King Jien Chui

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Singapore, SG

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Patents Grantslast 30 patents

Information Patent Grant
Formation of strained Si channel and Si1-xGex source/drain structur...
- Patent number 7,892,905
- Issue date Feb 22, 2011
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kuang Kian Ong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to form source and drain regions over doped de...
- Patent number 7,888,752
- Issue date Feb 15, 2011
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- King Jien Chui
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing a semiconductor device with a strained channel
- Patent number 7,238,581
- Issue date Jul 3, 2007
- Chartered Semiconductor Manufacturing Ltd.
- King Jien Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to form source and drain regions over doped de...
- Patent number 7,202,133
- Issue date Apr 10, 2007
- Chartered Semiconductor Manufacturing, Ltd.
- King Jien Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low cost source drain elevation through poly amorphizing implant te...
- Patent number 7,101,743
- Issue date Sep 5, 2006
- Chartered Semiconductor Manufacturing Ltd.
- Yisuo Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Structure and method to form source and drain regions over doped de...
- Publication number 20070178652
- Publication date Aug 2, 2007
- King Jien Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of strained Si channel and Si1-xGex source/drain structur...
- Publication number 20070032026
- Publication date Feb 8, 2007
- Chartered Semiconductor Manufacturing Ltd.
- Kuang Kian Ong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device with a strained channel
- Publication number 20060030094
- Publication date Feb 9, 2006
- Chartered Semiconductor Manufacturing LTD.
- King Jien Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method to form source and drain regions over doped de...
- Publication number 20050156253
- Publication date Jul 21, 2005
- King Jien Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COST SOURCE DRAIN ELEVATION THROUGH POLY AMORPHIZING IMPLANT TE...
- Publication number 20050148125
- Publication date Jul 7, 2005
- Yisuo Li
- H01 - BASIC ELECTRIC ELEMENTS