Kingsuk Maitra

Person

Guilderland, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit with semiconductor fin fuse
- Patent number 9,219,040
- Issue date Dec 22, 2015
- GLOBALFOUNDRIES, INC.
- Randy W. Mann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon carbide channel for electron mobility of NMOS
- Patent number 8,963,255
- Issue date Feb 24, 2015
- GLOBALFOUNDRIES Inc.
- Jeremy A. Wahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to enable compressively strained pFET channel in a FinFET st...
- Patent number 8,900,973
- Issue date Dec 2, 2014
- International Business Machines Corporation
- Nathaniel C. Berliner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device having plural FIN-FETs with different FIN heights...
- Patent number 8,759,904
- Issue date Jun 24, 2014
- GLOBALFOUNDRIES, INC.
- Jeremy A. Wahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon carbide channel for electron mobility of NMOS
- Patent number 8,722,482
- Issue date May 13, 2014
- GLOBALFOUNDRIES Inc.
- Jeremy A. Wahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming high mobility fin channels on three dimensional...
- Patent number 8,669,147
- Issue date Mar 11, 2014
- GLOBALFOUNDRIES Inc.
- Daniel T. Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with a fin-based fuse, and related fabrication m...
- Patent number 8,569,116
- Issue date Oct 29, 2013
- GLOBALFOUNDRIES, INC.
- Randy W. Mann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FIN-FET device and method and integrated circuits using such
- Patent number 8,460,984
- Issue date Jun 11, 2013
- GLOBALFOUNDRIES, INC.
- Jeremy Wahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor circuit including a long channel device and a short c...
- Patent number 7,880,236
- Issue date Feb 1, 2011
- Advanced Micro Devices, Inc.
- Andreas Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extremely-thin silicon-on-insulator transistor with raised source/d...
- Patent number 7,871,869
- Issue date Jan 18, 2011
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating semiconductor devices minimizing under-oxid...
- Patent number 7,759,205
- Issue date Jul 20, 2010
- Advanced Micro Devices, Inc.
- Kingsuk Maitra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extremely-thin silicon-on-insulator transistor with raised source/d...
- Patent number 7,652,332
- Issue date Jan 26, 2010
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRAINED SILICON CARBIDE CHANNEL FOR ELECTRON MOBILITY OF NMOS
- Publication number 20140203298
- Publication date Jul 24, 2014
- GLOBALFOUNDRIES INC.
- Jeremy A. WAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH A FIN-BASED FUSE, AND RELATED FABRICATION M...
- Publication number 20140021579
- Publication date Jan 23, 2014
- GLOBALFOUNDRIES, Inc.
- Randy W. Mann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING HIGH MOBILITY FIN CHANNELS ON THREE DIMENSIONAL...
- Publication number 20130330916
- Publication date Dec 12, 2013
- GLOBALFOUNDRIES INC.
- Daniel T. Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO ENABLE COMPRESSIVELY STRAINED PFET CHANNEL IN A FINFET ST...
- Publication number 20130052801
- Publication date Feb 28, 2013
- International Business Machines Corporation
- Nathaniel C. Berliner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMBINED PLANAR FET AND FIN-FET DEVICES AND METHODS
- Publication number 20130049136
- Publication date Feb 28, 2013
- Jeremy A. Wahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH A FIN-BASED FUSE, AND RELATED FABRICATION M...
- Publication number 20130001741
- Publication date Jan 3, 2013
- GLOBALFOUNDRIES INC.
- Randy Mann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-FET DEVICE AND METHOD AND INTEGRATED CIRCUITS USING SUCH
- Publication number 20120313169
- Publication date Dec 13, 2012
- GLOBALFOUNDRIES INC.
- Jeremy Wahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDUCING STRESS IN FIN-FET DEVICE
- Publication number 20120070947
- Publication date Mar 22, 2012
- GLOBALFOUNDRIES INC.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SILICON CARBIDE CHANNEL FOR ELECTRON MOBILITY OF NMOS
- Publication number 20110227094
- Publication date Sep 22, 2011
- GLOBALFOUNDRIES INC.
- Jeremy A. Wahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING SEMICONDUCTOR DEVICES MINIMIZING UNDER-OXID...
- Publication number 20100184265
- Publication date Jul 22, 2010
- Advanced Micro Devices, Inc.
- Kingsuk Maitra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI SUBSTRATES AND DEVICES ON SOI SUBSTRATES HAVING A SILICON NITRI...
- Publication number 20100038686
- Publication date Feb 18, 2010
- Advanced Micro Devices, Inc.
- Kingsuk MAITRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CIRCUIT INCLUDING A LONG CHANNEL DEVICE AND A SHORT C...
- Publication number 20100019313
- Publication date Jan 28, 2010
- Advanced Micro Devices, Inc.
- Andreas KERBER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTREMELY-THIN SILICON-ON-INSULATOR TRANSISTOR WITH RAISED SOURCE/D...
- Publication number 20090311836
- Publication date Dec 17, 2009
- International Business Machines Corp.
- EDUARD A. CARTIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTORS FOR THIN SOI INTEGRATION AND METHODS FOR FABRICATIN...
- Publication number 20090045458
- Publication date Feb 19, 2009
- Advanced Micro Devices, Inc.
- John A. IACOPONI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTREMELY-THIN SILICON-ON-INSULATOR TRANSISTOR WITH RAISED SOURCE/D...
- Publication number 20090039426
- Publication date Feb 12, 2009
- International Business Machines Corporation
- EDUARD A. CARTIER
- H01 - BASIC ELECTRIC ELEMENTS

