Keren Jacobs Kanarik

Person

Los Altos, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Plasma etching chemistries of high aspect ratio features in dielect...
- Patent number 12,119,243
- Issue date Oct 15, 2024
- Lam Research Corporation
- Keren J. Kanarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Designer atomic layer etching
- Patent number 11,721,558
- Issue date Aug 8, 2023
- Lam Research Corporation
- Keren Jacobs Kanarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching chemistries of high aspect ratio features in dielect...
- Patent number 11,594,429
- Issue date Feb 28, 2023
- Lam Research Corporation
- Keren J. Kanarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer etching and smoothing of refractory metals and other h...
- Patent number 11,450,513
- Issue date Sep 20, 2022
- Lam Research Corporation
- Wenbing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Designer atomic layer etching
- Patent number 11,239,094
- Issue date Feb 1, 2022
- Lam Research Corporation
- Keren Jacobs Kanarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer etch of tungsten for enhanced tungsten deposition fill
- Patent number 11,069,535
- Issue date Jul 20, 2021
- Lam Research Corporation
- Chiukin Steven Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High energy atomic layer etching
- Patent number 10,763,083
- Issue date Sep 1, 2020
- Lam Research Corporation
- Wenbing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer etching 3D structures: Si and SiGe and Ge smoothness o...
- Patent number 10,727,073
- Issue date Jul 28, 2020
- Lam Research Corporation
- Samantha Tan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Designer atomic layer etching
- Patent number 10,566,212
- Issue date Feb 18, 2020
- Lam Research Corporation
- Keren Jacobs Kanarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer etching of tantalum
- Patent number 10,566,213
- Issue date Feb 18, 2020
- Lam Research Corporation
- Keren Jacobs Kanarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating atomic scale processes: ALD (atomic layer deposition) a...
- Patent number 10,515,816
- Issue date Dec 24, 2019
- Lam Research Corporation
- Keren Jacobs Kanarik
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ale smoothness: in and outside semiconductor industry
- Patent number 10,304,659
- Issue date May 28, 2019
- Lam Research Corporation
- Keren Jacobs Kanarik
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrating atomic scale processes: ALD (atomic layer deposition) a...
- Patent number 10,186,426
- Issue date Jan 22, 2019
- Lam Research Corporation
- Keren Jacobs Kanarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mixed mode pulsing etching in plasma processing systems
- Patent number 10,121,639
- Issue date Nov 6, 2018
- Lam Research Corporation
- Keren Jacobs Kanarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer etching of tungsten and other metals
- Patent number 10,096,487
- Issue date Oct 9, 2018
- Lam Research Corporation
- Wenbing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer etching of GaN and other III-V materials
- Patent number 10,056,264
- Issue date Aug 21, 2018
- Lam Research Corporation
- Wenbing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ALE smoothness: in and outside semiconductor industry
- Patent number 9,984,858
- Issue date May 29, 2018
- Lam Research Corporation
- Keren Jacobs Kanarik
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Atomic layer etching of tungsten for enhanced tungsten deposition fill
- Patent number 9,972,504
- Issue date May 15, 2018
- Lam Research Corporation
- Chiukin Steven Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer etching for enhanced bottom-up feature fill
- Patent number 9,837,312
- Issue date Dec 5, 2017
- Lam Research Corporation
- Samantha Tan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrating atomic scale processes: ALD (atomic layer deposition) a...
- Patent number 9,805,941
- Issue date Oct 31, 2017
- Lam Research Corporation
- Keren Jacobs Kanarik
