Kenya Kobayashi

Person

Kawasaki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 8,592,896
- Issue date Nov 26, 2013
- Renesas Electronics Corporation
- Yoshimitsu Murase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having vertical MOSFET
- Patent number 8,361,865
- Issue date Jan 29, 2013
- Renesas Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET semiconductor apparatus having separate base...
- Patent number 8,314,460
- Issue date Nov 20, 2012
- Renesas Electronics Corporation
- Kinya Ohtani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 8,310,005
- Issue date Nov 13, 2012
- Renesas Electronics Corporation
- Yoshimitsu Murase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET semiconductor apparatus having separate base...
- Patent number 8,222,690
- Issue date Jul 17, 2012
- Renesas Electronics Corporation
- Kinya Ohtani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having vertical type MOSFET and manufacturing...
- Patent number 8,173,508
- Issue date May 8, 2012
- Renesas Electronics Corporation
- Wataru Sumida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 8,072,026
- Issue date Dec 6, 2011
- Renesas Electronics Corporation
- Yoshimitsu Murase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having trench gate structure
- Patent number 7,956,409
- Issue date Jun 7, 2011
- Renesas Electronics Corporation
- Hideo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor apparatus
- Patent number 7,947,556
- Issue date May 24, 2011
- Renesas Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having vertical MOSFET
- Patent number 7,893,489
- Issue date Feb 22, 2011
- Renesas Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and method for manufacturing same
- Patent number 7,867,857
- Issue date Jan 11, 2011
- Renesas Electronics Corporation
- Takayoshi Andou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor apparatus
- Patent number 7,776,693
- Issue date Aug 17, 2010
- NEC Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral planar type power semiconductor device including drain buri...
- Patent number 7,750,402
- Issue date Jul 6, 2010
- NEC Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 7,704,827
- Issue date Apr 27, 2010
- NEC Electronics Corporation
- Yoshimitsu Murase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor
- Patent number 7,705,408
- Issue date Apr 27, 2010
- NEC Electronics Corporation
- Hideo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a trench surr...
- Patent number 7,666,744
- Issue date Feb 23, 2010
- NEC Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,645,661
- Issue date Jan 12, 2010
- NEC Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and semiconductor device
- Patent number 7,622,351
- Issue date Nov 24, 2009
- NEC Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor cell array with unit cells having adjacently surround...
- Patent number 7,521,754
- Issue date Apr 21, 2009
- NEC Electronics Corporation
- Kinya Ohtani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with vertical MOSFET and method of manufacturi...
- Patent number 7,508,030
- Issue date Mar 24, 2009
- NEC Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a trench surrounding each of plural uni...
- Patent number 7,429,768
- Issue date Sep 30, 2008
- NEC Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,332,770
- Issue date Feb 19, 2008
- NEC Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical MOSFET reduced in cell size and method of producing the same
- Patent number 6,888,196
- Issue date May 3, 2005
- NEC Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a trench isolation
- Patent number 6,872,631
- Issue date Mar 29, 2005
- NEC Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a trench isolation
- Patent number 6,838,356
- Issue date Jan 4, 2005
- NEC Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device of high-voltage CMOS s...
- Patent number 6,638,798
- Issue date Oct 28, 2003
- NEC Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with SOI structure and method of manufacturing...
- Patent number 6,541,314
- Issue date Apr 1, 2003
- NEC Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with SOI structure and method of manufacturing...
- Patent number 6,492,683
- Issue date Dec 10, 2002
- NEC Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device of high-voltage CMOS structure and method of f...
- Patent number 6,313,508
- Issue date Nov 6, 2001
- NEC Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric separate type semiconductor device
- Patent number 6,278,156
- Issue date Aug 21, 2001
- NEC Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20130062689
- Publication date Mar 14, 2013
- RENESAS ELECTRONICS CORPORATION
- Yoshimitsu MURASE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20120043604
- Publication date Feb 23, 2012
- RENESAS ELECTRONICS CORPORATION
- Yoshimitsu MURASE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having vertical mosfet and method of manufactu...
- Publication number 20110081756
- Publication date Apr 7, 2011
- RENESAS ELECTRONICS CORPORATION
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor apparatus and manufacturing method thereof
- Publication number 20110024832
- Publication date Feb 3, 2011
- NEC ELECTRONICS CORPORATION
- Kinya Ohtani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor apparatus
- Publication number 20100267211
- Publication date Oct 21, 2010
- NEC Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20100171172
- Publication date Jul 8, 2010
- NEC Electronics Corporation
- Yoshimitsu Murase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having vertical type MOSFET and manufacturing...
- Publication number 20100155833
- Publication date Jun 24, 2010
- NEC Electronic Corporation
- Wataru Sumida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical power MOSFET semiconductor apparatus having separate base...
- Publication number 20100038710
- Publication date Feb 18, 2010
- NEC Electronis Corporation
- Kinaya Ohtani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20090179260
- Publication date Jul 16, 2009
- NEC ELECTRONICS CORPORATION
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having trench gate structure
- Publication number 20090072300
- Publication date Mar 19, 2009
- NEC Electronics Corporation
- Hideo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A TRENCH SURR...
- Publication number 20080274599
- Publication date Nov 6, 2008
- NEC ELECTRONICS CORPORATION
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having vertical MOSFET and method of manufactu...
- Publication number 20080265314
- Publication date Oct 30, 2008
- NEC Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20080135921
- Publication date Jun 12, 2008
- NEC Electronics Corporation
- Yoshimitsu Murase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND METHOD FOR MANUFACTURING SAME
- Publication number 20080111168
- Publication date May 15, 2008
- NEC Electronics Corporation
- Takayoshi ANDOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20080085586
- Publication date Apr 10, 2008
- NEC Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor apparatus
- Publication number 20080081422
- Publication date Apr 3, 2008
- NEC Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20080067625
- Publication date Mar 20, 2008
- NEC Electronics Corporation
- Hideo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor apparatus and manufacturing method thereof
- Publication number 20070045700
- Publication date Mar 1, 2007
- NEC Electronics Corporation
- Kinya Ohtani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060244054
- Publication date Nov 2, 2006
- NEC Electronics Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical field effect transistor
- Publication number 20060226475
- Publication date Oct 12, 2006
- NEC Electronics Corporation
- Hideo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060214240
- Publication date Sep 28, 2006
- NEC Electronics Corporation
- Kinya Ohtani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20060091457
- Publication date May 4, 2006
- NEC ELECTRONICS CORPORATION
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20050139873
- Publication date Jun 30, 2005
- NEC ELECTRONICS CORPORATION
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral planar type power semiconductor device including drain buri...
- Publication number 20050045946
- Publication date Mar 3, 2005
- NEC ELECTRONICS CORPORATION
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical MOSFET reduced in cell size and method of producing the same
- Publication number 20040021174
- Publication date Feb 5, 2004
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a trench isolation
- Publication number 20040018736
- Publication date Jan 29, 2004
- NEC ELECTRONICS CORPORATION
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with SOI structure and method of manufacturing...
- Publication number 20020171109
- Publication date Nov 21, 2002
- NEC Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE OF HIGH-VOLTAGE CMOS S...
- Publication number 20020048914
- Publication date Apr 25, 2002
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with SOI structure and method of manufacturing...
- Publication number 20020036330
- Publication date Mar 28, 2002
- NEC Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a trench isolation
- Publication number 20020034858
- Publication date Mar 21, 2002
- NEC Corporation
- Kenya Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS

