Kiyoshi Miyasaka

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory device capable of multidirection data access
- Patent number 5,463,582
- Issue date Oct 31, 1995
- Fujitsu Limited
- Kazuya Kobayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device capable of multidirection data access
- Patent number 5,379,264
- Issue date Jan 3, 1995
- Fujitsu Limited
- Kazuya Kobayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Modular semiconductor device
- Patent number 4,689,658
- Issue date Aug 25, 1987
- Fujitsu Limited
- Hidehiko Akasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device with a high tolerance again...
- Patent number 4,503,448
- Issue date Mar 5, 1985
- Fujitsu Limited
- Kiyoshi Miyasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,481,526
- Issue date Nov 6, 1984
- Fujitsu Limited
- Kiyoshi Miyasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM with interleaved folded bit lines
- Patent number 4,476,547
- Issue date Oct 9, 1984
- Fujitsu Limited
- Kiyoshi Miyasaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor substrate bias circuit
- Patent number 4,430,581
- Issue date Feb 7, 1984
- Fujitsu Limited
- Jun-ichi Mogi
- G05 - CONTROLLING REGULATING
Information Patent Grant
Semiconductor memory device with decoder for chip selection/write in
- Patent number 4,392,212
- Issue date Jul 5, 1983
- Fujitsu Limited
- Kiyoshi Miyasaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 4,354,256
- Issue date Oct 12, 1982
- Fujitsu Limited
- Kiyoshi Miyasaka
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Address buffer circuit
- Patent number 4,342,103
- Issue date Jul 27, 1982
- Fujitsu Limited
- Mitsuo Higuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
MOS Random access memory with buried storage capacitor
- Patent number 4,329,704
- Issue date May 11, 1982
- Fujitsu Limited
- Junji Sakurai
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 4,314,360
- Issue date Feb 2, 1982
- Mitsuo Higuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 4,291,326
- Issue date Sep 22, 1981
- Fujitsu Limited
- Mitsuo Higuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having cross wires
- Patent number 4,278,989
- Issue date Jul 14, 1981
- Fujitsu Limited
- Fumio Baba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory circuit
- Patent number 4,262,341
- Issue date Apr 14, 1981
- Fujitsu Limited
- Jun-ichi Mogi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices having VMOS transistors and VMOS dynamic memo...
- Patent number 4,250,519
- Issue date Feb 10, 1981
- Fujitsu Limited
- Junichi Mogi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGFET structure with an extended gate electrode end
- Patent number 4,224,633
- Issue date Sep 23, 1980
- Fujitsu Limited
- Jun-ichi Mogi
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated semiconductor memory device
- Patent number 4,156,939
- Issue date May 29, 1979
- Fujitsu Limited
- Yoshihiro Takemae
- G11 - INFORMATION STORAGE

Kiyoshi Miyasaka

Person

Patents Grantslast 30 patents

Semiconductor memory device capable of multidirection data access

Semiconductor memory device capable of multidirection data access

Modular semiconductor device

Semiconductor integrated circuit device with a high tolerance again...

Semiconductor device

DRAM with interleaved folded bit lines

Semiconductor substrate bias circuit

Semiconductor memory device with decoder for chip selection/write in

Semiconductor memory device

Address buffer circuit

MOS Random access memory with buried storage capacitor

Semiconductor memory device

Semiconductor device

Semiconductor device having cross wires

Memory circuit

Semiconductor devices having VMOS transistors and VMOS dynamic memo...

IGFET structure with an extended gate electrode end

Integrated semiconductor memory device