Kimitoshi OKANO

Person

Yokohama-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 9,634,008
- Issue date Apr 25, 2017
- Kabushiki Kaisha Toshiba
- Kimitoshi Okano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,564,224
- Issue date Feb 7, 2017
- Kabushiki Kaisha Toshiba
- Tomoya Inden
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 9,530,839
- Issue date Dec 27, 2016
- Kabushiki Kaisha Toshiba
- Kimitoshi Okano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,252,277
- Issue date Feb 2, 2016
- Kabushiki Kaisha Toshiba
- Kimitoshi Okano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-FET with mechanical stress of the fin perpendicular to the subs...
- Patent number 9,024,364
- Issue date May 5, 2015
- Kabushiki Kaisha Toshiba
- Kimitoshi Okano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 8,791,028
- Issue date Jul 29, 2014
- Kabushiki Kaisha Toshiba
- Kimitoshi Okano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 8,237,226
- Issue date Aug 7, 2012
- Kabushiki Kaisha Toshiba
- Kimitoshi Okano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin transistor
- Patent number 7,989,856
- Issue date Aug 2, 2011
- Kabushiki Kaisha Toshiba
- Masakazu Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,923,788
- Issue date Apr 12, 2011
- Kabushiki Kaisha Toshiba
- Tatsuya Ohguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin and silicide structure
- Patent number 7,915,693
- Issue date Mar 29, 2011
- Kabushiki Kaisha Toshiba
- Kimitoshi Okano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal insulator semiconductor field effect transistor having fin st...
- Patent number 7,868,395
- Issue date Jan 11, 2011
- Kabushiki Kaisha Toshiba
- Takeshi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20170062423
- Publication date Mar 2, 2017
- KABUSHIKI KAISHA TOSHIBA
- Kimitoshi OKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20160268371
- Publication date Sep 15, 2016
- KABUSHIKI KAISHA TOSHIBA
- Kimitoshi OKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160232976
- Publication date Aug 11, 2016
- KABUSHIKI KAISHA TOSHIBA
- Tomoya INDEN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20160233163
- Publication date Aug 11, 2016
- KABUSHIKI KAISHA TOSHIBA
- Shoichi WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20160141293
- Publication date May 19, 2016
- KABUSHIKI KAISHA TOSHIBA
- Jun MURAKAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20150194528
- Publication date Jul 9, 2015
- KABUSHIKI KAISHA TOSHIBA
- Kimitoshi OKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130248942
- Publication date Sep 26, 2013
- Kabushiki Kaisha Toshiba
- Kimitoshi OKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130234215
- Publication date Sep 12, 2013
- Kabushiki Kaisha Toshiba
- Kimitoshi OKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130075797
- Publication date Mar 28, 2013
- Kabushiki Kaisha Toshiba
- Kimitoshi OKANO
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20130069128
- Publication date Mar 21, 2013
- Kimitoshi OKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20130049080
- Publication date Feb 28, 2013
- Kabushiki Kaisha Toshiba
- Kimitoshi OKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20130037869
- Publication date Feb 14, 2013
- Kabushiki Kaisha Toshiba
- Kimitoshi OKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20120064687
- Publication date Mar 15, 2012
- Kabushiki Kaisha Toshiba
- Yoshiyuki Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20090256208
- Publication date Oct 15, 2009
- Kabushiki Kaisha Toshiba
- Kimitoshi OKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN TRANSISTOR
- Publication number 20090152623
- Publication date Jun 18, 2009
- Kabushiki Kaisha Toshiba
- Masakazu GOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20090065869
- Publication date Mar 12, 2009
- Kabushiki Kaisha Toshiba
- Tatsuya OHGURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20090026505
- Publication date Jan 29, 2009
- Kabushiki Kaisha Toshiba
- Kimitoshi OKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal insulator semiconductor field effect transistor having fin st...
- Publication number 20070063224
- Publication date Mar 22, 2007
- Kabushiki Kaisha Toshiba
- Takeshi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS

Kimitoshi OKANO

Person

Patents Grantslast 30 patents

Semiconductor device and manufacturing method of semiconductor device

Semiconductor device

Semiconductor device and manufacturing method of semiconductor device

Semiconductor device

Fin-FET with mechanical stress of the fin perpendicular to the subs...

Semiconductor device and manufacturing method of semiconductor device

Semiconductor device and method of fabricating the same

Fin transistor

Semiconductor device

Semiconductor device with fin and silicide structure

Metal insulator semiconductor field effect transistor having fin st...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

FIN TRANSISTOR

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Metal insulator semiconductor field effect transistor having fin st...