Kiyohiko SAKAKIBARA

Person

Yokkaichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Reverse VT-state operation and optimized BiCS device structure
- Patent number 11,763,907
- Issue date Sep 19, 2023
- SanDisk Technologies LLC
- Kiyohiko Sakakibara
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional flat memory device including a dual dipole blocki...
- Patent number 11,631,691
- Issue date Apr 18, 2023
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse VT-state operation and optimized BiCS device structure
- Patent number 11,456,044
- Issue date Sep 27, 2022
- SanDisk Technologies LLC
- Kiyohiko Sakakibara
- G11 - INFORMATION STORAGE
Information Patent Grant
Threshold voltage setting with boosting read scheme
- Patent number 11,348,649
- Issue date May 31, 2022
- SanDisk Technologies LLC
- Kiyohiko Sakakibara
- G11 - INFORMATION STORAGE
Information Patent Grant
Buried source line structure for boosting read scheme
- Patent number 11,342,006
- Issue date May 24, 2022
- SanDisk Technologies LLC
- Kiyohiko Sakakibara
- G11 - INFORMATION STORAGE
Information Patent Grant
Boosting read scheme with back-gate bias
- Patent number 11,227,663
- Issue date Jan 18, 2022
- SanDisk Technologies LLC
- Kiyohiko Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage setting with boosting read scheme
- Patent number 11,004,518
- Issue date May 11, 2021
- SanDisk Technologies LLC
- Kiyohiko Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Boosting read scheme with back-gate bias
- Patent number 10,957,401
- Issue date Mar 23, 2021
- SanDisk Technologies LLC
- Kiyohiko Sakakibara
- G11 - INFORMATION STORAGE
Information Patent Grant
Boosting read scheme with back-gate bias
- Patent number 10,950,311
- Issue date Mar 16, 2021
- SanDisk Technologies LLC
- Kiyohiko Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device using a buried source line with a t...
- Patent number 10,916,556
- Issue date Feb 9, 2021
- SanDisk Technologies LLC
- Kiyohiko Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing a carbon-doped source co...
- Patent number 10,903,222
- Issue date Jan 26, 2021
- SanDisk Technologies LLC
- Kiyohiko Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing a capped insulating sour...
- Patent number 10,854,627
- Issue date Dec 1, 2020
- SanDisk Technologies LLC
- Takumi Moriyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with self-aligned vertical conducti...
- Patent number 10,777,575
- Issue date Sep 15, 2020
- SanDisk Technologies LLC
- Zhixin Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional flat memory device including a dual dipole blocki...
- Patent number 10,720,444
- Issue date Jul 21, 2020
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having nitrided direct source strap...
- Patent number 10,720,445
- Issue date Jul 21, 2020
- SanDisk Technologies LLC
- Satoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including bottle-shaped memory stac...
- Patent number 10,692,884
- Issue date Jun 23, 2020
- SanDisk Technologies LLC
- Zhixin Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having vertical semiconductor chann...
- Patent number 10,629,613
- Issue date Apr 21, 2020
- SanDisk Technologies LLC
- Satoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and methods of making the same usin...
- Patent number 10,629,611
- Issue date Apr 21, 2020
- SanDisk Technologies LLC
- Zhixin Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and methods of making the same usin...
- Patent number 10,586,803
- Issue date Mar 10, 2020
- SanDisk Technologies LLC
- Mitsuteru Mushiga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with straddling drain select electr...
- Patent number 10,381,229
- Issue date Aug 13, 2019
- SanDisk Technologies LLC
- Shinsuke Yada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing through-memory-level con...
- Patent number 10,304,852
- Issue date May 28, 2019
- SanDisk Technologies LLC
- Zhixin Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device employing direct source contact and...
- Patent number 10,199,359
- Issue date Feb 5, 2019
- SanDisk Technologies LLC
- Kiyohiko Sakakibara
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Three-dimensional junction memory device and method reading thereof...
- Patent number 10,074,661
- Issue date Sep 11, 2018
- SanDisk Technologies LLC
- Kiyohiko Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial source region for uniform threshold voltage of vertical t...
- Patent number 9,911,748
- Issue date Mar 6, 2018
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing vertically isolated char...
- Patent number 9,812,463
- Issue date Nov 7, 2017
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Locally-trap-characteristic-enhanced charge trap layer for three-di...
- Patent number 9,711,530
- Issue date Jul 18, 2017
- SanDisk Technologies LLC
- Yusuke Ikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional P-I-N memory device and method reading thereof us...
- Patent number 9,666,281
- Issue date May 30, 2017
- SanDisk Technologies LLC
- Kiyohiko Sakakibara
- G11 - INFORMATION STORAGE
Information Patent Grant
Blocking oxide in memory opening integration scheme for three-dimen...
- Patent number 9,601,508
- Issue date Mar 21, 2017
- SanDisk Technologies LLC
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing control gate electrode curvature in three-dimens...
- Patent number 9,589,839