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Inert-dominant pulsing in plasma processing systems
- Patent number 9,583,316
- Issue date Feb 28, 2017
- Lam Research Corporation
- Keren Jacobs Kanarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating atomic scale processes: ALD (atomic layer deposition) a...
- Patent number 9,576,811
- Issue date Feb 21, 2017
- Lam Research Corporation
- Keren Jacobs Kanarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mixed mode pulsing etching in plasma processing systems
- Patent number 9,425,025
- Issue date Aug 23, 2016
- Lam Research Corporation
- Keren Jacobs Kanarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inert-dominant pulsing in plasma processing systems
- Patent number 9,214,320
- Issue date Dec 15, 2015
- Lam Research Corporation
- Keren Jacobs Kanarik
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Mixed mode pulsing etching in plasma processing systems
- Patent number 8,883,028
- Issue date Nov 11, 2014
- Lam Research Corporation
- Keren Jacobs Kanarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inert-dominant pulsing in plasma processing systems
- Patent number 8,808,561
- Issue date Aug 19, 2014
- Lam Research Coporation
- Keren Jacobs Kanarik
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Etch tool process indicator method and apparatus
- Patent number 8,492,174
- Issue date Jul 23, 2013
- Lam Research Corporation
- Keren Jacobs Kanarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch tool process indicator method and apparatus
- Patent number 8,206,996
- Issue date Jun 26, 2012
- Lam Research Corporation
- Keren Jacobs Kanarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for wafer temperature verification in etch tools
- Patent number 7,951,616
- Issue date May 31, 2011
- Lam Research Corporation
- Keren J. Kanarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photoresist conditioning with hydrogen ramping
- Patent number 7,682,480
- Issue date Mar 23, 2010
- Lam Research Corporation
- Keren Jacobs Kanarik
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH ENERGY ATOMIC LAYER ETCHING
- Publication number 20240274408
- Publication date Aug 15, 2024
- LAM RESEARCH CORPORATION
- Wenbing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECT...
- Publication number 20240258127
- Publication date Aug 1, 2024
- LAM RESEARCH CORPORATION
- Keren J. KANARIK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECT...
- Publication number 20240258128
- Publication date Aug 1, 2024
- LAM RESEARCH CORPORATION
- Keren J. KANARIK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECT...
- Publication number 20240203759
- Publication date Jun 20, 2024
- LAM RESEARCH CORPORATION
- Keren J. KANARIK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECT...
- Publication number 20240203760
- Publication date Jun 20, 2024
- LAM RESEARCH CORPORATION
- Keren J. KANARIK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECT...
- Publication number 20240178014
- Publication date May 30, 2024
- LAM RESEARCH CORPORATION
- Keren J. KANARIK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECT...
- Publication number 20230187234
- Publication date Jun 15, 2023
- LAM RESEARCH CORPORATION
- Keren J. KANARIK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER ETCHING AND SMOOTHING OF REFRACTORY METALS AND OTHER H...
- Publication number 20220392747
- Publication date Dec 8, 2022
- LAM RESEARCH CORPORATION
- Wenbing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER ETCHING OF TUNGSTEN FOR ENHANCED TUNGSTEN DEPOSITION FILL
- Publication number 20220115244
- Publication date Apr 14, 2022
- LAM RESEARCH CORPORATION
- Chiukin Steven LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGNER ATOMIC LAYER ETCHING
- Publication number 20220093413
- Publication date Mar 24, 2022
- LAM RESEARCH CORPORATION
- Keren Jacobs Kanarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER ETCHING OF TUNGSTEN FOR ENHANCED TUNGSTEN DEPOSITION FILL
- Publication number 20210305059
- Publication date Sep 30, 2021
- LAM RESEARCH CORPORATION
