Kevin O'Brien

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transition metal dichalcogenide nanowires and methods of fabrication
- Patent number 12,176,388
- Issue date Dec 24, 2024
- Intel Corporation
- Kevin O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide (TMD) layer stack for transistor ap...
- Patent number 12,125,895
- Issue date Oct 22, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic assemblies with inductors in direct bonding regions
- Patent number 12,107,060
- Issue date Oct 1, 2024
- Intel Corproation
- Adel A. Elsherbini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic assemblies with inductors in direct bonding regions
- Patent number 12,062,631
- Issue date Aug 13, 2024
- Intel Corporation
- Adel A Elsherbini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TMD inverted nanowire integration
- Patent number 11,935,956
- Issue date Mar 19, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-transfer spacers for stacked nanoribbon 2D transistors
- Patent number 11,908,950
- Issue date Feb 20, 2024
- Intel Corporation
- Kirby Maxey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device structures and double-sided electrical te...
- Patent number 11,854,894
- Issue date Dec 26, 2023
- Intel Corporation
- Valluri R. Rao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit memory devices with dual electrodes, and methods of fabr...
- Patent number 11,683,939
- Issue date Jun 20, 2023
- Intel Corporation
- Benjamin Buford
Information Patent Grant
Ferroelectric field effect transistors (FeFETs) having band-enginee...
- Patent number 11,640,995
- Issue date May 2, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate metal and ferromagnetic metal multilayer interc...
- Patent number 11,605,592
- Issue date Mar 14, 2023
- Intel Corporation
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two terminal spin orbit memory devices and methods of fabrication
- Patent number 11,594,673
- Issue date Feb 28, 2023
- Intel Corporation
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit torque device with insertion layer between spin orbit to...
- Patent number 11,508,903
- Issue date Nov 22, 2022
- Intel Corporation
- Angeline Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular exchange bias with antiferromagnet for spin orbit cou...
- Patent number 11,476,412
- Issue date Oct 18, 2022
- Intel Corporation
- Tanay Gosavi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular spin transfer torque memory (pSTTM) devices with enha...
- Patent number 11,462,678
- Issue date Oct 4, 2022
- Intel Corporation
- Kevin O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit torque (SOT) memory devices and methods of fabrication
- Patent number 11,444,237
- Issue date Sep 13, 2022
- Intel Corporation
- Noriyuki Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular spin transfer torque magnetic mechanism
- Patent number 11,437,567
- Issue date Sep 6, 2022
- Intel Corporation
- Justin Brockman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction (MTJ) devices with a synthetic antiferroma...
- Patent number 11,430,943
- Issue date Aug 30, 2022
- Intel Corporation
- Kevin O'Brien
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetically doped spin orbit torque electrode for perpendicular ma...
- Patent number 11,417,830
- Issue date Aug 16, 2022
- Intel Corporation
- Tanay Gosavi
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-aligned repeatedly stackable 3D vertical RRAM
- Patent number 11,404,482
- Issue date Aug 2, 2022
- Intel Corporation
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular spin transfer torque memory (pSTTM) devices with enha...
- Patent number 11,404,630
- Issue date Aug 2, 2022
- Intel Corporation
- Md Tofizur Rahman
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level magnetic tunnel junction (MTJ) devices including mobile...
- Patent number 11,386,951
- Issue date Jul 12, 2022
- Intel Corporation
- Kevin O'Brien
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-layer spin orbit torque electrodes for perpendicular magnetic...
- Patent number 11,374,164
- Issue date Jun 28, 2022
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit torque (SOT) memory devices and their methods of fabrica...
- Patent number 11,367,749
- Issue date Jun 21, 2022
- Intel Corporation
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit torque (SOT) memory devices and methods of fabrication
- Patent number 11,362,263
- Issue date Jun 14, 2022
- Intel Corporation
- Noriyuki Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin orbit torque (SOT) memory device with self-aligned contacts an...
- Patent number 11,348,970
- Issue date May 31, 2022
- Intel Corporation
- Kevin O'Brien
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular STTM multi-layer insert free layer
- Patent number 11,295,884
- Issue date Apr 5, 2022
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit torque memory devices and methods of fabrication
- Patent number 11,276,730
- Issue date Mar 15, 2022
- Intel Corporation
- Kevin O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit torque (SOT) memory devices with enhanced tunnel magneto...
- Patent number 11,257,613
- Issue date Feb 22, 2022
- Intel Corporation
- Kaan Oguz
- G11 - INFORMATION STORAGE
Information Patent Grant
High blocking temperature spin orbit torque electrode
- Patent number 11,251,365
- Issue date Feb 15, 2022
- Intel Corporation
- Tanay Gosavi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Self-aligned spin orbit torque (SOT) memory devices and their metho...
- Patent number 11,227,644
- Issue date Jan 18, 2022
- Intel Corporation
- Kevin O'Brien
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS
- Publication number 20250006841
- Publication date Jan 2, 2025
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES
- Publication number 20250006840
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT
- Publication number 20250008852
- Publication date Jan 2, 2025
- Intel Corporation
- Punyashloka Debashis
Information Patent Application
PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...
- Publication number 20250006791
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...
- Publication number 20250006839
- Publication date Jan 2, 2025
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY E...
- Publication number 20240429301
- Publication date Dec 26, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC ASSEMBLIES WITH INDUCTORS IN DIRECT BONDING REGIONS
- Publication number 20240355768
- Publication date Oct 24, 2024
- Intel Corporation
- Adel A. Elsherbini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH MONOLAYER TMD CHANNEL AND MULTILAYER TMD S...
- Publication number 20240355934
- Publication date Oct 24, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION BEAM LITHOGRAPHY AND NANOENGINEERING
- Publication number 20240222073
- Publication date Jul 4, 2024
- Intel Corporation
- Shida Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE...
- Publication number 20240222506
- Publication date Jul 4, 2024
- Intel Corporation
- Hojoon Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS
- Publication number 20240222428
- Publication date Jul 4, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF NOVEL DEVICES USING ION BEAMS
- Publication number 20240222126
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL CONTACT METALS FOR 2D TRANSISTORS
- Publication number 20240222461
- Publication date Jul 4, 2024
- Intel Corporation
- Ande Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...
- Publication number 20240222482
- Publication date Jul 4, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...
- Publication number 20240222484
- Publication date Jul 4, 2024
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...
- Publication number 20240222113
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D NANORIBBONS UTILIZING SILICON SCAFFOLDING
- Publication number 20240222483
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...
- Publication number 20240222485
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES
- Publication number 20240222441
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE-SIDED ELECTRICAL TE...
- Publication number 20240194533
- Publication date Jun 13, 2024
- Intel Corporation
- Valluri R. RAO
- G01 - MEASURING TESTING
Information Patent Application
TMD INVERTED NANOWIRE INTEGRATION
- Publication number 20240186416
- Publication date Jun 6, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS
- Publication number 20240120415
- Publication date Apr 11, 2024
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR PEROVSKITE TRANSISTORS
- Publication number 20240113212
- Publication date Apr 4, 2024
- Intel Corporation
- Ian Alexander Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC
- Publication number 20240113220
- Publication date Apr 4, 2024
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES
- Publication number 20240105810
- Publication date Mar 28, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DE...
- Publication number 20240105822
- Publication date Mar 28, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...
- Publication number 20240097031
- Publication date Mar 21, 2024
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE 2D TRANSISTOR
- Publication number 20240006521
- Publication date Jan 4, 2024
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT ARCHITECTURE FOR 2D STACKED NANORIBBON TRANSISTOR
- Publication number 20240006484
- Publication date Jan 4, 2024
- Intel Corporation
- Ashish Verma PENUMATCHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALTERNATING SACRIFICIAL LAYER MATERIALS FOR MECHANICALLY STABLE 2D...
- Publication number 20240006481
- Publication date Jan 4, 2024
- Intel Corporation
- Chelsey DOROW
- H01 - BASIC ELECTRIC ELEMENTS