- Issue date Mar 7, 2017
- SanDisk Technologies LLC
- Yusuke Ikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mid-tunneling dielectric band gap modification for enhanced data re...
- Patent number 9,443,866
- Issue date Sep 13, 2016
- SanDisk Technologies LLC
- Kiyohiko Sakakibara
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
REVERSE VT-STATE OPERATION AND OPTIMIZED BICS DEVICE STRUCTURE
- Publication number 20220406390
- Publication date Dec 22, 2022
- SANDISK TECHNOLOGIES LLC
- Kiyohiko Sakakibara
- G11 - INFORMATION STORAGE
Information Patent Application
REVERSE VT-STATE OPERATION AND OPTIMIZED BICS DEVICE STRUCTURE
- Publication number 20220293198
- Publication date Sep 15, 2022
- SANDISK TECHNOLOGIES LLC
- Kiyohiko Sakakibara
- G11 - INFORMATION STORAGE
Information Patent Application
BURIED SOURCE LINE STRUCTURE FOR BOOSTING READ SCHEME
- Publication number 20220254382
- Publication date Aug 11, 2022
- SANDISK TECHNOLOGIES LLC
- Kiyohiko Sakakibara
- G11 - INFORMATION STORAGE
Information Patent Application
BOOSTING READ SCHEME WITH BACK-GATE BIAS
- Publication number 20210174881
- Publication date Jun 10, 2021
- SANDISK TECHNOLOGIES LLC
- Kiyohiko Sakakibara
- G11 - INFORMATION STORAGE
Information Patent Application
BURIED SOURCE LINE STRUCTURE FOR BOOSTING READ SCHEME
- Publication number 20210125643
- Publication date Apr 29, 2021
- SANDISK TECHNOLOGIES LLC
- Kiyohiko Sakakibara
- G11 - INFORMATION STORAGE
Information Patent Application
BOOSTING READ SCHEME WITH BACK-GATE BIAS
- Publication number 20200411115
- Publication date Dec 31, 2020
- SANDISK TECHNOLOGIES LLC
- Kiyohiko Sakakibara
- G11 - INFORMATION STORAGE
Information Patent Application
THRESHOLD VOLTAGE SETTING WITH BOOSTING READ SCHEME
- Publication number 20200411113
- Publication date Dec 31, 2020
- SANDISK TECHNOLOGIES LLC
- Kiyohiko Sakakibara
- G11 - INFORMATION STORAGE
Information Patent Application
THRESHOLD VOLTAGE SETTING WITH BOOSTING READ SCHEME
- Publication number 20200411114
- Publication date Dec 31, 2020
- SANDISK TECHNOLOGIES LLC
- Kiyohiko Sakakibara
- G11 - INFORMATION STORAGE
Information Patent Application
BOOSTING READ SCHEME WITH BACK-GATE BIAS
- Publication number 20200411112
- Publication date Dec 31, 2020
- SANDISK TECHNOLOGIES LLC
- Kiyohiko Sakakibara
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED VERTICAL CONDUCTI...
- Publication number 20200303397
- Publication date Sep 24, 2020
- SANDISK TECHNOLOGIES LLC
- Zhixin CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL FLAT MEMORY DEVICE INCLUDING A DUAL DIPOLE BLOCKI...
- Publication number 20200279866
- Publication date Sep 3, 2020
- SANDISK TECHNOLOGIES LLC
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING A CARBON-DOPED SOURCE CO...
- Publication number 20200251479
- Publication date Aug 6, 2020
- SANDISK TECHNOLOGIES LLC
- Kiyohiko SAKAKIBARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Dimensional Memory Device Including Bottle-Shaped Memory Stac...
- Publication number 20200098780
- Publication date Mar 26, 2020
- SANDISK TECHNOLOGIES LLC
- Zhixin CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL FLAT MEMORY DEVICE INCLUDING A DUAL DIPOLE BLOCKI...
- Publication number 20200058672
- Publication date Feb 20, 2020
- SANDISK TECHNOLOGIES LLC
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHODS OF MAKING THE SAME USIN...
- Publication number 20190326313
- Publication date Oct 24, 2019
- SANDISK TECHNOLOGIES LLC
- Zhixin Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHODS OF MAKING THE SAME USIN...
- Publication number 20190326306
- Publication date Oct 24, 2019
- SANDISK TECHNOLOGIES LLC
- Mitsuteru Mushiga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH STRADDLING DRAIN SELECT ELECTR...
- Publication number 20190067025
- Publication date Feb 28, 2019
- SanDisk Technologies LLC
- Shinsuke YADA
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE EMPLOYING DIRECT SOURCE CONTACT AND...
- Publication number 20190043830
- Publication date Feb 7, 2019
- SanDisk Technologies LLC
- Kiyohiko SAKAKIBARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING VERTICALLY ISOLATED CHAR...
- Publication number 20170278859
- Publication date Sep 28, 2017
- SanDisk Technologies LLC
- Rahul SHARANGPANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SOURCE REGION FOR UNIFORM THRESHOLD VOLTAGE OF VERTICAL T...
- Publication number 20170092654
- Publication date Mar 30, 2017
- SANDISK TECHNOLOGIES INC.
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL JUNCTION MEMORY DEVICE AND METHOD READING THEREOF...
- Publication number 20170025421
- Publication date Jan 26, 2017
- SanDisk Technologies LLC
- Kiyohiko SAKAKIBARA
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL P-I-N MEMORY DEVICE AND METHOD READING THEREOF US...
- Publication number 20160329101
- Publication date Nov 10, 2016
- SANDISK TECHNOLOGIES INC.
- Kiyohiko SAKAKIBARA
- G11 - INFORMATION STORAGE
Information Patent Application
BLOCKING OXIDE IN MEMORY OPENING INTEGRATION SCHEME FOR THREE-DIMEN...
- Publication number 20160315095
- Publication date Oct 27, 2016
- SANDISK TECHNOLOGIES INC.
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MID-TUNNELING DIELECTRIC BAND GAP MODIFICATION FOR ENHANCED DATA RE...
- Publication number 20160284726
- Publication date Sep 29, 2016
- SANDISK TECHNOLOGIES INC.
- Kiyohiko SAKAKIBARA
- G11 - INFORMATION STORAGE

