Kensuke Kasahara

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor
- Patent number 7,863,648
- Issue date Jan 4, 2011
- NEC Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 7,800,131
- Issue date Sep 21, 2010
- NEC Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having Schottky junction electrode
- Patent number 7,071,526
- Issue date Jul 4, 2006
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride semiconductor device of field effect transistor t...
- Patent number 6,765,241
- Issue date Jul 20, 2004
- NEC Corporation
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-junction field effect transistor having an intermediate layer
- Patent number 6,552,373
- Issue date Apr 22, 2003
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with schottky electrode having high schottky b...
- Patent number 6,492,669
- Issue date Dec 10, 2002
- NEC Corporation
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with barrier layer to prevent avalanche bre...
- Patent number 6,476,431
- Issue date Nov 5, 2002
- NEC Corporation
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,465,814
- Issue date Oct 15, 2002
- NEC Corporation
- Kensuke Kasahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having drain and gate electrodes formed to lie...
- Patent number 6,441,391
- Issue date Aug 27, 2002
- NEC Corporation
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device with sidewall metal la...
- Patent number 6,440,822
- Issue date Aug 27, 2002
- NEC Corporation
- Nobuyuki Hayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device and method of manufacturing the same
- Patent number 6,180,968
- Issue date Jan 30, 2001
- NEC Corporation
- Kensuke Kasahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process of semiconductor device
- Patent number 6,093,657
- Issue date Jul 25, 2000
- NEC Corporation
- Satoru Ohkubo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 5,869,856
- Issue date Feb 9, 1999
- NEC Corporation
- Kensuke Kasahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium-phosphide hetero-MIS-gate field effect transistor
- Patent number 4,837,605
- Issue date Jun 6, 1989
- NEC Corporation
- Kensuke Kasahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and the same associated with an optical sem...
- Patent number 4,829,346
- Issue date May 9, 1989
- NEC Corporation
- Kensuke Kasahara
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Field effect transistor
- Publication number 20090230429
- Publication date Sep 17, 2009
- NEC Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor
- Publication number 20090230430
- Publication date Sep 17, 2009
- NEC CORPRORATION
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060054929
- Publication date Mar 16, 2006
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having schottky junction electrode
- Publication number 20050151255
- Publication date Jul 14, 2005
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20030151064
- Publication date Aug 14, 2003
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20020047113
- Publication date Apr 25, 2002
- NEC Corporation
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device with sidewall metal la...
- Publication number 20020048889
- Publication date Apr 25, 2002
- NEC Corporation
- Nobuyuki Hayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20020017648
- Publication date Feb 14, 2002
- Kensuke Kasahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with schottky electrode having high schottky b...
- Publication number 20020017696
- Publication date Feb 14, 2002
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hetero-junction field effect transistor having an intermediate layer
- Publication number 20010040247
- Publication date Nov 15, 2001
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS

Kensuke Kasahara

Person

Patents Grantslast 30 patents

Field effect transistor

Field effect transistor

Semiconductor device having Schottky junction electrode

Group III nitride semiconductor device of field effect transistor t...

Hetero-junction field effect transistor having an intermediate layer

Semiconductor device with schottky electrode having high schottky b...

Field effect transistor with barrier layer to prevent avalanche bre...

Semiconductor device

Semiconductor device having drain and gate electrodes formed to lie...

Method of manufacturing semiconductor device with sidewall metal la...

Compound semiconductor device and method of manufacturing the same

Fabrication process of semiconductor device

Field effect transistor

Indium-phosphide hetero-MIS-gate field effect transistor

Field-effect transistor and the same associated with an optical sem...

Patents Applicationslast 30 patents

Field effect transistor

Field effect transistor

Semiconductor device

Semiconductor device having schottky junction electrode

Semiconductor device

Semiconductor device

Method of manufacturing semiconductor device with sidewall metal la...

Semiconductor device

Semiconductor device with schottky electrode having high schottky b...

Hetero-junction field effect transistor having an intermediate layer