Kiyokazu Nagahara

Person

Minato-ku, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic memory element and magnetic memory
- Patent number 8,994,130
- Issue date Mar 31, 2015
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element, magnetic memory and manufacturing method o...
- Patent number 8,884,388
- Issue date Nov 11, 2014
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory including memory cells incorporating data recording...
- Patent number 8,830,735
- Issue date Sep 9, 2014
- Renesas Electronics Corporation
- Eiji Kariyada
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and magnetic memory
- Patent number 8,791,534
- Issue date Jul 29, 2014
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory and method of manufacturing the same
- Patent number 8,787,076
- Issue date Jul 22, 2014
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element and magnetic random access memory
- Patent number 8,687,414
- Issue date Apr 1, 2014
- NEC Corporation
- Kiyokazu Nagahara
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory and initializing method for the same
- Patent number 8,625,327
- Issue date Jan 7, 2014
- NEC Corporation
- Tetsuhiro Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element, magnetic memory and initializing method
- Patent number 8,592,930
- Issue date Nov 26, 2013
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of initializing magnetic memory element
- Patent number 8,565,011
- Issue date Oct 22, 2013
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and magnetic random access memory
- Patent number 8,559,214
- Issue date Oct 15, 2013
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance element, MRAM, and initialization method for magn...
- Patent number 8,537,604
- Issue date Sep 17, 2013
- NEC Corporation
- Tetsuhiro Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element and magnetic memory
- Patent number 8,514,616
- Issue date Aug 20, 2013
- NEC Corporation
- Nobuyuki Ishiwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile logic circuit
- Patent number 8,503,222
- Issue date Aug 6, 2013
- NEC Corporation
- Tetsuhiro Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory and manufacturing method thereof
- Patent number 8,481,339
- Issue date Jul 9, 2013
- Renesas Electronics Corporation
- Kiyokazu Nagahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Domain wall motion element and magnetic random access memory
- Patent number 8,379,429
- Issue date Feb 19, 2013
- NEC Corporation
- Nobuyuki Ishiwata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory, method of initializing magnetic rand...
- Patent number 8,363,461
- Issue date Jan 29, 2013
- NEC Corporation
- Tetsuhiro Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory, write method therefor, and magnetore...
- Patent number 8,194,436
- Issue date Jun 5, 2012
- NEC Corporation
- Shunsuke Fukami
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory and initializing method for the same
- Patent number 8,174,873
- Issue date May 8, 2012
- NEC Corporation
- Tetsuhiro Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element, and magnetic random access memory
- Patent number 8,174,086
- Issue date May 8, 2012
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory
- Patent number 8,159,872
- Issue date Apr 17, 2012
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetic random access memory
- Patent number 8,154,913
- Issue date Apr 10, 2012
- NEC Corporation
- Shunsuke Fukami
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory
- Patent number 8,149,615
- Issue date Apr 3, 2012
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 8,120,950
- Issue date Feb 21, 2012
- NEC Corporation
- Shunsuke Fukami
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory and method of manufacturing the same
- Patent number 8,120,127
- Issue date Feb 21, 2012
- NEC Corporation
- Kiyokazu Nagahara
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic domain wall random access memory
- Patent number 8,040,724
- Issue date Oct 18, 2011
- NEC Corporation
- Tetsuhiro Suzuki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magneto-resistance effect element and magneto-resistance effect head
- Patent number 7,369,375
- Issue date May 6, 2008
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magneto-resistance effect element, magneto-resistance effect head,...
- Patent number 7,298,596
- Issue date Nov 20, 2007
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magneto-resistance effect element, magneto-resistance effect head,...
- Patent number 7,265,949
- Issue date Sep 4, 2007
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magneto-resistance effect element, magneto-resistance effect head,...
- Patent number 7,161,774
- Issue date Jan 9, 2007
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magneto-resistance effect element, magneto-resistance effect head,...
- Patent number 7,158,355
- Issue date Jan 2, 2007
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC MEMORY INCLUDING MEMORY CELLS INCORPORATING DATA RECORDING...
- Publication number 20140346518
- Publication date Nov 27, 2014
- Eiji Kariyada
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY
- Publication number 20130140660
- Publication date Jun 6, 2013
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY AND MANUFACTURING METHOD O...
- Publication number 20130113058
- Publication date May 9, 2013
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY AND INITIALIZING METHOD
- Publication number 20120278582
- Publication date Nov 1, 2012
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20120211811
- Publication date Aug 23, 2012
- RENESAS ELECTRONICS CORPORATION
- Kiyokazu NAGAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY INCLUDING MEMORY CELLS INCORPORATING DATA RECORDING...
- Publication number 20120135275
- Publication date May 31, 2012
- RENESAS ELECTRONICS CORPORATION
- Eiji Kariyada
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
- Publication number 20110298067
- Publication date Dec 8, 2011
- NEC Corporation
- Nobuyuki Ishiwata
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
- Publication number 20110297909
- Publication date Dec 8, 2011
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE LOGIC CIRCUIT
- Publication number 20110292718
- Publication date Dec 1, 2011
- Tetsuhiro Suzuki
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MAGNETIC MEMORY ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20110267879
- Publication date Nov 3, 2011
- NEC Corporation
- Kiyokazu Nagahara
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20110260273
- Publication date Oct 27, 2011
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF INITIALIZING MAGNETIC MEMORY ELEMENT
- Publication number 20110199818
- Publication date Aug 18, 2011
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE ELEMENT, MRAM, AND INITIALIZATION METHOD FOR MAGN...
- Publication number 20110188298
- Publication date Aug 4, 2011
- Tetsuhiro Suzuki
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME
- Publication number 20110163402
- Publication date Jul 7, 2011
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY, METHOD OF INITIALIZING MAGNETIC RAND...
- Publication number 20110157967
- Publication date Jun 30, 2011
- NEC Corporation
- Tetsuhiro Suzuki
- G11 - INFORMATION STORAGE
Information Patent Application
DOMAIN WALL MOTION ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20110129691
- Publication date Jun 2, 2011
- Nobuyuki Ishiwata
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND INITIALIZING METHOD FOR THE SAME
- Publication number 20110116306
- Publication date May 19, 2011
- NEC Corporation
- Tetsuhiro Suzuki
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20110002163
- Publication date Jan 6, 2011
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND INITIALIZING METHOD FOR THE SAME
- Publication number 20100315854
- Publication date Dec 16, 2010
- Tetsuhiro Suzuki
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20100309712
- Publication date Dec 9, 2010
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20100309713
- Publication date Dec 9, 2010
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGETIC RANDOM ACCESS MEMORY
- Publication number 20100254183
- Publication date Oct 7, 2010
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT, AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20100237449
- Publication date Sep 23, 2010
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY, WRITE METHOD THEREFOR, AND MAGNETORE...
- Publication number 20100214826
- Publication date Aug 26, 2010
- NEC Corporation
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DOMAIN WALL RANDOM ACCESS MEMORY
- Publication number 20100193890
- Publication date Aug 5, 2010
- Tetsuhiro Suzuki
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100193889
- Publication date Aug 5, 2010
- Kiyokazu Nagahara
- G11 - INFORMATION STORAGE
Information Patent Application
Magneto-resistance effect element, magneto-resistance effect head,...
- Publication number 20070047158
- Publication date Mar 1, 2007
- Kazuhiko Hayashi
- G01 - MEASURING TESTING
Information Patent Application
Magneto-resistance effect element, magneto-resistance effect head,...
- Publication number 20060274456
- Publication date Dec 7, 2006
- Kazuhiko Hayashi
- G01 - MEASURING TESTING
Information Patent Application
Magneto-resistance effect element, magneto-resistance effect head,...
- Publication number 20060268466
- Publication date Nov 30, 2006
- Kazuhiko Hayashi
- G01 - MEASURING TESTING
Information Patent Application
Magneto-resistance effect element, magneto-resistance effect head,...
- Publication number 20060232894
- Publication date Oct 19, 2006
- Kazuhiko Hayashi
- G01 - MEASURING TESTING