Kenya Kobayashi

Person

Patents Grantslast 30 patents

Semiconductor device and method for manufacturing the same

Method of manufacturing a semiconductor device having vertical MOSFET

Vertical power MOSFET semiconductor apparatus having separate base...

Semiconductor device and method for manufacturing the same

Vertical power MOSFET semiconductor apparatus having separate base...

Semiconductor device having vertical type MOSFET and manufacturing...

Semiconductor device and method for manufacturing the same

Semiconductor device having trench gate structure

Method of manufacturing semiconductor apparatus

Semiconductor device having vertical MOSFET

Transistor and method for manufacturing same

Method of manufacturing semiconductor apparatus

Lateral planar type power semiconductor device including drain buri...

Semiconductor device and method for manufacturing the same

Vertical field effect transistor

Method of manufacturing a semiconductor device having a trench surr...

Semiconductor device

Method of manufacturing semiconductor device and semiconductor device

Semiconductor cell array with unit cells having adjacently surround...

Semiconductor device with vertical MOSFET and method of manufacturi...

Semiconductor device having a trench surrounding each of plural uni...

Semiconductor device

Vertical MOSFET reduced in cell size and method of producing the same

Method of forming a trench isolation

Method of forming a trench isolation

Method of fabricating a semiconductor device of high-voltage CMOS s...

Semiconductor device with SOI structure and method of manufacturing...

Semiconductor device with SOI structure and method of manufacturing...

Semiconductor device of high-voltage CMOS structure and method of f...

Dielectric separate type semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Semiconductor device and method for manufacturing the same

Semiconductor device having vertical mosfet and method of manufactu...

Semiconductor apparatus and manufacturing method thereof

Method of manufacturing semiconductor apparatus

Semiconductor device and method for manufacturing the same

Semiconductor device having vertical type MOSFET and manufacturing...

Vertical power MOSFET semiconductor apparatus having separate base...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Semiconductor device having trench gate structure

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A TRENCH SURR...

Semiconductor device having vertical MOSFET and method of manufactu...

Semiconductor device and method for manufacturing the same

TRANSISTOR AND METHOD FOR MANUFACTURING SAME

Semiconductor device

Method of manufacturing semiconductor apparatus

Semiconductor device

Semiconductor apparatus and manufacturing method thereof

Semiconductor device

Vertical field effect transistor

Semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Lateral planar type power semiconductor device including drain buri...

Vertical MOSFET reduced in cell size and method of producing the same

Method of forming a trench isolation

Semiconductor device with SOI structure and method of manufacturing...

METHOD OF FABRICATING A SEMICONDUCTOR DEVICE OF HIGH-VOLTAGE CMOS S...

Semiconductor device with SOI structure and method of manufacturing...

Method of forming a trench isolation