Keumseok PARK

Person

Slingerlands, NY, US

People

Patents Applicationslast 30 patents

Information Patent Application
NOBLE FORMATION METHOD OF CMOS FOR 3D STACKED FET WITH BSPDN
- Publication number 20240413213
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Keumseok PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGIONS VERT...
- Publication number 20240379780
- Publication date Nov 14, 2024
- Samsung Electronics Co., Ltd.
- Keumseok PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHOD...
- Publication number 20240332131
- Publication date Oct 3, 2024
- Samsung Electronics Co., Ltd.
- JINTAE KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3DSFET DEVICE INCLUDING RESTRUCTURED LOWER SOURCE/DRAIN REGION HAVI...
- Publication number 20240304669
- Publication date Sep 12, 2024
- Samsung Electronics Co., Ltd.
- Keumseok Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BACKSIDE CONTACT STRUCTURE
- Publication number 20240290689
- Publication date Aug 29, 2024
- Samsung Electronics Co., Ltd.
- Seungchan YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTO...
- Publication number 20240136354
- Publication date Apr 25, 2024
- Samsung Electronics Co., Ltd.
- KEUMSEOK PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHOD...
- Publication number 20240072048
- Publication date Feb 29, 2024
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STACKS HAVING SPACERS, AND RELATED FABRICATION METHODS
- Publication number 20230395659
- Publication date Dec 7, 2023
- Samsung Electronics Co., Ltd.
- Keumseok Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE HAVING DIFFERENT CHANNEL AND GATE D...
- Publication number 20230352528
- Publication date Nov 2, 2023
- Samsung Electronics Co., Ltd.
- Keumseok PARK
- H01 - BASIC ELECTRIC ELEMENTS

Keumseok PARK

Person

Patents Applicationslast 30 patents

NOBLE FORMATION METHOD OF CMOS FOR 3D STACKED FET WITH BSPDN

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGIONS VERT...

INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHOD...

3DSFET DEVICE INCLUDING RESTRUCTURED LOWER SOURCE/DRAIN REGION HAVI...

SEMICONDUCTOR DEVICE INCLUDING BACKSIDE CONTACT STRUCTURE

INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTO...

INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHOD...

TRANSISTOR STACKS HAVING SPACERS, AND RELATED FABRICATION METHODS

3D-STACKED SEMICONDUCTOR DEVICE HAVING DIFFERENT CHANNEL AND GATE D...