Kiyokazu Nagahara

Person

Patents Grantslast 30 patents

Magnetic memory element and magnetic memory

Magnetic memory element, magnetic memory and manufacturing method o...

Magnetic memory including memory cells incorporating data recording...

Magnetic memory device and magnetic memory

Magnetic memory and method of manufacturing the same

Magnetic memory element and magnetic random access memory

Magnetic random access memory and initializing method for the same

Magnetic memory element, magnetic memory and initializing method

Method of initializing magnetic memory element

Magnetic memory device and magnetic random access memory

Magnetoresistance element, MRAM, and initialization method for magn...

Magnetic memory element and magnetic memory

Non-volatile logic circuit

Magnetic memory and manufacturing method thereof

Domain wall motion element and magnetic random access memory

Magnetic random access memory, method of initializing magnetic rand...

Magnetic random access memory, write method therefor, and magnetore...

Magnetic random access memory and initializing method for the same

Magnetoresistive element, and magnetic random access memory

Magnetic random access memory

Magnetoresistance effect element and magnetic random access memory

Magnetic random access memory

Semiconductor device

Magnetic random access memory and method of manufacturing the same

Magnetic domain wall random access memory

Magneto-resistance effect element and magneto-resistance effect head

Magneto-resistance effect element, magneto-resistance effect head,...

Magneto-resistance effect element, magneto-resistance effect head,...

Magneto-resistance effect element, magneto-resistance effect head,...

Magneto-resistance effect element, magneto-resistance effect head,...

Patents Applicationslast 30 patents

MAGNETIC MEMORY INCLUDING MEMORY CELLS INCORPORATING DATA RECORDING...

MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY

MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY AND MANUFACTURING METHOD O...

MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY AND INITIALIZING METHOD

MAGNETIC MEMORY AND MANUFACTURING METHOD THEREOF

MAGNETIC MEMORY INCLUDING MEMORY CELLS INCORPORATING DATA RECORDING...

MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY

MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY

NON-VOLATILE LOGIC CIRCUIT

MAGNETIC MEMORY ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC MEMORY DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

METHOD OF INITIALIZING MAGNETIC MEMORY ELEMENT

MAGNETORESISTANCE ELEMENT, MRAM, AND INITIALIZATION METHOD FOR MAGN...

MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME

MAGNETIC RANDOM ACCESS MEMORY, METHOD OF INITIALIZING MAGNETIC RAND...

DOMAIN WALL MOTION ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC RANDOM ACCESS MEMORY AND INITIALIZING METHOD FOR THE SAME

SEMICONDUCTOR DEVICE

MAGNETIC RANDOM ACCESS MEMORY AND INITIALIZING METHOD FOR THE SAME

MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC RANDOM ACCESS MEMORY

MAGNETORESISTANCE EFFECT ELEMENT AND MAGETIC RANDOM ACCESS MEMORY

MAGNETORESISTIVE ELEMENT, AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC RANDOM ACCESS MEMORY, WRITE METHOD THEREFOR, AND MAGNETORE...

MAGNETIC DOMAIN WALL RANDOM ACCESS MEMORY

MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME

Magneto-resistance effect element, magneto-resistance effect head,...

Magneto-resistance effect element, magneto-resistance effect head,...

Magneto-resistance effect element, magneto-resistance effect head,...

Magneto-resistance effect element, magneto-resistance effect head,...