Kensaku Yamamoto

Person

Chiryu-city, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method of silicon carbide semiconductor device and si...
- Patent number 11,501,971
- Issue date Nov 15, 2022
- Denso Corporation
- Toru Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching element and method of manufacturing the same
- Patent number 10,468,520
- Issue date Nov 5, 2019
- Toyota Jidosha Kabushiki Kaisha
- Hiromichi Kinpara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 9,640,655
- Issue date May 2, 2017
- Toyota Jidosha Kabushiki Kaisha
- Shinya Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of silicon carbide single crystal
- Patent number 8,518,809
- Issue date Aug 27, 2013
- Denso Corporation
- Hiroki Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device including cell region and peripheral region ha...
- Patent number 8,492,867
- Issue date Jul 23, 2013
- Denso Corporation
- Kensaku Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC single crystal substrate, SiC single crystal epitaxial wafer, a...
- Patent number 8,470,091
- Issue date Jun 25, 2013
- Denso Corporation
- Yasuo Kitou
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method of th...
- Patent number 8,154,074
- Issue date Apr 10, 2012
- Denso Corporation
- Kensaku Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device havin...
- Patent number 7,993,966
- Issue date Aug 9, 2011
- Denso Corporation
- Takeshi Endo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device including deep layer
- Patent number 7,994,513
- Issue date Aug 9, 2011
- Denso Corporation
- Kensaku Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate type semiconductor device
- Patent number 7,667,269
- Issue date Feb 23, 2010
- Denso Corporation
- Yukio Tsuzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate type insulated gate bipolar transistor
- Patent number 7,498,658
- Issue date Mar 3, 2009
- Denso Corporation
- Yoshihiko Ozeki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE AND SI...
- Publication number 20210013039
- Publication date Jan 14, 2021
- Denso Corporation
- Toru ONISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING ELEMENT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20190123192
- Publication date Apr 25, 2019
- Toyota Jidosha Kabushiki Kaisha
- Hiromichi KINPARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING CIRCUIT
- Publication number 20170264282
- Publication date Sep 14, 2017
- Toyota Jidosha Kabushiki Kaisha
- Masahiro SUGIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20160005861
- Publication date Jan 7, 2016
- Toyota Jidosha Kabushiki Kaisha
- Shinya NISHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20140175459
- Publication date Jun 26, 2014
- Toyota Jidosha Kabushiki Kaisha
- Kensaku Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20120319136
- Publication date Dec 20, 2012
- Toyota Jidosha Kabushiki Kaisha
- Masato Noborio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20120142173
- Publication date Jun 7, 2012
- DENSO CORPORATION
- Hiroki WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING CELL REGION AND PERIPHERAL REGION HA...
- Publication number 20110309464
- Publication date Dec 22, 2011
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kensaku YAMAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20110203513
- Publication date Aug 25, 2011
- DENSO CORPORATION
- Hiroki WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC single crystal substrate, SiC single crystal epitaxial wafer, a...
- Publication number 20100200866
- Publication date Aug 12, 2010
- DENSO CORPORATION
- Yasuo Kitou
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon carbide semiconductor device and manufacturing method of th...
- Publication number 20100006861
- Publication date Jan 14, 2010
- DENSO CORPORATION
- Kensaku Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device including deep layer
- Publication number 20090261350
- Publication date Oct 22, 2009
- DENSO CORPORATION
- Kensaku Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device having high channel mobility a...
- Publication number 20080283845
- Publication date Nov 20, 2008
- DENSO CORPORATION
- Takeshi Endo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device having high channel mobility a...
- Publication number 20070045631
- Publication date Mar 1, 2007
- DENSO CORPORATION
- Takeshi Endo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench gate type semiconductor device
- Publication number 20060244053
- Publication date Nov 2, 2006
- DENSO CORPORATION
- Yukio Tsuzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench gate type insulated gate bipolar transistor
- Publication number 20060244104
- Publication date Nov 2, 2006
- DENSO CORPORATION
- Yoshihiko Ozeki
- H01 - BASIC ELECTRIC ELEMENTS

Kensaku Yamamoto

Person

Patents Grantslast 30 patents

Manufacturing method of silicon carbide semiconductor device and si...

Switching element and method of manufacturing the same

Semiconductor device and manufacturing method of semiconductor device

Manufacturing method of silicon carbide single crystal

Semiconductor device including cell region and peripheral region ha...

SiC single crystal substrate, SiC single crystal epitaxial wafer, a...

Silicon carbide semiconductor device and manufacturing method of th...

Method for manufacturing silicon carbide semiconductor device havin...

Silicon carbide semiconductor device including deep layer

Trench gate type semiconductor device

Trench gate type insulated gate bipolar transistor

Patents Applicationslast 30 patents

MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE AND SI...

SWITCHING ELEMENT AND METHOD OF MANUFACTURING THE SAME

SWITCHING CIRCUIT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL

SEMICONDUCTOR DEVICE INCLUDING CELL REGION AND PERIPHERAL REGION HA...

METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE

SiC single crystal substrate, SiC single crystal epitaxial wafer, a...

Silicon carbide semiconductor device and manufacturing method of th...

Silicon carbide semiconductor device including deep layer

Silicon carbide semiconductor device having high channel mobility a...

Silicon carbide semiconductor device having high channel mobility a...

Trench gate type semiconductor device

Trench gate type insulated gate bipolar transistor