- Chiukin Steven Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECT...
- Publication number 20210005472
- Publication date Jan 7, 2021
- LAM RESEARCH CORPORATION
- Keren J. KANARIK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER ETCHING AND SMOOTHING OF REFRACTORY METALS AND OTHER H...
- Publication number 20210005425
- Publication date Jan 7, 2021
- LAM RESEARCH CORPORATION
- Wenbing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ENERGY ATOMIC LAYER ETCHING
- Publication number 20200402770
- Publication date Dec 24, 2020
- LAM RESEARCH CORPORATION
- Wenbing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER ETCH OF TUNGSTEN FOR ENHANCED TUNGSTEN DEPOSITION FILL
- Publication number 20200286743
- Publication date Sep 10, 2020
- LAM RESEARCH CORPORATION
- Chiukin Steven Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING ATOMIC SCALE PROCESSES: ALD (ATOMIC LAYER DEPOSITION) A...
- Publication number 20200161139
- Publication date May 21, 2020
- LAM RESEARCH CORPORATION
- Keren Jacobs Kanarik
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DESIGNER ATOMIC LAYER ETCHING
- Publication number 20200118835
- Publication date Apr 16, 2020
- LAM RESEARCH CORPORATION
- Keren Jacobs Kanarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING ATOMIC SCALE PROCESSES: ALD (ATOMIC LAYER DEPOSITION) A...
- Publication number 20190139778
- Publication date May 9, 2019
- LAM RESEARCH CORPORATION
- Keren Jacobs Kanarik
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HIGH ENERGY ATOMIC LAYER ETCHING
- Publication number 20190108982
- Publication date Apr 11, 2019
- LAM RESEARCH CORPORATION
- Wenbing Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER ETCHING OF TANTALUM
- Publication number 20180350624
- Publication date Dec 6, 2018
- LAM RESEARCH CORPORATION
- Keren Jacobs Kanarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER ETCH OF TUNGSTEN FOR ENHANCED TUNGSTEN DEPOSITION FILL
- Publication number 20180240682
- Publication date Aug 23, 2018
- LAM RESEARCH CORPORATION
- Chiukin Steven Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALE SMOOTHNESS: IN AND OUTSIDE SEMICONDUCTOR INDUSTRY
- Publication number 20180233325
- Publication date Aug 16, 2018
- LAM RESEARCH CORPORATION
- Keren Jacobs Kanarik
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DESIGNER ATOMIC LAYER ETCHING
- Publication number 20180174860
- Publication date Jun 21, 2018
- LAM RESEARCH CORPORATION
- Keren Jacobs Kanarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING ATOMIC SCALE PROCESSES: ALD (ATOMIC LAYER DEPOSITION) A...
- Publication number 20180033635
- Publication date Feb 1, 2018
- LAM RESEARCH CORPORATION
- Keren Jacobs Kanarik
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ATOMIC LAYER ETCHING 3D STRUCTURES: SI AND SIGE AND GE SMOOTHNESS O...
- Publication number 20170229314
- Publication date Aug 10, 2017
- LAM RESEARCH CORPORATION
- Samantha Tan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATING ATOMIC SCALE PROCESSES: ALD (ATOMIC LAYER DEPOSITION) A...
- Publication number 20170117159
- Publication date Apr 27, 2017
- LAM RESEARCH CORPORATION
- Keren Jacobs Kanarik
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ALE SMOOTHNESS: IN AND OUTSIDE SEMICONDUCTOR INDUSTRY
- Publication number 20170069462
- Publication date Mar 9, 2017
- LAM RESEARCH CORPORATION
- Keren Jacobs Kanarik
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ATOMIC LAYER ETCHING OF TUNGSTEN AND OTHER METALS
- Publication number 20170053810
- Publication date Feb 23, 2017
- LAM RESEARCH CORPORATION
- Wenbing Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ATOMIC LAYER ETCHING OF TUNGSTEN FOR ENHANCED TUNGSTEN DEPOSITION FILL
- Publication number 20170040214
- Publication date Feb 9, 2017
- LAM RESEARCH CORPORATION
- Chiukin Steven Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER ETCHING OF GaN AND OTHER III-V MATERIALS
- Publication number 20160358782
- Publication date Dec 8, 2016
- LAM RESEARCH CORPORATION
- Wenbing Yang
- H01 - BASIC ELECTRIC ELEMENTS