Kingsuk Maitra

Person

Patents Grantslast 30 patents

Integrated circuit with semiconductor fin fuse

Strained silicon carbide channel for electron mobility of NMOS

Method to enable compressively strained pFET channel in a FinFET st...

Electronic device having plural FIN-FETs with different FIN heights...

Strained silicon carbide channel for electron mobility of NMOS

Methods of forming high mobility fin channels on three dimensional...

Integrated circuit with a fin-based fuse, and related fabrication m...

FIN-FET device and method and integrated circuits using such

Semiconductor circuit including a long channel device and a short c...

Extremely-thin silicon-on-insulator transistor with raised source/d...

Methods for fabricating semiconductor devices minimizing under-oxid...

Extremely-thin silicon-on-insulator transistor with raised source/d...

Patents Applicationslast 30 patents

STRAINED SILICON CARBIDE CHANNEL FOR ELECTRON MOBILITY OF NMOS

INTEGRATED CIRCUIT WITH A FIN-BASED FUSE, AND RELATED FABRICATION M...

METHODS OF FORMING HIGH MOBILITY FIN CHANNELS ON THREE DIMENSIONAL...

METHOD TO ENABLE COMPRESSIVELY STRAINED PFET CHANNEL IN A FINFET ST...

COMBINED PLANAR FET AND FIN-FET DEVICES AND METHODS

INTEGRATED CIRCUIT WITH A FIN-BASED FUSE, AND RELATED FABRICATION M...

FIN-FET DEVICE AND METHOD AND INTEGRATED CIRCUITS USING SUCH

INDUCING STRESS IN FIN-FET DEVICE

STRAINED SILICON CARBIDE CHANNEL FOR ELECTRON MOBILITY OF NMOS

METHODS FOR FABRICATING SEMICONDUCTOR DEVICES MINIMIZING UNDER-OXID...

SOI SUBSTRATES AND DEVICES ON SOI SUBSTRATES HAVING A SILICON NITRI...

SEMICONDUCTOR CIRCUIT INCLUDING A LONG CHANNEL DEVICE AND A SHORT C...

EXTREMELY-THIN SILICON-ON-INSULATOR TRANSISTOR WITH RAISED SOURCE/D...

MOS TRANSISTORS FOR THIN SOI INTEGRATION AND METHODS FOR FABRICATIN...

EXTREMELY-THIN SILICON-ON-INSULATOR TRANSISTOR WITH RAISED SOURCE/D...