Kirby B. Nichols

Person

Chelmsford, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistors with gate electrodes having Ni and Ti meta...
- Patent number 9,136,111
- Issue date Sep 15, 2015
- BAE Systems Information and Electronic Systems Integration Inc.
- Kanin Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-temperature-grown (LTG) insulated-gate PHEMT device and method
- Patent number 7,842,972
- Issue date Nov 30, 2010
- Retro Reflective Optics, LLC
- Kirby B. Nichols
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Permeable base transistor having an electrode configuration for hea...
- Patent number 5,155,561
- Issue date Oct 13, 1992
- Massachusetts Institute of Technology
- Carl O. Bozler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor device fabricated with semiconductor regrowth
- Patent number 5,106,778
- Issue date Apr 21, 1992
- Massachusetts Institute of Technology
- Mark A. Hollis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spatial light modulator using charge coupled device with quantum wells
- Patent number 5,105,248
- Issue date Apr 14, 1992
- Massachusetts Institute of Technology
- Barry E. Burke
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Electrooptical switch with separate detector and modulator modules
- Patent number 4,985,621
- Issue date Jan 15, 1991
- Massachusetts Institute of Technology
- Brian F. Aull
- G02 - OPTICS
Information Patent Grant
Vertical transistor device fabricated with semiconductor regrowth
- Patent number 4,903,089
- Issue date Feb 20, 1990
- Massachusetts Institute of Technology
- Mark A. Hollis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High mobility transistor with opposed-gates
- Patent number 4,839,310
- Issue date Jun 13, 1989
- Massachusetts Institute of Technology
- Mark A. Hollis
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
Low-Temperature-Grown (Ltg) Insulated-Gate Phemt Device and Method
- Publication number 20080017844
- Publication date Jan 24, 2008
- Kirby B. Nichols
- H01 - BASIC ELECTRIC ELEMENTS

Kirby B. Nichols

Person

Patents Grantslast 30 patents

Field effect transistors with gate electrodes having Ni and Ti meta...

Low-temperature-grown (LTG) insulated-gate PHEMT device and method

Permeable base transistor having an electrode configuration for hea...

Vertical transistor device fabricated with semiconductor regrowth

Spatial light modulator using charge coupled device with quantum wells

Electrooptical switch with separate detector and modulator modules

Vertical transistor device fabricated with semiconductor regrowth

High mobility transistor with opposed-gates

Patents Applicationslast 30 patents

Low-Temperature-Grown (Ltg) Insulated-Gate Phemt Device and Method