Keren Jacobs Kanarik

Person

Patents Grantslast 30 patents

Plasma etching chemistries of high aspect ratio features in dielect...

Designer atomic layer etching

Plasma etching chemistries of high aspect ratio features in dielect...

Atomic layer etching and smoothing of refractory metals and other h...

Designer atomic layer etching

Atomic layer etch of tungsten for enhanced tungsten deposition fill

High energy atomic layer etching

Atomic layer etching 3D structures: Si and SiGe and Ge smoothness o...

Designer atomic layer etching

Atomic layer etching of tantalum

Integrating atomic scale processes: ALD (atomic layer deposition) a...

Ale smoothness: in and outside semiconductor industry

Integrating atomic scale processes: ALD (atomic layer deposition) a...

Mixed mode pulsing etching in plasma processing systems

Atomic layer etching of tungsten and other metals

Atomic layer etching of GaN and other III-V materials

ALE smoothness: in and outside semiconductor industry

Atomic layer etching of tungsten for enhanced tungsten deposition fill

Atomic layer etching for enhanced bottom-up feature fill

Integrating atomic scale processes: ALD (atomic layer deposition) a...

Inert-dominant pulsing in plasma processing systems

Integrating atomic scale processes: ALD (atomic layer deposition) a...

Mixed mode pulsing etching in plasma processing systems

Inert-dominant pulsing in plasma processing systems

Mixed mode pulsing etching in plasma processing systems

Inert-dominant pulsing in plasma processing systems

Etch tool process indicator method and apparatus

Etch tool process indicator method and apparatus

Process for wafer temperature verification in etch tools

Photoresist conditioning with hydrogen ramping

Patents Applicationslast 30 patents

HIGH ENERGY ATOMIC LAYER ETCHING

PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECT...

PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECT...

PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECT...

PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECT...

PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECT...

PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECT...

ATOMIC LAYER ETCHING AND SMOOTHING OF REFRACTORY METALS AND OTHER H...

ATOMIC LAYER ETCHING OF TUNGSTEN FOR ENHANCED TUNGSTEN DEPOSITION FILL

DESIGNER ATOMIC LAYER ETCHING

ATOMIC LAYER ETCHING OF TUNGSTEN FOR ENHANCED TUNGSTEN DEPOSITION FILL

PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECT...

ATOMIC LAYER ETCHING AND SMOOTHING OF REFRACTORY METALS AND OTHER H...

HIGH ENERGY ATOMIC LAYER ETCHING

ATOMIC LAYER ETCH OF TUNGSTEN FOR ENHANCED TUNGSTEN DEPOSITION FILL

INTEGRATING ATOMIC SCALE PROCESSES: ALD (ATOMIC LAYER DEPOSITION) A...

DESIGNER ATOMIC LAYER ETCHING

INTEGRATING ATOMIC SCALE PROCESSES: ALD (ATOMIC LAYER DEPOSITION) A...

HIGH ENERGY ATOMIC LAYER ETCHING

ATOMIC LAYER ETCHING OF TANTALUM

ATOMIC LAYER ETCH OF TUNGSTEN FOR ENHANCED TUNGSTEN DEPOSITION FILL

ALE SMOOTHNESS: IN AND OUTSIDE SEMICONDUCTOR INDUSTRY

DESIGNER ATOMIC LAYER ETCHING

INTEGRATING ATOMIC SCALE PROCESSES: ALD (ATOMIC LAYER DEPOSITION) A...

ATOMIC LAYER ETCHING 3D STRUCTURES: SI AND SIGE AND GE SMOOTHNESS O...

INTEGRATING ATOMIC SCALE PROCESSES: ALD (ATOMIC LAYER DEPOSITION) A...

ALE SMOOTHNESS: IN AND OUTSIDE SEMICONDUCTOR INDUSTRY

ATOMIC LAYER ETCHING OF TUNGSTEN AND OTHER METALS

ATOMIC LAYER ETCHING OF TUNGSTEN FOR ENHANCED TUNGSTEN DEPOSITION FILL

ATOMIC LAYER ETCHING OF GaN AND OTHER III-V MATERIALS