Kevin K. Chan

Person

Staten Island, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multi-terminal cross-point synaptic device using nanocrystal dot st...
- Patent number 11,195,089
- Issue date Dec 7, 2021
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 11,145,658
- Issue date Oct 12, 2021
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 11,107,821
- Issue date Aug 31, 2021
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 11,056,493
- Issue date Jul 6, 2021
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
III-V extension by high temperature plasma doping
- Patent number 11,018,225
- Issue date May 25, 2021
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-forming spacers using oxidation
- Patent number 10,833,156
- Issue date Nov 10, 2020
- ELPIS TECHNOLOGIES INC.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistor with abrupt junction and compou...
- Patent number 10,727,299
- Issue date Jul 28, 2020
- ELPIS TECHNOLOGIES INC.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of FinFET junction
- Patent number 10,658,513
- Issue date May 19, 2020
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-forming spacers using oxidation
- Patent number 10,566,417
- Issue date Feb 18, 2020
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures including an integrated FinFET with deep t...
- Patent number 10,535,662
- Issue date Jan 14, 2020
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Lateral bipolar junction transistor with abrupt junction and compou...
- Patent number 10,396,154
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned trench metal-alloying for III-V nFETs
- Patent number 10,366,918
- Issue date Jul 30, 2019
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 10,361,207
- Issue date Jul 23, 2019
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Plasma shallow doping and wet removal of depth control cap
- Patent number 10,276,384
- Issue date Apr 30, 2019
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 10,269,806
- Issue date Apr 23, 2019
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Formation of FinFET junction
- Patent number 10,236,384
- Issue date Mar 19, 2019
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator lateral heterojunction bipolar transisto...
- Patent number 10,236,366
- Issue date Mar 19, 2019
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistor with abrupt junction and compou...
- Patent number 10,141,405
- Issue date Nov 27, 2018
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V MOSFET with self-aligned diffusion barrier
- Patent number 10,128,343
- Issue date Nov 13, 2018
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with carbon alloyed contacts
- Patent number 10,079,278
- Issue date Sep 18, 2018
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium lateral bipolar transistor with silicon passivation
- Patent number 10,074,734
- Issue date Sep 11, 2018
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-forming spacers using oxidation
- Patent number 10,068,967
- Issue date Sep 4, 2018
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 10,050,039
- Issue date Aug 14, 2018
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Contact resistance reduction by III-V Ga deficient surface
- Patent number 10,043,711
- Issue date Aug 7, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 10,042,968
- Issue date Aug 7, 2018
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
High-density EEPROM arrays having parallel-connected common-floatin...
- Patent number 9,947,677
- Issue date Apr 17, 2018
- International Business Machines Corporation
- Kevin K. Chan
- G11 - INFORMATION STORAGE
Information Patent Grant
III-V MOSFET with self-aligned diffusion barrier
- Patent number 9,947,755
- Issue date Apr 17, 2018
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator lateral heterojunction bipolar transisto...
- Patent number 9,887,278
- Issue date Feb 6, 2018
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of FinFET junction
- Patent number 9,865,737
- Issue date Jan 9, 2018
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V MOSFET with self-aligned diffusion barrier
- Patent number 9,853,109
- Issue date Dec 26, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REGULATED MOBILE ION SYNAPSES
- Publication number 20240186386
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Jin Ping Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-FORMING SPACERS USING OXIDATION
- Publication number 20200075714
- Publication date Mar 5, 2020
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20200051984
- Publication date Feb 13, 2020
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MULTI-TERMINAL CROSS-POINT SYNAPTIC DEVICE USING NANOCRYSTAL DOT ST...
- Publication number 20200005129
- Publication date Jan 2, 2020
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTOR WITH ABRUPT JUNCTION AND COMPOU...
- Publication number 20190326397
- Publication date Oct 24, 2019
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED TRENCH METAL-ALLOYING FOR III-V NFETS
- Publication number 20190311945
- Publication date Oct 10, 2019
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20190279987
- Publication date Sep 12, 2019
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20190206871
- Publication date Jul 4, 2019
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FORMATION OF FINFET JUNCTION
- Publication number 20190157458
- Publication date May 23, 2019
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTOR WITH ABRUPT JUNCTION AND COMPOU...
- Publication number 20190043945
- Publication date Feb 7, 2019
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-FORMING SPACERS USING OXIDATION
- Publication number 20180294334
- Publication date Oct 11, 2018
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20180286866
- Publication date Oct 4, 2018
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20180225405
- Publication date Aug 9, 2018
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP
- Publication number 20180218908
- Publication date Aug 2, 2018
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP
- Publication number 20180218909
- Publication date Aug 2, 2018
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP
- Publication number 20180218907
- Publication date Aug 2, 2018
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V MOSFET WITH SELF-ALIGNED DIFFUSION BARRIER
- Publication number 20180197961
- Publication date Jul 12, 2018
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF FINFET JUNCTION
- Publication number 20180108778
- Publication date Apr 19, 2018
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR LATERAL HETEROJUNCTION BIPOLAR TRANSISTO...
- Publication number 20180108763
- Publication date Apr 19, 2018
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE REDUCTION BY III-V Ga DEFICIENT SURFACE
- Publication number 20180096893
- Publication date Apr 5, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED TRENCH METAL-ALLOYING FOR III-V NFETS
- Publication number 20180096885
- Publication date Apr 5, 2018
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM LATERAL BIPOLAR TRANSISTOR WITH SILICON PASSIVATION
- Publication number 20180040723
- Publication date Feb 8, 2018
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V EXTENSION BY HIGH TEMPERATURE PLASMA DOPING
- Publication number 20170373149
- Publication date Dec 28, 2017
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTOR WITH ABRUPT JUNCTION AND COMPOU...
- Publication number 20170301755
- Publication date Oct 19, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTOR WITH ABRUPT JUNCTION AND COMPOU...
- Publication number 20170301756
- Publication date Oct 19, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-FORMING SPACERS USING OXIDATION
- Publication number 20170263702
- Publication date Sep 14, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20170117281
- Publication date Apr 27, 2017
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR LATERAL HETEROJUNCTION BIPOLAR TRANSISTO...
- Publication number 20170092749
- Publication date Mar 30, 2017
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V MOSFET WITH SELF-ALIGNED DIFFUSION BARRIER
- Publication number 20170092722
- Publication date Mar 30, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V MOSFET WITH SELF-ALIGNED DIFFUSION BARRIER
- Publication number 20170092727
- Publication date Mar 30, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS

Kevin K. Chan

Person

Patents Grantslast 30 patents

Multi-terminal cross-point synaptic device using nanocrystal dot st...

Semiconductor structures with deep trench capacitor and methods of...

Semiconductor structures with deep trench capacitor and methods of...

Semiconductor structures with deep trench capacitor and methods of...

III-V extension by high temperature plasma doping

Self-forming spacers using oxidation

Lateral bipolar junction transistor with abrupt junction and compou...

Formation of FinFET junction

Self-forming spacers using oxidation

Semiconductor structures including an integrated FinFET with deep t...

Lateral bipolar junction transistor with abrupt junction and compou...

Self-aligned trench metal-alloying for III-V nFETs

Semiconductor structures with deep trench capacitor and methods of...

Plasma shallow doping and wet removal of depth control cap

Semiconductor structures with deep trench capacitor and methods of...

Formation of FinFET junction

Semiconductor-on-insulator lateral heterojunction bipolar transisto...

Lateral bipolar junction transistor with abrupt junction and compou...

III-V MOSFET with self-aligned diffusion barrier

Bipolar transistor with carbon alloyed contacts

Germanium lateral bipolar transistor with silicon passivation

Self-forming spacers using oxidation

Semiconductor structures with deep trench capacitor and methods of...

Contact resistance reduction by III-V Ga deficient surface

Semiconductor structures with deep trench capacitor and methods of...

High-density EEPROM arrays having parallel-connected common-floatin...

III-V MOSFET with self-aligned diffusion barrier

Semiconductor-on-insulator lateral heterojunction bipolar transisto...

Formation of FinFET junction

III-V MOSFET with self-aligned diffusion barrier

Patents Applicationslast 30 patents

REGULATED MOBILE ION SYNAPSES

SELF-FORMING SPACERS USING OXIDATION

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

MULTI-TERMINAL CROSS-POINT SYNAPTIC DEVICE USING NANOCRYSTAL DOT ST...

LATERAL BIPOLAR JUNCTION TRANSISTOR WITH ABRUPT JUNCTION AND COMPOU...

SELF-ALIGNED TRENCH METAL-ALLOYING FOR III-V NFETS

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

FORMATION OF FINFET JUNCTION

LATERAL BIPOLAR JUNCTION TRANSISTOR WITH ABRUPT JUNCTION AND COMPOU...

SELF-FORMING SPACERS USING OXIDATION

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP

PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP

PLASMA SHALLOW DOPING AND WET REMOVAL OF DEPTH CONTROL CAP

III-V MOSFET WITH SELF-ALIGNED DIFFUSION BARRIER

FORMATION OF FINFET JUNCTION

SEMICONDUCTOR-ON-INSULATOR LATERAL HETEROJUNCTION BIPOLAR TRANSISTO...

CONTACT RESISTANCE REDUCTION BY III-V Ga DEFICIENT SURFACE

SELF-ALIGNED TRENCH METAL-ALLOYING FOR III-V NFETS

GERMANIUM LATERAL BIPOLAR TRANSISTOR WITH SILICON PASSIVATION

III-V EXTENSION BY HIGH TEMPERATURE PLASMA DOPING

LATERAL BIPOLAR JUNCTION TRANSISTOR WITH ABRUPT JUNCTION AND COMPOU...

LATERAL BIPOLAR JUNCTION TRANSISTOR WITH ABRUPT JUNCTION AND COMPOU...

SELF-FORMING SPACERS USING OXIDATION

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

SEMICONDUCTOR-ON-INSULATOR LATERAL HETEROJUNCTION BIPOLAR TRANSISTO...

III-V MOSFET WITH SELF-ALIGNED DIFFUSION BARRIER

III-V MOSFET WITH SELF-ALIGNED DIFFUSION BARRIER