Kevin O'Brien

Person

Patents Grantslast 30 patents

Transition metal dichalcogenide nanowires and methods of fabrication

Transition metal dichalcogenide (TMD) layer stack for transistor ap...

Microelectronic assemblies with inductors in direct bonding regions

Microelectronic assemblies with inductors in direct bonding regions

TMD inverted nanowire integration

Charge-transfer spacers for stacked nanoribbon 2D transistors

Integrated circuit device structures and double-sided electrical te...

Spin orbit memory devices with dual electrodes, and methods of fabr...

Ferroelectric field effect transistors (FeFETs) having band-enginee...

Method to fabricate metal and ferromagnetic metal multilayer interc...

Two terminal spin orbit memory devices and methods of fabrication

Spin orbit torque device with insertion layer between spin orbit to...

Perpendicular exchange bias with antiferromagnet for spin orbit cou...

Perpendicular spin transfer torque memory (pSTTM) devices with enha...

Spin orbit torque (SOT) memory devices and methods of fabrication

Perpendicular spin transfer torque magnetic mechanism

Magnetic tunnel junction (MTJ) devices with a synthetic antiferroma...

Magnetically doped spin orbit torque electrode for perpendicular ma...

Self-aligned repeatedly stackable 3D vertical RRAM

Perpendicular spin transfer torque memory (pSTTM) devices with enha...

Multi-level magnetic tunnel junction (MTJ) devices including mobile...

Multi-layer spin orbit torque electrodes for perpendicular magnetic...

Spin orbit torque (SOT) memory devices and their methods of fabrica...

Spin orbit torque (SOT) memory devices and methods of fabrication

Spin orbit torque (SOT) memory device with self-aligned contacts an...

Perpendicular STTM multi-layer insert free layer

Spin orbit torque memory devices and methods of fabrication

Spin orbit torque (SOT) memory devices with enhanced tunnel magneto...

High blocking temperature spin orbit torque electrode

Self-aligned spin orbit torque (SOT) memory devices and their metho...

Patents Applicationslast 30 patents

TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS

NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES

TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT

PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...

P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...

PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY E...

MICROELECTRONIC ASSEMBLIES WITH INDUCTORS IN DIRECT BONDING REGIONS

INTEGRATED CIRCUITS WITH MONOLAYER TMD CHANNEL AND MULTILAYER TMD S...

ION BEAM LITHOGRAPHY AND NANOENGINEERING

FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE...

SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS

FABRICATION OF NOVEL DEVICES USING ION BEAMS

BEOL CONTACT METALS FOR 2D TRANSISTORS

TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...

TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...

PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...

SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES

INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE-SIDED ELECTRICAL TE...

TMD INVERTED NANOWIRE INTEGRATION

TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS

TECHNOLOGIES FOR PEROVSKITE TRANSISTORS

TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC

VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES

STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DE...

FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...

BACK-END-OF-LINE 2D TRANSISTOR

CONTACT ARCHITECTURE FOR 2D STACKED NANORIBBON TRANSISTOR

ALTERNATING SACRIFICIAL LAYER MATERIALS FOR MECHANICALLY STABLE 2D...