatic chuck (ESC)

Etching oxide-nitride stacks using C4F6H2

Boron-doped carbon-based hardmask etch processing

Plasma etch processes for boron-doped carbonaceous mask layers

Method for etching substrate

Plasma reactor apparatus with multiple gas injection zones having t...

Method of preventing etch profile bending and bowing in high aspect...

Plasma etch process with separately fed carbon-lean and carbon-rich...

Plasma etch process using polymerizing etch gases across a wafer su...

Plasma etch process using polymerizing etch gases with different et...

Apparatus for uniformly etching a dielectric layer

Ashable layers for reducing critical dimensions of integrated circu...

Distributed inductively-coupled plasma source and circuit for coupl...

Method of etching a trench in a silicon-containing dielectric material

Distributed inductively-coupled plasma source and circuit for coupl...

Etch method using a dielectric etch chamber with expanded process w...

Distributed inductively-coupled plasma source

Patents Applicationslast 30 patents

ELECTROSTATIC CHUCK ASSEMBLY HAVING A DIELECTRIC FILLER

USING BIAS RF PULSING TO EFFECTIVELY CLEAN ELECTROSTATIC CHUCK (ESC)

Electrostatic Chuck Assembly Having A Dielectric Filler

ETCHING OXIDE-NITRIDE STACKS USING C4F6H2

PROCESS KIT FOR EDGE CRITICAL DIMENSION UNIFORMITY CONTROL

ETCH PROCESS HAVING ADAPTIVE CONTROL WITH ETCH DEPTH OF PRESSURE AN...

BORON-DOPED CARBON-BASED HARDMASK ETCH PROCESSING

METHODS FOR ETCHING OXIDE LAYERS USING PROCESS GAS PULSING

METHOD OF ETCHING HIGH ASPECT RATIO FEATURES IN A DIELECTRIC LAYER

PLASMA ETCH PROCESSES FOR BORON-DOPED CARBONACEOUS MASK LAYERS

METHOD FOR ETCHING SUBSTRATE

METHODS FOR FORMING HIGH ASPECT RATIO FEATURES ON A SUBSTRATE

METHOD OF PREVENTING ETCH PROFILE BENDING AND BOWING IN HIGH ASPECT...

Plasma etch process using polymerizing etch gases across a wafer su...

Plasma etch process using polymerizing etch gases and an inert dilu...

Plasma reactor apparatus with multiple gas injection zones having t...

Plasma etch process using polymerizing etch gases with different et...

Plasma etch process with separately fed carbon-lean and carbon-rich...

Apparatus for uniformly etching a dielectric layer

Ashable layers for reducing critical dimensions of integrated circu...

METHOD OF ETCHING A TRENCH IN A SILICON-CONTAINING DIELECTRIC MATERIAL

Distributed inductively-coupled plasma source and circuit for coupl...

Capacitively coupled reactive ion etch plasma reactor with overhead...

Distributed inductively-coupled plasma source and circuit for coupl...