Kirby MAXEY

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transition metal dichalcogenide nanowires and methods of fabrication
- Patent number 12,176,388
- Issue date Dec 24, 2024
- Intel Corporation
- Kevin O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide (TMD) layer stack for transistor ap...
- Patent number 12,125,895
- Issue date Oct 22, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TMD inverted nanowire integration
- Patent number 11,935,956
- Issue date Mar 19, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-transfer spacers for stacked nanoribbon 2D transistors
- Patent number 11,908,950
- Issue date Feb 20, 2024
- Intel Corporation
- Kirby Maxey
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ION BEAM LITHOGRAPHY AND NANOENGINEERING
- Publication number 20240222073
- Publication date Jul 4, 2024
- Intel Corporation
- Shida Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS
- Publication number 20240222428
- Publication date Jul 4, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL CONTACT METALS FOR 2D TRANSISTORS
- Publication number 20240222461
- Publication date Jul 4, 2024
- Intel Corporation
- Ande Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...
- Publication number 20240222482
- Publication date Jul 4, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...
- Publication number 20240222484
- Publication date Jul 4, 2024
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...
- Publication number 20240222113
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D NANORIBBONS UTILIZING SILICON SCAFFOLDING
- Publication number 20240222483
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TMD INVERTED NANOWIRE INTEGRATION
- Publication number 20240186416
- Publication date Jun 6, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE 2D TRANSISTOR
- Publication number 20240006521
- Publication date Jan 4, 2024
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT ARCHITECTURE FOR 2D STACKED NANORIBBON TRANSISTOR
- Publication number 20240006484
- Publication date Jan 4, 2024
- Intel Corporation
- Ashish Verma PENUMATCHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALTERNATING SACRIFICIAL LAYER MATERIALS FOR MECHANICALLY STABLE 2D...
- Publication number 20240006481
- Publication date Jan 4, 2024
- Intel Corporation
- Chelsey DOROW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE 2D MEMORY CELL
- Publication number 20240008290
- Publication date Jan 4, 2024
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ASSEMBLED MONOLAYER ON A DIELECTRIC FOR TRANSITION METAL DICHA...
- Publication number 20230420510
- Publication date Dec 28, 2023
- Intel Corporation
- Carl H. NAYLOR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D LAYERED GATE OXIDE
- Publication number 20230420514
- Publication date Dec 28, 2023
- Intel Corporation
- Chelsey DOROW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL O...
- Publication number 20230420364
- Publication date Dec 28, 2023
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED...
- Publication number 20230420511
- Publication date Dec 28, 2023
- Intel Corporation
- Carl H. NAYLOR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL PMOS DEVICES FOR PROVIDING CMOS IN BACK-END LAYERS...
- Publication number 20230411390
- Publication date Dec 21, 2023
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYERED 2D SEMICONDUCTORS
- Publication number 20230317783
- Publication date Oct 5, 2023
- Intel Corporation
- Kirby MAXEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH MAX OR MX CONDUCTIVE MATERIALS
- Publication number 20230197836
- Publication date Jun 22, 2023
- Intel Corporation
- Carl Hugo Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CHALCOGENIDE TRANSISTORS WITH DEFECTED CHANNEL TRANSITION LAYER
- Publication number 20230197860
- Publication date Jun 22, 2023
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTORS HAVING CMOS FUNCTIONALITY INTEGRATED WITH 2D...
- Publication number 20230113614
- Publication date Apr 13, 2023
- Intel Corporation
- Kevin P. O'BRIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED 2D CMOS WITH INTER METAL LAYERS
- Publication number 20230101760
- Publication date Mar 30, 2023
- Intel Corporation
- Kevin P. O'BRIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTORS HAVING MULTI-LAYER GATE DIELECTRIC STRUCTURES...
- Publication number 20230101370
- Publication date Mar 30, 2023
- Intel Corporation
- Sudarat LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH GRAPHENE CONTACTS
- Publication number 20230102695
- Publication date Mar 30, 2023
- Intel Corporation
- Carl H. NAYLOR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH IMPROVED TWO-DIMENSIONAL CHANNEL...
- Publication number 20230100713
- Publication date Mar 30, 2023
- Intel Corporation
- Chelsey DOROW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH A MONOLAYER EDGE CONTACT
- Publication number 20230097898
- Publication date Mar 30, 2023
- Intel Corpration
- Kevin P. O'BRIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROSTRUCTURE MATERIAL CONTACTS FOR 2D TRANSISTORS
- Publication number 20230099814
- Publication date Mar 30, 2023
- Intel Corporation
- Kirby Maxey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT GATING FOR 2D FIELD EFFECT TRANSISTORS
- Publication number 20230100451
- Publication date Mar 30, 2023
- Intel Corporation
- Kirby Maxey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS INTEGRATION OF 2D MATERIAL BY END ETCH
- Publication number 20230096347
- Publication date Mar 30, 2023
- Intel Corporation
- Kevin P. O'BRIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTORS HAVING A SPIN-ON 2D CHANNEL MATERIAL
- Publication number 20230098467
- Publication date Mar 30, 2023
- Intel Corporation
- Carl H. NAYLOR
- H01 - BASIC ELECTRIC ELEMENTS

Kirby MAXEY

Person

Patents Grantslast 30 patents

Transition metal dichalcogenide nanowires and methods of fabrication

Transition metal dichalcogenide (TMD) layer stack for transistor ap...

TMD inverted nanowire integration

Charge-transfer spacers for stacked nanoribbon 2D transistors

Patents Applicationslast 30 patents

ION BEAM LITHOGRAPHY AND NANOENGINEERING

SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS

BEOL CONTACT METALS FOR 2D TRANSISTORS

TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...

TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...

PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

TMD INVERTED NANOWIRE INTEGRATION

BACK-END-OF-LINE 2D TRANSISTOR

CONTACT ARCHITECTURE FOR 2D STACKED NANORIBBON TRANSISTOR

ALTERNATING SACRIFICIAL LAYER MATERIALS FOR MECHANICALLY STABLE 2D...

BACK-END-OF-LINE 2D MEMORY CELL

SELF-ASSEMBLED MONOLAYER ON A DIELECTRIC FOR TRANSITION METAL DICHA...

2D LAYERED GATE OXIDE

MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL O...

STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED...

TWO-DIMENSIONAL PMOS DEVICES FOR PROVIDING CMOS IN BACK-END LAYERS...

LAYERED 2D SEMICONDUCTORS

INTEGRATED CIRCUITS WITH MAX OR MX CONDUCTIVE MATERIALS

METAL CHALCOGENIDE TRANSISTORS WITH DEFECTED CHANNEL TRANSITION LAYER

THIN FILM TRANSISTORS HAVING CMOS FUNCTIONALITY INTEGRATED WITH 2D...

STACKED 2D CMOS WITH INTER METAL LAYERS

THIN FILM TRANSISTORS HAVING MULTI-LAYER GATE DIELECTRIC STRUCTURES...

INTEGRATED CIRCUIT STRUCTURES WITH GRAPHENE CONTACTS

INTEGRATED CIRCUIT STRUCTURES WITH IMPROVED TWO-DIMENSIONAL CHANNEL...

TRANSISTOR STRUCTURE WITH A MONOLAYER EDGE CONTACT

HETEROSTRUCTURE MATERIAL CONTACTS FOR 2D TRANSISTORS

CONTACT GATING FOR 2D FIELD EFFECT TRANSISTORS

CMOS INTEGRATION OF 2D MATERIAL BY END ETCH

THIN FILM TRANSISTORS HAVING A SPIN-ON 2D CHANNEL MATERIAL