Kiyohiko SAKAKIBARA

Person

Patents Grantslast 30 patents

Reverse VT-state operation and optimized BiCS device structure

Three-dimensional flat memory device including a dual dipole blocki...

Reverse VT-state operation and optimized BiCS device structure

Threshold voltage setting with boosting read scheme

Buried source line structure for boosting read scheme

Boosting read scheme with back-gate bias

Threshold voltage setting with boosting read scheme

Boosting read scheme with back-gate bias

Boosting read scheme with back-gate bias

Three-dimensional memory device using a buried source line with a t...

Three-dimensional memory device containing a carbon-doped source co...

Three-dimensional memory device containing a capped insulating sour...

Three-dimensional memory device with self-aligned vertical conducti...

Three-dimensional flat memory device including a dual dipole blocki...

Three-dimensional memory device having nitrided direct source strap...

Three-dimensional memory device including bottle-shaped memory stac...

Three-dimensional memory device having vertical semiconductor chann...

Three-dimensional memory device and methods of making the same usin...

Three-dimensional memory device and methods of making the same usin...

Three-dimensional memory device with straddling drain select electr...

Three-dimensional memory device containing through-memory-level con...

Three-dimensional memory device employing direct source contact and...

Three-dimensional junction memory device and method reading thereof...

Epitaxial source region for uniform threshold voltage of vertical t...

Three-dimensional memory device containing vertically isolated char...

Locally-trap-characteristic-enhanced charge trap layer for three-di...

Three-dimensional P-I-N memory device and method reading thereof us...

Blocking oxide in memory opening integration scheme for three-dimen...

Method of reducing control gate electrode curvature in three-dimens...

Mid-tunneling dielectric band gap modification for enhanced data re...

Patents Applicationslast 30 patents

REVERSE VT-STATE OPERATION AND OPTIMIZED BICS DEVICE STRUCTURE

REVERSE VT-STATE OPERATION AND OPTIMIZED BICS DEVICE STRUCTURE

BURIED SOURCE LINE STRUCTURE FOR BOOSTING READ SCHEME

BOOSTING READ SCHEME WITH BACK-GATE BIAS

BURIED SOURCE LINE STRUCTURE FOR BOOSTING READ SCHEME

BOOSTING READ SCHEME WITH BACK-GATE BIAS

THRESHOLD VOLTAGE SETTING WITH BOOSTING READ SCHEME

THRESHOLD VOLTAGE SETTING WITH BOOSTING READ SCHEME

BOOSTING READ SCHEME WITH BACK-GATE BIAS

THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED VERTICAL CONDUCTI...

THREE-DIMENSIONAL FLAT MEMORY DEVICE INCLUDING A DUAL DIPOLE BLOCKI...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING A CARBON-DOPED SOURCE CO...

Three-Dimensional Memory Device Including Bottle-Shaped Memory Stac...

THREE-DIMENSIONAL FLAT MEMORY DEVICE INCLUDING A DUAL DIPOLE BLOCKI...

THREE-DIMENSIONAL MEMORY DEVICE AND METHODS OF MAKING THE SAME USIN...

THREE-DIMENSIONAL MEMORY DEVICE AND METHODS OF MAKING THE SAME USIN...

THREE-DIMENSIONAL MEMORY DEVICE WITH STRADDLING DRAIN SELECT ELECTR...

THREE-DIMENSIONAL MEMORY DEVICE EMPLOYING DIRECT SOURCE CONTACT AND...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING VERTICALLY ISOLATED CHAR...

EPITAXIAL SOURCE REGION FOR UNIFORM THRESHOLD VOLTAGE OF VERTICAL T...

THREE-DIMENSIONAL JUNCTION MEMORY DEVICE AND METHOD READING THEREOF...

THREE-DIMENSIONAL P-I-N MEMORY DEVICE AND METHOD READING THEREOF US...

BLOCKING OXIDE IN MEMORY OPENING INTEGRATION SCHEME FOR THREE-DIMEN...

MID-TUNNELING DIELECTRIC BAND GAP MODIFICATION FOR ENHANCED DATA RE...