Kiyotoshi Nakagawa

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Patents Grantslast 30 patents

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High voltage MOS transistor
- Patent number 4,947,232
- Issue date Aug 7, 1990
- Sharp Kabushiki Kaisha
- Tsutomu Ashida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage MOS field effect semiconductor device
- Patent number 4,926,243
- Issue date May 15, 1990
- Sharp Kabushiki Kaisha
- Kiyotoshi Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage MOS transistor
- Patent number 4,766,474
- Issue date Aug 23, 1988
- Sharp Kabushiki Kiasha
- Kiyotoshi Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage MOS transistor
- Patent number 4,757,362
- Issue date Jul 12, 1988
- Sharp Kabushiki Kaisha
- Tetuo Biwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Improved high voltage MOS transistor with field plate layers for pr...
- Patent number 4,614,959
- Issue date Sep 30, 1986
- Sharp Kabushiki Kaisha
- Kiyotoshi Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS